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1N5655

产品描述1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小502KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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1N5655概述

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N5655规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-13
包装说明HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
最大击穿电压90.2 V
最小击穿电压73.8 V
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-202AA
JESD-30 代码O-MALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料METAL
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
最大重复峰值反向电压66.4 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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1N5629 thru 1N5665A
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru
1N5665A are JEDEC registered selections for unidirectional devices. All
have the same high Peak Pulse Power rating of 1500 W with extremely fast
response times. They are also available in military qualified selections as
described in the Features section herein. They are most often used for
protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in
lower surge levels of IEC61000-4-5. They are also very successful in
protecting airborne avionics and electrical systems. Since their response
time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
Unidirectional TVS series for thru-hole mounting
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 5 V to 171 V
Hermetic sealed DO-13 metal package
JAN/TX/TXV military qualifications also available for
the tighter tolerance “A” suffix devices per MIL-PRF-
19500/500 by adding the JAN, JANTX, or JANTXV
prefix, e.g. JANTXV1N5629A, etc.
For bidirectional TVS in the same DO-13 package,
see separate data sheet for the 1N6036 – 1N6072A
series (also military qualified)
Surface mount equivalent packages also available as
SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA
in separate data sheet (consult factory for other
surface mount options)
Plastic axial-leaded equivalents available in the
1N6267 – 1N6303A series in separate data sheet
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: 1N5629 to 1N5665A
Class 2: 1N5629 to 1N5663A
Class 3: 1N5629 to 1N5655A
Class 4: 1N5629 to 1N5648A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : 1N5629 to 1N5658A
Class 2: 1N5629 to 1N5651A
Class 3: 1N5629 to 1N5643A
Class 4: 1N5629 to 1N5636A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N5629 to 1N5642A
Class 3: 1N5629 to 1N5635A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts for 10/1000
µs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65
o
to +175
o
C
THERMAL RESISTANCE: 50
o
C/W junction to lead at
0.375 inches (10 mm) from body or 110
o
C/W junction to
2
ambient when mounted on FR4 PC board with 4 mm
copper pads (1 oz) and track width 1 mm, length 25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Forward surge current: 200 Amps for 8.3ms half-sine
wave at T
A
= +25
o
C
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
POLARITY: Cathode connected to case and polarity
indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1N5629 thru 1N5665A
5629 thru 1N5665A
*
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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