MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
MJE8503A*
*Motorola Preferred Device
SWITCHMODE
™
Series
NPN Bipolar Power Transistor
The MJE8503A transistor is designed for high voltage, high speed, power switching
in inductive circuits where fall time is critical. They are suited for line operated
switchmode applications such as:
•
Switching Regulators
•
Inverters
•
Solenoid and Relay Drivers
•
Motor Controls
•
Deflection Circuits
Featuring
•
1500 Volt Collector-Base Breakdown Capability
•
Fast Switching:
180 ns Typical Fall Times
450 ns Typical Crossover Times
1.2
µs
Typical Storage Times
•
Low Collector-Emitter Leakage Current — 100
µA
Max @ 1500 VCES
POWER TRANSISTORS
5.0 AMPERES
1500 VOLTS — BVCES
80 WATTS
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Collector Current
— Peak (1)
Collector Current — Continuous
Collector Current
— Peak
Total Power Dissipation @ TC = 25°C
@ TC = 100°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
VCEO(sus)
VCES
VCBO
VEBO
IC
IB
IBM
PD
Value
700
1500
1500
5.0
5.0
10
4.0
4.0
80
21
0.8
– 65 to +125
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes
1/8″ from Case for 5 sec.
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
<
10%.
Symbol
R
θJC
TL
Max
1.25
275
Unit
°C/W
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
3–650
Motorola Bipolar Power Transistor Device Data
MJE8503A
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 1500 Vdc, VBE = 0, TC = 25°C)
(VCE = 1500 Vdc, VBE = 0, TC = 125°C)
Collector Cutoff Current
(VCE = 1500 Vdc, RBE = 50 Ohms, TC = 100°C)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 4.5 Adc, VCE = 5.0 Vdc)
Base-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 1.0 Vdc)
(IC = 4.5 Adc, IB = 2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 1.0 Vdc)
(IC = 4.5 Adc, IB = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 0.1 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load (Table 1)
Storage Time
Crossover Time
Fall Time
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2%
(IC = 2 5 Ad IB = 1.0 Adc, Vclamp = 500 Vd
2.5 Adc,
1 0 Ad
Vdc
VBE(off) = 5.0 Vdc, tp = 50
µs)
tsv
tc
tfi
—
—
—
1.2
0.45
0.18
—
—
—
µs
(IC = 2.5 Adc, IB = 1.0 Adc, VCC = 500 Vdc
(
VBE(off) = 5.0 Vdc, tp = 50
µs)
td
tr
ts
tf
—
—
—
—
0.06
0.08
1.2
0.7
0.2
2.0
4.0
2.0
µs
fT
Cob
—
—
7.0
125
—
—
MHz
pF
hFE
7.5
2.25
VBE(sat)
—
—
VCE(sat)
—
—
—
—
2.0
3.0
—
—
1.5
1.5
Vdc
—
—
—
—
Vdc
—
IS/b
See Figure 2
VCEO(sus)
ICES
—
—
ICER
IEBO
—
—
—
—
—
—
0.1
2.0
5.0
1.0
mAdc
mAdc
700
—
—
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
Motorola Bipolar Power Transistor Device Data
3–651
MJE8503A
100
IC, COLLECTOR CURRENT (AMPS)
VCE = 1 V
hFE , DC CURRENT GAIN
TJ = 25°C
10
50
µs
1 ms
1
50 ms
0.1
10
0.01
1
0.01
0.1
1
10
0.001
1
10
100
1000
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 1. DC Current Gain
Figure 2. Forward Bias Safe Operating
Area (FBSOA)
3–652
Motorola Bipolar Power Transistor Device Data
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Table 1. Plastic (Isolated TO–220 Type)
Device Type
ICCont
Amps
Max
1
2
VCEO(sus)
Volts
Min
250
400
700
1000
3
5
100
100
400
450
700
1000
1000
550
6
400
450
8
80
150
400
700
1200
700
1000
VCES
Volts
Min
hFE
Min/Max
30/150
14/34
14/34
@ IC
Amp
0.3
0.2
0.2
1
3
0.3
.005
0.3
0.5
0.5
0.5
2
3
5
1
1
4
4
3
1.5
8
Resistive Switching
ts
µs
Max
2 typ
2.75(3)
2.75(3)
0.6
1.5 typ
1.7(3)
4
1.7(3)
2.75(3)
2.5(3)
3.2(3)
0.5 typ
1 typ
3
2.5(3)
2.75(3)
—
0.5 typ
1.5 typ
2.75(3)
3
tf
µs
Max
0.17 typ
0.2(3)
0.175(3)
0.3
1.5 typ
0.15(3)
0.8
0.15(3)
0.2(3)
0.15(3)
0.15(3)
0.13 typ
0.15 typ
0.7
0.18(3)
0.18(3)
—
0.14 typ
1.5 typ
0.2(3)
0.7
3
8
@ IC
Amp
0.3
1
1
1
3
1
2.5
1
2
3
3
2
3
5
2
2
—
5
13 typ
12
14 typ
14 typ
4
30
4
14 typ
13 typ
2
40
20(1)
12
8
fT
MHz
Min
10
13 typ
13 typ
3
4(1)
12 typ
PD (Case)
Watts
@ 25°C
28
25
25
28
28
35
40
35
35
40
40
35
35
40
45
45
40
35
40
50
40
NPN
PNP
MJF47
BUL44F
MJF18002
MJF31C
MJF122
(2)
BUL45F
BUT11AF
MJF18004
MJF18204
BUL146F
MJF18006
MJF6107
MJF15030
MJF13007
BUL147F
MJF15031
MJF32C
MJF127
(2)
10 min
2000 min
14/34
10 min
14/34
18/35
14/34
14/34
30/90
40 min
5/30
14/34
16/34
450
10
60
80
100
450
12
400
1000
MJF18008
MJF3055
MJF44H11
MJF6388
(2)
MJF2955
MJF45H11
MJF6668
(2)
20/100
40/100
3k/20k
14/34
6/30
1000
700
MJF18009
MJF13009
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
4
Table 2. Plastic TO–220AB
Device Type
ICCont
Amps
Max
0.5
VCEO(sus)
Volts
Min(8)
350
hFE
Min/Max
15 min
40 min
TIP30C
15/75
30/150
MJE5730
30/150
30/150
30/150
500 min
14/36
30
14/34
3 min
BD242B
BD242C
25 min
25 min
25 min
50/200
@ IC
Amp
0.1
0.1
1
0.3
0.3
0.3
0.3
2
0.4
0.1
0.2
1
1
1
1
0.5
0.6 typ
0.6 typ
2 typ
2 typ
2 typ
2 typ
1.7 typ
2.75(3)
3.5
3(3)
4 typ
ts
µs
Max
1
2
3
CASE 221A–06
(TO–220AB)
PD
(Case)
Watts
@ 25°C
30
30
30
40
40
40
40
50
50
50
40
80
3
3
40
40
40
40
Resistive Switching
tf
µs
Max
@ IC
Amp
fT
MHz
Min
10 typ
10 typ
0.3 typ
0.18 typ
0.18 typ
0.18 typ
0.18 typ
1.3 typ
0.175(3)
1.4
0.17(3)
0.8 typ
1
0.3
0.3
0.3
0.3
2
1
1
1
1
3
10
10
10
10
25(1)
13 typ
4
12 typ
NPN
MJE2360T
PNP
MJE2361T
1
100
250
300
350
400
2
100
400/700
450/1000
450/1000
900/1800
3
80
100
TIP29C
TIP47
TIP48
TIP49
TIP50
TIP112
(2)
BUL44
BUX85
MJE18002
MJE1320
BD241B
BD241C
MJE5731
MJE5731A
(7)
TIP117
(2)
TIP31C
150
TIP32C
MJE9780
0.3 typ
1
3
5 typ
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)V
CEO = 375 V
(8)When 2 voltages are given, the format is V
CEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide
2–4
Motorola Bipolar Power Transistor Device Data
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