Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | Advanced Semiconductor, Inc. |
| 零件包装代码 | SIP |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 最大集电极电流 (IC) | 4 A |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 750 |
| JEDEC-95代码 | TO-126 |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 40 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 1 MHz |
| Base Number Matches | 1 |
| MJE803 | MJE800 | |
|---|---|---|
| 描述 | Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN |
| 厂商名称 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
| 零件包装代码 | SIP | SIP |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| 最大集电极电流 (IC) | 4 A | 4 A |
| 配置 | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 750 | 750 |
| JEDEC-95代码 | TO-126 | TO-126 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | NPN | NPN |
| 最大功率耗散 (Abs) | 40 W | 40 W |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON |
| 标称过渡频率 (fT) | 1 MHz | 1 MHz |
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