MJE5740G, MJE5742G
NPN Silicon Power
Darlington Transistors
The MJE5740G and MJE5742G Darlington transistors are designed
for high−voltage power switching in inductive circuits.
Features
http://onsemi.com
•
These Devices are Pb−Free and are RoHS Compliant*
Applications
•
•
•
•
•
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300−400 VOLTS
80 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE5740
MJE5742
MJE5740
MJE5742
Symbol
V
CEO(sus)
Value
300
400
600
800
8
8
16
2.5
5
2
0.016
100
0.8
−65
to +150
Unit
Vdc
≈
100
Vdc
COLLECTOR 2,4
Vdc
Adc
Adc
W
W/_C
W
W/_C
_C
MJE574xG
TO−220AB
CASE 221A−09
STYLE 1
3
MJE574x =
G
A
Y
WW
=
=
=
=
Device Code
x = 0 or 2
Pb−Free Package
Assembly Location
Year
Work Week
AY WW
BASE
1
≈
50
Collector−Emitter Voltage
V
CEV
Emitter−Base Voltage
Collector Current
Base Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
V
EB
I
C
I
CM
I
B
I
BM
P
D
P
D
T
J
, T
stg
EMITTER 3
Total Device Dissipation @ T
A
= 25_C
Derate above 25°C
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.25
62.5
275
Unit
_C/W
_C/W
_C
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
−
Rev. 11
1
Publication Order Number:
MJE5740/D
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2. Pulse Test: Pulse Width 300
ms,
Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (V
f
) of this diode is comparable to that of typical fast recovery rectifiers.
SWITCHING CHARACTERISTICS
ON CHARACTERISTICS
(Note 2)
SECOND BREAKDOWN
OFF CHARACTERISTICS
(Note 2)
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
MJE5742G
MJE5740G
Collector−Emitter Saturation Voltage (I
C
= 4 Adc, I
B
= 0.2 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.4 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 0.2 Adc, T
C
= 100_C)
Base−Emitter Saturation Voltage (I
C
= 4 Adc, I
B
= 0.2 Adc)
Base−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.4 Adc)
Base−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 0.2 Adc, T
C
= 100_C)
Crossover Time
Voltage Storage Time
Inductive Load, Clamped
(Table 1)
Fall Time
Storage Time
Rise Time
Delay Time
Typical Resistive Load
(Table 1)
Diode Forward Voltage (Note 3) (I
F
= 5 Adc)
DC Current Gain (I
C
= 0.5 Adc, V
CE
= 5 Vdc)
(I
C
= 4 Adc, V
CE
= 5 Vdc)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter Cutoff Current (V
EB
= 8 Vdc, I
C
= 0)
Collector Cutoff Current (V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, T
C
= 100_C)
Collector−Emitter Sustaining Voltage
(I
C
= 50 mA, I
B
= 0)
Device
(V
CC
= 250 Vdc, I
C(pk)
= 6 A
I
B1
= I
B2
= 0.25 A, t
p
= 25
ms,
Duty Cycle
v
1%)
(I
C(pk)
= 6 A, V
CE(pk)
= 250 Vdc
I
B1
= 0.06 A, V
BE(off)
= 5 Vdc)
Characteristic
MJE5740G, MJE5742G
http://onsemi.com
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Package
MJE5740
MJE5742
V
CEO(sus)
Symbol
RBSOA
V
CE(sat)
V
BE(sat)
I
EBO
I
CEV
h
FE
I
S/b
t
sv
V
f
t
d
t
c
t
s
t
r
t
f
Min
50
200
300
400
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50 Units / Rail
0.04
Typ
100
400
0.5
2
4
2
8
−
−
−
−
−
−
−
−
−
−
−
−
See Figure 7
See Figure 6
Shipping
Max
2.5
2.5
3.5
2.4
2
3
2.2
75
−
−
−
−
−
−
−
−
1
5
−
−
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
ms
ms
ms
ms
ms
ms
−
2
MJE5740G, MJE5742G
TYPICAL CHARACTERISTICS
100
POWER DERATING FACTOR (%)
SECOND BREAKDOWN DERATING
I
C
60
THERMAL DERATING
40
V
CE
I
B
20
90% I
B1
t
sv
I
C(pk)
90% V
CE(pk)
t
rv
t
c
10% V
CE(pk)
V
CE(pk)
90% I
C
t
fi
t
ti
80
10%
I
C(pk)
2% I
C
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
TIME
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2000
VBE, BASE-EMITTER VOLTAGE (VOLTS)
1000
hFE , DC CURRENT GAIN
V
CE
= 5 V
150°C
+ 25°C
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0.5
1
2
5
I
C
, COLLECTOR CURRENT (AMPS)
10
+150°C
+ 25°C
- 55°C
h
FE
= 20
- 55°C
100
10
0.1
2
1
I
C
, COLLECTOR CURRENT (AMPS)
5
10
Figure 3. DC Current Gain
Figure 4. Base−Emitter Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0.1
0.2
0.5
1
2
5
I
C
, COLLECTOR CURRENT (AMPS)
10
+ 25°C
+150°C
- 55°C
h
FE
= 20
Figure 5. Collector−Emitter Saturation Voltage
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3
MJE5740G, MJE5742G
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
+5 V
1N493
3
TEST CIRCUITS
0.001
mF
P
W
DUTY CYCLE
≤
10%
t
r
, t
f
≤
10 ns
68
33 1N493
3
2N222
2
33
MJE21
0
V
CC
+V
CC
L
MR826
*
V
clamp
*SELECTED FOR
≥
1 kV
V
CE
D
1
-4 V
R
B
R
C
TUT
SCOPE
1
k
R
B
I
B
I
C
5.1
k
51
T.U.T.
1
+ 5 Vk
1
k 2N2905
47
1/2
W
100
NOTE:
PW and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
1N493
3
270
0.02
mF
MJE20
0
- V
BE(off)
V
CC
= 30 V
V
CE(pk)
= 250 Vdc
I
C(pk)
= 6 A
CIRCUIT
VALUES
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200
mH/20
A
L
coil
= 200
mH
OUTPUT WAVEFORMS
V
CC
= 250 V
D1 = 1N5820 OR EQUIV.
+10 V
TEST WAVEFORMS
I
C
I
C(pk)
t
1
V
CE
V
CE
OR
V
clamp
TIM
E
t
2
t
f
25
ms
t
f
CLAMPED
t
t
1
ADJUSTED TO
OBTAIN I
C
t
1
≈
t
2
≈
L
coil
(I
C
pk
)
V
CC
L
coil
(I
C
pk
)
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
0
- 9.2 V
t
r
, t
f
< 10 ns
DUTY CYCLE = 1%
R
B
AND R
C
ADJUSTED
FOR DESIRED I
B
AND I
C
t
V
clamp
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4
MJE5740G, MJE5742G
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
REVERSE BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
≥
25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
16
100
ms
10
ms
5 ms
IC, COLLECTOR CURRENT (AMPS)
14
12
10
8
6
4
2
0
5
100
10
20
50
200
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
0
100
200
300
400
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
V
BE(off)
≤
5 V
T
J
= 100°C
MJE5742
MJE5740
IC, COLLECTOR CURRENT (AMPS)
16
10
8
3
1
0.5
0.3
BONDING WIRE LIMIT
1 ms
dc
THERMAL LIMIT
(SINGLE PULSE)
0.1
SECOND BREAKDOWN LIMIT
MJE5742
0.05 CURVES APPLY BELOW RATED V
CEO
MJE5740
0.02
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10
1
0.7
0.5
t, TIME (
μ
s)
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.2
t
r
7
5
t, TIME (
μ
s)
3
2
1
0.7
0.5
0.3
0.2
0.2 0.3
t
f
V
CC
= 250 V
I
B1
= I
B2
I
C
/I
B
= 20
t
s
t
d
V
CC
= 250 V
I
B1
= I
B2
I
C
/I
B
= 20
0.3
0.5 0.7
1
2
3
5
7
10
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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