Datasheet> 器件分类 > 晶体管> ASI10620

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ASI10620: 产品描述RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,; 产品类别晶体管; 文件大小16KB，共1页; 制造商Advanced Semiconductor, Inc.

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ASI10620概述

RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

ASI10620规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
最大集电极电流 (IC)	0.25 A
基于收集器的最大容量	3.5 pF
集电极-发射极最大电压	28 V
配置	SINGLE
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	O-CRDB-F4
元件数量	1
端子数量	4
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	DISK BUTTON
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

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MLN1027SL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI MLN1027SL

is Designed for

PACKAGE STYLE .280 4L PILL

FEATURES:

•

Omnigold™

Metalization System

ØB

MAXIMUM RATINGS

CBO

CEO

EBO

DISS

STG

0.250 A

ØC

40 V

28 V

3.5 V

7.0 W @ T

= 25

-65

C to +200

-65 C to +150 C

C/W

DIM

.275 / 6.99

.004 / 0.10

.050 / 1.27

.118 / 3.00

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.230 / 5.84

1.055 / 26.80

.285 / 7.24

.006 / 0.15

.060 . 1.52

.130 / 3.30

ORDER CODE: ASI10620

CHARACTERISTICS

SYMBOL

CBO

CEO

EBO

CBO

= 25 C

NONETEST

CONDITIONS

= 1.0 mA

= 24 V

= 5.0 V

= 28 V

= 20 V

OUT

= 0.5 W

= 100 mA

f = 1.0 MHz

f = 1.0 GHz

MINIMUM TYPICAL MAXIMUM

3.5

0.5

120

3.5

9.0

UNITS

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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