eSemi-C
on
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
, U
nc,
MRF894
TELEPHONE: (973) 376-2922
(212) 227-6005
USA
NPN
DESCRIPTION:
SILICON RF POWER TRANSISTOR
PACKAGE STYLE .230 6L FLG
-
!
MRF894
is agold metalized
epitaxial silicon NPN transistor, using
diffused ballast resistors for high
linearity Calss-AB operation for cellular
base station application.
FEATURES:
• Internal Input Matching Network
• P
G
= 7.5 dB at 30 W/960 MHz
•
Omnigold™
Metalization System
• TIC = 55 % Typ.
• = Load mismatch capability 20:1
MAXIMUM RATINGS
Ic
7.5 A
040x45"
i
i
.115
V
.
.
r
A -
-B-
2X0
130
.
.
.
4X .025 R
/
.430! D
I
E
1
!
i
/
:
.
! ,.
125
-
-~
G
H
F
^
^
1
,
I
I
\
, , . . . . . .
1 L
J
1
K
!
f
DIM
A
B
C
D
E
F
G
H
1
J
K
L
MINIMUM
nches / mm
.355/9.02
MAXIMUM
inches / mm
1 1 5 / 2 92
075 /1.91
.225 / 5 , 7 2
.090
12
29
.720/ 18.29
970/2464
.355/9.02
.004/0.10
120/305
.160/4.06
.230/5.84
.365/9.27
.125/3.18
.085
12
16
VCBO
VCEO
VEBO
PDISS
Tj
48V
25V
,235/5.97
,110/2.79
3.5V
88 W @ T
c
= 25
°C
-65 °C to +200 °
C
-65 °C to +150°
C
2.0 °C/W
730 / 18.54
,980/24.89
3 6 5 / 9 27
.006/0.15
130/3.30
180/4,57
.260
/6.60
TSTG
9jc
CHARACTERISTICS T
c
= 25°c
SYMBOL
TEST CONDITIONS
BVceo
BVcER
MINIMUM TYPICAL MAXIMUM
48
30
25
3.5
10
15
55
40
28
5.0
—
40
42
7.5
—
—
—
—
—
100
50
..
.
UNITS
V
V
V
mA
..
.
PF
l
c
= 100 Ma
BVCEO
BV
EBO
ICBO
HFE
C
OB
PG
IMD
3
T!C
l
c
= 40mA
l
c
= 40 mA
I
E
= 10mA
V
CE
= 24 V
V
CE
= 20V
V
CB
= 25 V
VCE = 25 V
POUT = 30 W
R
BE
= 150Q
I
C
= 2.0A
f = 1 .0 MHz
ICQ = 60 mA
f, = 860.0 MHz
f = 860 MHz
f
2
= 860.1 MHz
9.0
-35
55
dB
dBc
%
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time
of mint
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
\ Semt-( onductors encourages customers to verity that datasheets are current before placing orders
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
