电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MHW5222A

产品类别射频和微波   
文件大小57KB,共4页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
器件替换:MHW5222A替换放大器
下载文档 详细参数 全文预览

MHW5222A规格参数

参数名称属性值
厂商名称NXP(恩智浦)
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
特性阻抗75 Ω
构造MODULE
增益22 dB
最大输入功率 (CW)21.25 dBm
最大工作频率450 MHz
最小工作频率40 MHz
最高工作温度100 °C
最低工作温度-20 °C
射频/微波设备类型WIDE BAND HIGH POWER
Base Number Matches1

文档预览

下载PDF文档
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MHW5222A/D
The RF Line
450 MHz CATV Amplifier
. . . designed for broadband applications requiring low distortion characteristics.
Specifically intended for CATV market requirements. Features ion–implanted
arsenic emitter transistors with 7.0 GHz f
T,
and an all gold metallization system.
Broadband Power Gain
@ f = 40–450 MHz
G
p
= 22 dB (Typ)
Broadband Noise Figure
@ f = 40–450 MHz
NF = 4.5 dB (Typ)
Superior Gain, Return Loss and DC Current Stability with Temperature
All Gold Metallization
MHW5222A
22 dB GAIN
450 MHz
60–CHANNEL
CATV TRUNK AMPLIFIER
ARCHIVE INFORMATION
ABSOLUTE MAXIMUM RATINGS
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
Value
+70
+28
–20 to +100
–40 to +100
Unit
dBmV
Vdc
°C
°C
CASE 714Y–03, STYLE 1
ELECTRICAL CHARACTERISTICS
(V
CC
= 24 Vdc, T
C
= +30°C, 75
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain — 50 MHz
Power Gain — 450 MHz
Slope
Gain Flatness (Peak To Valley)
Return Loss — Input/Output
(Z
o
= 75 Ohms)
Second Order Intermodulation Distortion
(V
out
= +46 dBmV, Ch 2, M6, M15)
(V
out
= +44 dBmV, Ch 2, M13, M22)
Cross Modulation Distortion
(V
out
= +46 dBmV)
Composite Triple Beat
(V
out
= +46 dBmV)
DIN (European Applications Only)
300 MHz — (CH V + Q – P @ W)
400 MHz — (CH M8 + M15 – M9 @ M14)
450 MHz — (CH M20 + M23 – M22 @ M21)
Noise Figure
(f = 450 MHz)
DC Current
53–Channel FLAT
60–Channel FLAT
53–Channel FLAT
60–Channel FLAT
40–450 MHz
Symbol
BW
G
p
G
p
S
IRL/ORL
IMD
XMD
53
XMD
60
CTB
53
CTB
60
DIN1
DIN2
DIN3
NF
I
DC
–80
–78
–60
–60
–63
–61
125.5
125
124
4.5
210
–72
–59
–60
5.0
240
dB
mA
dB
dB
dBµV
Min
40
21.4
22.0
0.2
18
Typ
22
22.9
0.5
0.2
Max
450
22.6
23.5
1.5
0.4
Unit
MHz
dB
dB
dB
dB
dB
dB
REV 1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
MHW5222A
1
ARCHIVE INFORMATION
7.0 GHz Ion–Implanted Transistors

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 517  1420  731  1584  619  14  27  22  50  23 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved