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MTDF1C02HD
Preferred Device
Power MOSFET
1 Amp, 20 Volts
Complementary Micro8t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
•
Miniature Micro8 Surface Mount Package – Saves Board Space
•
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
•
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
•
Logic Level Gate Drive – Can Be Driven by Logic ICs
•
Diode Is Characterized for Use In Bridge Circuits
•
Diode Exhibits High Speed, With Soft Recovery
•
IDSS Specified at Elevated Temperature
•
Avalanche Energy Specified
•
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Drain–to–Source Voltage
N–Channel
P–Channel
Drain–to–Gate Voltage (RGS = 1.0 MW)
N–Channel
P–Channel
Gate–to–Source Voltage – Continuous
N–Channel
P–Channel
Operating and Storage Temperature Range
Symbol
VDSS
20
20
VDGR
20
20
VGS
V
±8.0
±8.0
–55 to
150
°C
V
Max
Unit
V
WW
= Date Code
1
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1 AMPERE, 20 VOLTS
RDS(on) = 120 mW (N–Channel)
1 AMPERE, 20 VOLTS
RDS(on) = 175 mW (P–Channel)
D
7
8
P–Channel
D
5
6
N–Channel
G
2
G
1
S
4
3
S
MARKING
DIAGRAM
8
Micro8
CASE 846A
STYLE 2
WW
CA
PIN ASSIGNMENT
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Drain–1
Drain–1
Drain–2
Drain–2
TJ and
Tstg
Top View
ORDERING INFORMATION
Device
MTDF1C02HDR2
Package
Micro8
Shipping
4000 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 1
Publication Order Number:
MTDF1C02HD/D
MTDF1C02HD
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage – Continuous
1″ SQ.
FR–4 or G–10 PCB
Figure A below
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure B below
1 die operating
Steady State
1″ SQ.
FR–4 or G–10 PCB
Figure A below
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure B below
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure B below
2 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Polarity
N & P–Ch
N & P–Ch
N & P–Ch
N–Channel
Symbol
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
Typical
–
–
–
80
–
–
–
–
–
160
–
–
–
–
–
80
–
–
–
–
–
160
–
–
–
–
–
240
–
–
–
–
–
–
Max
20
20
±
8.0
100
1.25
10
2.8
2.3
23
200
0.63
5.0
1.7
1.6
16
100
1.25
10
2.3
1.9
19
200
0.63
5.0
1.6
1.3
13
300
0.42
3.33
1.3
1.1
11
– 55 to 150
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
N–Channel
P–Channel
P–Channel
N & P–Ch
Operating and Storage Temperature Range
1. Repetitive rating; pulse width limited by maximum junction temperature.
Figure A. 1, Square FR–4 or G–10 PCB
Figure B. Minimum FR–4 or G–10 PCB
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2
MTDF1C02HD
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Note 2.)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (Cpk
≥
2.0)
(VGS = 0 Vdc, ID = 250
µAdc)
Breakdown Temperature Coefficient
(Positive)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 16 Vdc)
(VGS = 0 Vdc, VDS = 20 Vdc)
Gate–Body Leakage Current (VGS =
±8.0
Vdc, VDS = 0)
ON CHARACTERISTICS
(Note 3.)
Gate Threshold Voltage
(Cpk
≥
2.0)
(VDS = VGS, ID = 250
µAdc)
Threshold Temperature Coefficient
(Negative)
((Notes 2. & 4.)
VGS(th)
(N)
(P)
(N)
(P)
RDS(on)
(N)
(P)
RDS(on)
(N)
(P)
gFS
(N)
(P)
2.0
1.3
–
–
–
–
–
–
0.133
0.220
0.16
0.28
mhos
–
–
0.100
0.146
0.120
0.175
Ohm
0.7
0.7
–
–
0.90
0.95
2.5
2.2
1.1
1.4
–
–
Ohm
Vdc
IDSS
(N)
(P)
IGSS
–
–
–
–
–
–
–
1.0
1.0
100
nAdc
(Notes 2. & 4.)
V(BR)DSS
(N)
(P)
(N)
(P)
20
20
–
–
–
–
5.0
14
–
–
–
–
µAdc
Vdc
Symbol
Polarity
Min
Typ
Max
Unit
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 1.6 Adc)
Drain–to–Source On–Resistance (Cpk
≥
2.0) (Notes 2. & 4.)
(VGS = 2.7 Vdc, ID = 0.85 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
Forward Transconductance (Note 2.)
(VDS = 10 Adc, ID = 0.85 Adc)
(VDS = 10 Adc, ID = 0.6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 10 Vdc, ID = 0.85 Adc,
VGS = 2.7 Vdc,
RG = 6.0
Ω)
(Note 2.)
(VDS = 10 Vdc, ID = 0.6 Adc,
VGS = 2.7 Vdc,
RG = 6.0
Ω)
(Note 2.)
(VDD = 10 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc,
RG = 6.0
Ω)
(Note 2.)
(VDD = 10 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc,
RG = 6.0
Ω)
(Note 2.)
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
)
Ciss
Coss
Crss
(N)
(P)
(N)
(P)
(N)
(P)
–
–
–
–
–
–
145
225
90
150
38
60
–
–
–
–
–
–
pF
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8.0
15
27
27
23
60
34
72
16
20
79
94
24
49
31
76
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
2. Negative signs for P–Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
3
MTDF1C02HD
ELECTRICAL CHARACTERISTICS – continued
(TA = 25°C unless otherwise noted) (Note 2.)
Characteristic
SWITCHING CHARACTERISTICS – continued
(Note 4.)
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = 16 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc) (Note 2.)
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc) (Note 2.)
QT
Q1
Q2
Q3
SOURCE–DRAIN DIODE CHARACTERISTICS
(TC = 25°C)
Forward Voltage (Note 3.)
(IS = 1.7 Adc, VGS = 0 Vdc)
(Note 2.)
(IS = 1.2 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
–
–
–
–
–
–
–
–
–
–
0.84
0.89
29
86
14
27
15
59
0.018
0.115
1.0
1.1
–
–
–
–
–
–
–
–
µC
Vdc
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
–
–
–
–
–
–
–
–
3.9
5.3
0.4
0.7
1.7
2.6
1.5
1.9
5.5
7.5
–
–
–
–
–
–
nC
Symbol
Polarity
Min
Typ
Max
Unit
Reverse Recovery Time
trr
ta
(IF = IS,
dIS/dt = 100 A/µs) (Note 2.)
tb
QRR
ns
Reverse Recovery Stored
Charge
2. Negative signs for P–Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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4
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