PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX3VSJ-2
HIGH-SPEED SWITCHING USE
FX3VSJ-2
OUTLINE DRAWING
1.5 max
4
Dimensions in mm
4.5
1.3
10.5 max
1.5 max
8.6 ± 0.3
9.8 ± 0.5
3.0
+0.3
–0.5
0
+0.3
–0
1
5
0.8
B
0.5
1
2
3
3
•
4V DRIVE
•
V
DSS
............................................................. –100V
•
r
DS (ON) (MAX)
.................................................. 1.3Ω
•
I
D
...................................................................... –3A
•
Integrated Fast Recovery Diode (TYP.) ...........70ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
2.6 ± 0.4
1
1
2
3
4
2 4
TO-220S
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–100
±20
–3
–12
–3
–3
–12
20
–55 ~ +150
–55 ~ +150
1.2
4.5
GATE
DRAIN
SOURCE
DRAIN
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
Avalanche drain current (Pulsed) L = 100µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
(1.5)
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX3VSJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –100V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –1A, V
GS
= –10V
I
D
= –1A, V
GS
= –4V
I
D
= –1A, V
GS
= –10V
I
D
= –1A, V
DS
= –5V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
Limits
Min.
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.5
1.0
1.2
–1.0
1.9
480
65
19
8
5
29
15
–1.0
—
70
Max.
—
±0.1
–0.1
–2.0
1.3
1.6
–1.3
—
—
—
—
—
—
—
—
–1.5
6.25
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= –50V, I
D
= –1A, V
GS
= –10V, R
GEN
= R
GS
= 50Ω
I
S
= –1A, V
GS
= 0V
Channel to case
I
S
= –3A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
–5
–3
–2
10ms
100µs
tw =
10µs
32
–10
1
–7
–5
–3
–2
1ms
24
16
–10
0
–7
–5
–3
–2
T
C
= 25°C
Single Pulse
DC
8
–10
–1
0
0
50
100
150
200
–7
–5
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–
5.0
–4.5V
V
GS
=
–10V
Tc = 25°C
Pulse Test
OUTPUT CHARACTERISTICS
(TYPICAL)
–2.0
–4V
Tc = 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
–
4.0
–5V
–4V
–1.6
V
GS
=
–10V
–5V
–4.5V
–
3.0
–3.5V
–
2.0
–3V
–1.0
P
D
= 20W
–1.2
–3V
–0.8
–
0.4
–2.5V
0
0
–
4
–
8
–
12
–
16
–
20
0
0
–2
–4
–6
–8
–10
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Jan.1999
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX3VSJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–20
Tc = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
V
GS
= –4V
–10V
–16
1.6
–12
I
D
=
–6A
1.2
–8
–3A
–1A
0.8
Tc = 25°C
Pulse Test
–4
0.4
0
0
–2
–4
–6
–8
–10
0
–10
–1
–2 –3
–5 –7
–10
0
–2 –3
–5 –7
–10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
1
7
5
4
3
2
75°C
125°C
V
DS
= –5V
Pulse Test
T
C
h =
25°C
DRAIN CURRENT I
D
(A)
–6
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
–8
10
0
7
5
4
3
2
–4
–2
0
0
–2
–4
–6
–8
–10
10
–1
–7
–10
1
–2 –3 –4–5 –7
–10
2
–2 –3 –4–5 –7
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
3
7
5
4
3
2
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
10
2
7
5
4
3
2
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
t
d(off)
t
f
t
d(on)
t
r
Tch = 25°C
V
GS
= –10V
V
DD
= –50V
R
GEN
= R
GS
= 50Ω
–2 –3 –4 –5 –7
–10
0
–2 –3 –4 –5 –7
–10
1
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
2
7
5
4
3
2
Coss
10
1
7
5
4
3
2
Crss
10
1
–3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2 –3
10
0 –1
–10
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Jan.1999
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX3VSJ-2
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
–10
Tch = 25°C
I
D
= –3A
SOURCE CURRENT I
S
(A)
–8
V
DS
=
–20V
–50V
–80V
–8
T
C
=
25°C
75°C
125°C
–6
–6
–4
–4
–2
–2
0
0
4
8
12
16
20
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
–4.0
7
5
4
3
2
V
GS
= –10V
I
D
= 1/2I
D
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= –10V
I
D
= –1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
–3.2
–2.4
10
0
7
5
4
3
2
–1.6
–0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= –1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
1.2
10
1
3
2
1.0
7 D = 1.0
5
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
0.8
10
0
7
5
3
2
0.6
0.4
–50
0
50
100
150
10
–1 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
PULSE WIDTH t
w
(s)
Jan.1999
CHANNEL TEMPERATURE Tch (°C)
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