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MMBFJ309LT1,
MMBFJ310LT1
JFET − VHF/UHF Amplifier
Transistor
N−Channel
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Features
2 SOURCE
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Gate−Source Voltage
Gate Current
Symbol
V
DS
V
GS
I
G
Value
25
25
10
Unit
Vdc
Vdc
mAdc
3
Symbol
P
D
225
1.8
R
qJA
T
J
, T
stg
556
−55 to +150
mW
mW/°C
°C/W
°C
Max
Unit
1
2
3
GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
6x M
G
G
1
= Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
6x
ORDERING INFORMATION
Device
MMBFJ309LT1
MMBFJ309LT1G
MMBFJ310LT1
MMBFJ310LT1G
Package
SOT−23
Shipping
†
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
SOT−23
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MMBFJ309LT1/D
MMBFJ309LT1, MMBFJ310LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= −1.0
mAdc,
V
DS
= 0)
Gate Reverse Current (V
GS
= −15 Vdc)
Gate Reverse Current
(V
GS
= −15 Vdc, T
A
= 125°C)
Gate Source Cutoff Voltage
(V
DS
= 10 Vdc, I
D
= 1.0 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V
DS
= 10 Vdc, V
GS
= 0)
Gate−Source Forward Voltage
(I
G
= 1.0 mAdc, V
DS
= 0)
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
Output Admittance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
Input Capacitance
(V
GS
= −10 Vdc, V
DS
= 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
GS
= −10 Vdc, V
DS
= 0 Vdc, f = 1.0 MHz)
Equivalent Short−Circuit Input Noise Voltage
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
|Y
fs
|
|y
os
|
C
iss
C
rss
e
n
8.0
−
−
−
−
−
−
−
−
10
18
250
5.0
2.5
−
mmhos
mmhos
pF
pF
MMBFJ309
MMBFJ310
I
DSS
V
GS(f)
12
24
−
−
−
−
30
60
1.0
mAdc
Vdc
MMBFJ309
MMBFJ310
V
(BR)GSS
I
GSS
V
GS(off)
−25
−
−
−1.0
−2.0
−
−
−
−
−
−
−1.0
−1.0
−4.0
−6.5
Vdc
nAdc
mAdc
Vdc
Symbol
Min
Typ
Max
Unit
nV
Hz
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2
MMBFJ309LT1, MMBFJ310LT1
IDSS, SATURATION DRAIN CURRENT (mA)
70
60
I D , DRAIN CURRENT (mA)
V
DS
= 10 V
50
40
30
20
10
−5.0
I
DSS
+25
°C
+25
°C
40
+150°C
+25
°C
−55
°C
+150°C
−1.0
−4.0
−3.0
−2.0
I
D
− V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
I
DSS
− V
GS
, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
0
30
20
10
0
T
A
= −55°C
50
70
60
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
Yfs , FORWARD TRANSCONDUCTANCE
μ
mhos)
(
100 k
Y
fs
1.0 k
Yos, OUTPUT ADMITTANCE (
μ
mhos)
CAPACITANCE (pF)
10
R
DS
7.0
120
R DS , ON RESISTANCE (OHMS)
Y
fs
10 k
96
100
72
C
gs
4.0
48
1.0 k
Y
os
V
GS(off)
= −2.3 V =
V
GS(off)
= −5.7 V =
10
C
gd
1.0
0
10
24
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I
D
, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
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3
MMBFJ309LT1, MMBFJ310LT1
|S
21
|, |S
11
|
30
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25°C
3.0
0.85 0.45
S
22
2.4
Y12 (mmhos)
Y
11
0.79 0.39
S
21
1.8
0.73 0.33
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25°C
S
11
0.6
Y
12
0
100
200
300
500
f, FREQUENCY (MHz)
700
1000
0.55 0.15
100
0.61 0.21
S
12
200
300
500
f, FREQUENCY (MHz)
700
1000
0.90
0.012 0.92
0.036 0.96
0.048 0.98
|S
12
|, |S
22
|
0.060 1.00
|Y11|, |Y21 |, |Y22 | (mmhos)
24
18
12
Y
21
Y
22
1.2
0.67 0.27
0.024 0.94
6.0
Figure 4. Common−Gate Y Parameter
Magnitude versus Frequency
q
21
,
q
11
180° 50°
q
22
170°
40°
q
21
q
12
,
q
22
−2
0° 87°
−20
°
−40
°
−60
°
−80
°
−100
°
150°
20°
q
12
q
11
140°
10°
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25°C
700
−120
°
84°
−140
°
−160
°
83°
−180
°
−200
°
82°
1000
85°
86°
Figure 5. Common−Gate S Parameter
Magnitude versus Frequency
q
11
,
q
12
−20
°
120°
−40
°
100°
−60
°
80°
−80
°
60°
q
12
−100
°
40°
−120
°
20°
100
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25°C
200
300
500
f, FREQUENCY (MHz)
q
11
−80
°
−100
°
1000
q
21
q
21
q
21
,
q
22
q
11
q
22
0
−20
°
−40
°
−60
°
160°
30°
130°
0°
100
200
300
500
f, FREQUENCY (MHz)
700
Figure 6. Common−Gate Y Parameter
Phase−Angle versus Frequency
Figure 7. S Parameter Phase−Angle
versus Frequency
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4
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