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o e n oe p ae it w . e c o
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e
s
o ec
MJ14001 (PNP),
MJ14002* (NPN),
MJ14003* (PNP)
*Preferred Devices
High−Current Complementary
Silicon Power Transistors
Designed for use in high−power amplifier and switching circuit
applications.
Features
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•
High Current Capability − I
C
Continuous = 60 Amperes
•
DC Current Gain − h
FE
= 15−100 @ I
C
= 50 Adc
•
Low Collector−Emitter Saturation Voltage −V
CE(sat)
= 2.5 Vdc (Max)
@ I
C
= 50 Adc
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current − Continuous
Emitter Current − Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
MJ14001
MJ14002/03
MJ14001
MJ14002/03
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
I
E
P
D
T
J
, T
stg
Value
60
80
60
80
5.0
60
15
75
300
1.71
−65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
°C
60 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 300 WATTS
MARKING
DIAGRAM
MJ1400xG
AYYWW
MEX
TO−204 (TO−3)
CASE 197A
STYLE 1
MJ1400x = Device Code
xx = 1, 2, or 3
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
360
PD, POWER DISSIPATION (WATTS)
330
270
210
150
90
ORDERING INFORMATION
Device
MJ14001
MJ14001G
MJ14002
MJ14002G
MJ14003
Package
TO−3
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
Shipping
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
30
0
MJ14003G
0
40
80
120
160
T
C
, CASE TEMPERATURE (°C)
200
240
Figure 1. Power Derating
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 6
Publication Order Number:
MJ14001/D
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
IC, COLLECTOR CURRENT (AMP)
Î Î Î
Î
Î Î Î Î
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ÎÎÎ Î Î Î
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Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î Î Î
ÎÎÎ
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎ Î Î Î
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
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ÎÎÎ Î Î Î
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
Max
Unit
Thermal Resistance, Junction−to−Case
0.584
_C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 200 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 40 Vdc, I
B
= 0)
V
CEO(sus)
Vdc
MJ14001
MJ14002, MJ14003
MJ14001
MJ14402, MJ14003
60
80
−
−
−
−
−
−
−
−
−
I
CEO
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 V)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 V)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
I
CEX
mA
MJ14001
MJ14002, MJ14003
I
CBO
mA
MJ14001
MJ14002, MJ14003
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
mA
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 25 Adc, V
CE
= 3.0 V)
(I
C
= 50 Adc, V
CE
= 3.0 V)
(I
C
= 60 Adc, V
CE
= 3.0 V)
h
FE
−
30
15
5.0
−
−
−
−
−
−
−
100
−
1.0
2.5
3.0
2.0
3.0
4.0
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 25 Adc, I
B
= 2.5 Adc)
(I
C
= 50 Adc, I
B
= 5.0 Adc)
(I
C
= 60 Adc, I
B
= 12 Adc)
Base−Emitter Saturation Voltage (Note 1)
(I
C
= 25 Adc, I
B
= 2.5 Adc)
(I
C
= 50 Adc, I
B
= 5.0 Adc)
(I
C
= 60 Adc, I
B
= 12 Adc)
V
CE(sat)
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
−
2000
pF
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
100
70
50
30
20
5.0 ms
dc
T
C
= 25°C
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
1.0
ms
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
MJ14001
MJ14002, MJ14003
2.0 3.0
5.0 7.0 10
20 30
50 70
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
200_C. T
J(pk)
may be calculated from the data in
Figure 13. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
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2
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
MJ14002 (NPN)
300
200
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
3.0
0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (AMPS)
50
70
V
CE
= 3.0 V
T
J
= −55°C
T
J
= 25°C
T
J
= 150°C
300
200
100
70
50
30
20
10
7.0
5.0
3.0
0.7 1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (AMPS)
30
50
70
V
CE
= 3.0 V
T
J
= −55°C
T
J
= 25°C
T
J
= 150°C
MJ14001, MJ14003 (PNP)
Figure 3. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.8
2.4
2.0
1.6
I
C
= 25 A
1.2
0.8
0.4
0
0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
I
C
= 10 A
T
J
= 25°C
2.8
2.4
2.0
1.6
Figure 4. DC Current Gain
I
C
= 60 A
T
J
= 25°C
I
C
= 60 A
I
C
= 25 A
1.2
0.8
0.4
0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
B
, BASE CURRENT (AMPS)
5.0 7.0
10
I
C
= 10 A
I
B
, BASE CURRENT (AMPS)
Figure 5. Collector Saturation Region
2.8
2.4
V, VOLTAGE (VOLTS)
2.0
1.6
1.2
0.8
0.4
0
0.7
1.0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 3.0 V
V
CE(sat)
@ I
C
/I
B
= 10
2.0
5.0 7.0 10
20 30
3.0
I
C
, COLLECTOR CURRENT (AMPS)
50
70
0.4
0
0.7
1.0
T
J
= 25°C
V, VOLTAGE (VOLTS)
2.8
2.4
2.0
1.6
1.2
0.8
Figure 6. Collector Saturation Region
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 3.0 V
V
CE(sat)
@ I
C
/I
B
= 10
2.0 3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (AMPS)
50
70
Figure 7. “On” Voltages
Figure 8. “On” Voltages
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3
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
1.0
0.7
0.5
0.3
t, TIME (
μ
s)
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.7 1.0
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
2.0 3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (AMPS)
50
70
t
d
t
r
t, TIME (
μ
s)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.04
0.7 1.0
t
f
4.0
3.0
2.0
t
s
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
2.0 3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (AMPS)
50
70
Figure 9. Turn−On Switching Times
Figure 10. Turn−Off Switching Times
V
CC
+2.0 V
0
10000
7000
5000
C, CAPACITANCE (pF)
3000
2000
1000
700
500
300
200
100
1.0
C
ib
C
ob
T
J
= 25°C
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
2.0
3.0
5.0 7.0 10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
50
70 100
C
ib
C
ob
0
−12 V
t
r
≤
20 ns
−12 V
R
L
R
B
−30 V
TO SCOPE
t
r
≤
20 ns
10 to 100
ms
DUTY CYCLE
≈
2.0%
+10
V
V
CC
R
L
−30 V
R
B
TO SCOPE
t
r
≤
20 ns
t
r
≤
20 ns
10 to 100
ms
V
BB
DUTY CYCLE
≈
2.0%
+7.0 V
FOR CURVES OF FIGURES 3 & 6, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
Figure 11. Capacitance Variation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 12. Switching Test Circuit
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.05
0.07
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
t, TIME (ms)
20 30
50 70 100
200 300
500 700 1000 2000
R
qJC(t)
= r(t) R
qJC
R
qJC
= 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.02 0.03
Figure 13. Thermal Response
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