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IDT70V657S10BF8

产品描述Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
产品类别存储   
文件大小191KB,共23页
制造商IDT (Integrated Device Technology)
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IDT70V657S10BF8概述

Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208

IDT70V657S10BF8规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明TFBGA, BGA208,17X17,32
针数208
Reach Compliance Codenot_compliant
ECCN代码3A991
Is SamacsysN
最长访问时间10 ns
I/O 类型COMMON
JESD-30 代码S-PBGA-B208
JESD-609代码e0
长度15 mm
内存密度1179648 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端口数量2
端子数量208
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装等效代码BGA208,17X17,32
封装形状SQUARE
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.2 mm
最大待机电流0.015 A
最小待机电流3.15 V
最大压摆率0.5 mA
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn63Pb37)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度15 mm
Base Number Matches1

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HIGH-SPEED 3.3V 32K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V657 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
x
x
x
PRELIMINARY
IDT70V657S
x
x
x
x
x
x
x
x
x
x
x
x
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
LVTTL-compatible, single 3.3V (±150mV) power supply
for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in 208-pin Plastic Quad Flatpack, 208-ball fine
pitch Ball Grid Array and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
3 R
BE
2 R
BE
1R
BE
0R
R/
W
R
B
E
0
L
B
E
1
L
B
E
2
L
B
E
3
L
B
E
3
R
BB
EE
2 1
RR
B
E
0
R
BE
1 L
BE
0L
R/
W
L
CE
0 L
CE1 L
CE
0 R
CE1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
32K x 36
MEMORY
ARRAY
I/O - I/O
0L
35L
Di n_L
Di n_R
I/O - I/O
0R
35R
A14 L
A0 L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
14R
A
0R
CE
0 L
CE1L
OE
L
R/WL
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0 R
CE1R
OE
R
R/WR
BUSY
R
BUSY
L
SEM
L
INT
L
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5615 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
JUNE 2001
DSC-5615/3
1
©2001 Integrated Device Technology, Inc.

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