Datasheet> 器件分类 > 晶体管> ASI10602

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ASI10602: 产品描述RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN,; 产品类别晶体管; 文件大小17KB，共1页; 制造商Advanced Semiconductor, Inc.

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ASI10602概述

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN,

ASI10602规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
最大集电极电流 (IC)	4 A
基于收集器的最大容量	50 pF
集电极-发射极最大电压	35 V
配置	SINGLE
最高频带	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-CRFM-F4
元件数量	1
端子数量	4
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	FLAT
端子位置	RADIAL
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
Base Number Matches	1

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HF15-28F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI HF15-28F

is Designed for

PACKAGE STYLE .380 4L FLG

.112 x 45°

FEATURES:

•

= 21 dB min. at 15 W/30 MHz

•

IMD

= -30 dBc max. at 15 W

(PEP)

•

Omnigold™

Metalization System

Ø.125 NOM.

FULL R

.125

MAXIMUM RATINGS

CBO

CEO

EBO

DISS

STG

H I

4.0 A

65 V

35 V

4.0 V

40 W @ T

= 25 C

-65 C to +200 C

-65 C to +150 C

4.4

C/W

DIM

.240 / 6.10

.004 / 0.10

.085 / 2.16

.160 / 4.06

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

ORDER CODE: ASI10602

CHARACTERISTICS

SYMBOL

CEO

CES

EBO

CBO

= 200 mA

= 10 mA

= 30 V

= 5.0 V

= 30 V

= 28 V

= 10 V

= 25

NONETEST

CONDITIONS

MINIMUM TYPICAL MAXIMUM

4.0

2.0

UNITS

---

MHz

= 200 mA

f = 1.0 MHz

f = 150 MHz

= 200 mA

f = 100 MHz

5.0

---

250

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change witout notice.

REV. A

1/1

ASI10602相似产品对比

	ASI10602	HF15-28F
描述	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN,	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4
包装说明	FLANGE MOUNT, O-CRFM-F4	FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
最大集电极电流 (IC)	4 A	4 A
基于收集器的最大容量	50 pF	50 pF
集电极-发射极最大电压	35 V	35 V
配置	SINGLE	SINGLE
最高频带	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-CRFM-F4	O-CRFM-F4
元件数量	1	1
端子数量	4	4
最高工作温度	200 °C	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	FLAT	FLAT
端子位置	RADIAL	RADIAL
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz
Base Number Matches	1	1

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