UPT5e3 – UPT48e3
UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
SCOTTSDALE DIVISION
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
DESCRIPTION
Microsemi’s new Powermite UPT series transient voltage suppressors
feature oxide-passivated chips, with high-temperature solder bonds for high
surge capability, and negligible electrical degradation under repeated surge
conditions. Both unidirectional and bidirectional configurations are available.
In addition to its size advantages, Powermite package includes a full
metallic bottom (cathode) that eliminates possibility of solder flux entrapment
at assembly and a unique locking tab serving as an integral heat sink.
Innovative design makes this device fully compatible for use with automatic
insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-216AA
FEATURES
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•
Powermite Package with standoff voltages 5 to 48 V
Both Unidirectional polarities and Bidirectional:
Anode to case bottom (UPT5e3 thru UPT48e3)
Cathode to case bottom (UPT5Re3 thru UPT48Re3)
Bidirectional (UPTB8e3 thru UPTB48e3)
Clamping time less than 100 pico-seconds for
unidirectional
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, or JANTXV are available by
adding MQ, MX, or MV, prefixes respectively to part
numbers, e.g. MXUPT15e3, MVUPTB28e3,
MSPUPU10e3, etc.
RoHS Compliant with e3 suffix part number
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APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
New improved lower leakage current for the
UPT5Re3
Integral heat sink / locking tabs
Full metallic bottom eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: UPT5//UPT5R/UPTB8 to17
Class 2: UPT5//UPT5R/UPTB8 to12
(also add e3 suffix to each part number)
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MAXIMUM RATINGS
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•
Operating and Storage Temperature: –65ºC to
+150ºC
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)
UPT5Re3: 600 Watts
UPT5e3 thru UPT48e3: 1000 Watts
UPT8Re3 thru UPT48Re3: 1000 Watts
UPTB8e3 thru UPTB48e3: 1000 Watts
Peak Pulse Power at 10/1000 µs (See Figure 2).
UPT5Re3: 100 Watts
UPT5e3 thru UPT48e3: 150 Watts
UPT8Re3 thru UPT48Re3: 150 Watts
UPTB8e3 thru UPTB48e3: 150 Watts
Impulse Repetition Rate (duty factor): 0.01%
Thermal resistance: 15ºC/W junction to base tab or
240ºC/W junction to ambient when mounted on FR4
PC board with 1 oz copper
Steady-State Power: 2.5 Watts (base tab
≤112ºC)
Solder Temperatures: 260ºC for 10 s (maximum)
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MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy compound meeting UL94V-0
FINISH: Annealed matte-Tin plating over copper
and readily solderable per MIL-STD-750, method
2026
POLARITY: Cathode or anode to TAB 1 (bottom)
as described in Marking below and Figure 5
MARKING:
Anode to TAB 1:
T plus the last two digits of part
number, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪
Cathode to TAB1:
U plus last two digits of part
number, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪
Bipolar:
B plus the last two digits of part number,
e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
WEIGHT: 0.016 gram (approximate)
See package dimension on last page
Tape & Reel option: Standard per EIA-481-B using
12 mm tape with 3,000 per 7 inch reel or 12,000
per 13 inch reel (add TR7 or TR13 suffix to part
number)
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UPT5-48e3
UPT5R-48Re3 UPTB8-48e3
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Copyright
©
2007
6-26-2007 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
UPT5e3 – UPT48e3
UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
SCOTTSDALE DIVISION
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25
o
C
DEVICE TYPE
(add e3 suffix)
Unidirectional
UPT5
UPT5R
UPT8 & UPT8R
UPT10 & UPT10R
UPT12 &UPT12R
UPT15 & UPT15R
UPT17 & UPT17R
UPT24 & UPT24R
UPT28 &UPT28R
UPT33 &UPT33R
UPT48 &UPT48R
Bi-directional
RATED
STANDOFF
VOLTAGE
V
WM
V
5
5
8
10
12
15
17
24
28
33
48
MINIMUM
BREAKDOWN
VOLTAGE
V
(BR)
@ 1 mA
V
6.0
6.0
9.0
11.0
13.8
16.7
19.0
28.4
31.0
36.8
54.0
MAXIMUM
STANDBY
CURRENT
MAXIMUM
PEAK
PULSE
CURRENT*
I
PP
A
89.4
60
62.1
47.2
40.3
33.9
30.8
22.0
19.2
16.4
11.2
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ 10A*
V
9.5
9.5
13.7
18.0
21.6
26.0
29.2
43.2
47.8
56.7
84.3
MAXIMUM
TEMP.
COEFFICIENT
of V
(BR)
I
D
@ V
WM
μA
50
5
2
2
1
1
1
1
1
1
1
α
V(BR)
%/ C
.030
.030
.040
.045
.050
.055
.060
.070
.075
.080
.090
o
UPTB8
UPTB10
UPTB12
UPTB15
UPTB17
UPTB24
UPTB28
UPTB33
UPTB48
* See Figure 1 for I
PP
waveform of 8/20
µs
Symbol
V
(BR)
V
WM
P
PP
I
D
I
PP
C
SYMBOLS & DEFINITIONS
Definition
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
Standby Current: The maximum current that will flow at the specified voltage and temperature.
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
OUTLINE AND CIRCUIT
tp: Pulse time duration is defined as
that point where the pulse current
decays to 50% of I
PP
.
(Rise time to 100% of I
PP
= 8μs.)
l
P
– PULSE CURRENT – (% of I
PP
)
P
PP
– PEAK PULSE POWER – (W)
EXPONENTIAL PULSE
(Pulse time duration is defined as
that point where the pulse current
decays to 50% of I
PP
.)
UPT5-48e3
UPT5R-48Re3 UPTB8-48e3
t – TIME – (μs)
tp – PULSE TIME
FIGURE 1
Pulse Waveform for Exponential Surge
FIGURE 2
Peak Pulse Power vs. Pulse Duration
Copyright
©
2007
6-26-2007 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
DSP 与 ARM 处理器
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