8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
8Mb
ZBT
®
SRAM
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High frequency and 100 percent bus utilization
Fast cycle times: 6ns, 7.5ns and 10ns
Single +3.3V ±5% power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
Advanced control logic for minimum control
signal interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin/function compatibility with 2Mb, 4Mb, and
18Mb ZBT SRAM
Automatic power-down
100-pin TQFP package
165-pin FBGA package
MT55L512L18P, MT55L512V18P,
MT55L256L32P, MT55L256V32P,
MT55L256L36P, MT55L256V36P
3.3V V
DD
, 3.3V or 2.5V I/O
100-Pin TQFP
1
165-Pin FBGA
NOTE:
1. JEDEC-standard MS-026 BHA (LQFP).
OPTIONS
• Timing (Access/Cycle/MHz)
3.5ns/6ns/166 MHz
4.2ns/7.5ns/133 MHz
5ns/10ns/100 MHz
• Configurations
3.3V I/O
512K x 18
256K x 32
256K x 36
2.5V I/O
512K x 18
256K x 32
256K x 36
• Package
100-pin TQFP
165-pin, 13mm x 15mm FBGA
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Industrial (-40°C to +85°C)**
Part Number Example:
MARKING
-6
-7.5
-10
* A Part Marking Guide for the FBGA devices can be found on Micron’s
Web site—http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
MT55L512L18P
MT55L256L32P
MT55L256L36P
MT55L512V18P
MT55L256V32P
MT55L256V36P
T
F*
None
IT
GENERAL DESCRIPTION
The Micron
®
Zero Bus Turnaround
™
(ZBT
®
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
MT55L256L32PT-7.5
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 – Rev. 2/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
FUNCTIONAL BLOCK DIAGRAM
512K x 18
19
SA0, SA1, SA
MODE
CLK
CKE#
K
ADDRESS
REGISTER 0
19
17
SA1
SA1'
D1
Q1
SA0
SA0'
BURST
D0
Q0
LOGIC
19
ADV/LD#
K
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
19
19
ADV/LD#
BWa#
BWb#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
512K x 9 x 2
18
WRITE
DRIVERS
18
MEMORY
ARRAY
18
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
18
R
E
G
I
S
T
E
R
S
18
D
A
T
A
S
T
E
E
R
I
N
G
18
O
U
T
P
U
T
B
U
F
F
E
R
S
18
DQs
E
E
18
INPUT
REGISTER 1
E
18
INPUT
REGISTER 0
E
OE#
CE#
CE2
CE2#
READ LOGIC
FUNCTIONAL BLOCK DIAGRAM
256K x 32/36
18
SA0, SA1, SA
MODE
CLK
CKE#
K
ADDRESS
REGISTER 0
18
16
SA1
SA1'
D1
Q1
SA0
SA0'
BURST
D0
Q0
LOGIC
18
ADV/LD#
K
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
18
18
ADV/LD#
BWa#
BWb#
BWc#
BWd#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
36
WRITE
DRIVERS
36
256K x 8 x 4
(x32)
256K x 9 x 4 36
(x36)
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
36
R
E
G
I
S
T
E
R
S
36
D
A
T
A
S
T
E
E
R
I
N
G
36
O
U
T
P
U
T
B
U
F
F
E
R
S
36
DQs
DQPa
DQPb
DQPc
DQPd
E
E
INPUT
REGISTER 1
E
36
INPUT
REGISTER 0
E
OE#
CE#
CE2
CE2#
READ LOGIC
NOTE:
Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions, and timing diagrams
for detailed information.
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 – Rev. 2/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
GENERAL DESCRIPTION (continued)
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK), and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin (MODE) that selects between interleaved and linear
burst modes. MODE may be tied HIGH, LOW, or left
unconnected if burst is unused. The data-out (Q),
enabled by OE#, is registered by the rising edge of CLK.
WRITE cycles can be from one to four bytes wide as
controlled by the write control inputs.
All READ, WRITE, and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst
addresses can be internally generated as controlled by
the burst advance pin (ADV/LD#). Use of burst mode
is optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
To allow for continuous, 100 percent use of the data
bus, the pipelined ZBT SRAM uses a LATE LATE WRITE
cycle. For example, if a WRITE cycle begins in clock cycle
one, the address is present on rising edge one. BYTE
WRITEs need to be asserted on the same cycle as the
address. The data associated with the address is required
two cycles later, or on the rising edge of clock cycle three.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes to
be written. During a BYTE WRITE cycle, BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls
DQc pins; and BWd# controls DQd pins. Cycle types
can only be defined when an address is loaded, i.e.,
when ADV/LD# is LOW. Parity/ECC bits are only
available on the x36 version.
Micron’s 8Mb ZBT SRAMs operate from a +3.3V V
DD
power supply, and all inputs and outputs are LVTTL-
compatible. Users can choose either a 2.5V or 3.3V I/O
version. The device is ideally suited for systems requir-
ing high bandwidth and zero bus turnaround delays.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 – Rev. 2/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x18
NC
NC
NC
x32
NF
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
DD
V
DD
V
DD
1
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
x36
DQPc
DQc
DQc
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32
x36
V
SS
V
DD
Q
NC
DQd DQd
NC
DQd DQd
NC
NF
DQPd
MODE (LBO#)
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
SA
SA
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x18
NC
NC
NC
x32
x36
NF
DQPa
DQa
DQa
DQa
DQa
V
DD
Q
V
SS
DQa DQa
DQa DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
V
DD
1
V
SS
DQb DQb
DQb DQb
V
DD
Q
V
SS
DQb DQb
DQb DQb
DQb DQb
DQb DQb
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32
x36
V
SS
V
DD
Q
DQb DQb
DQb DQb
NF
DQPb
SA
SA
SA
NF
2
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc# BWc#
BWd# BWd#
CE2
CE#
SA
SA
NC
NC
SA
NC
NC
DQb
DQb
DQc
DQc
DQc
DQc
NC
NC
DQb
DQb
DQc
DQc
DQb
DQb
DQd
DQd
DQa
DQa
NC
NC
DQb
DQb
DQb
NC
DQd
DQd
DQd
DQd
DQa
DQa
DQa
NC
NOTE:
1. Pins 16 and 66 do not have to be connected directly to V
DD
if the input voltage is
≥
V
IH
.
2. Pin 84 is reserved for expansion to 18Mb device.
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 – Rev. 2/02
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
PIN ASSIGNMENT (TOP VIEW)
100-PIN TQFP
SA
NC
NC
V
DD
Q
V
SS
NC
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
V
DD
1
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
SA
NF
2
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
SA
SA
SA
NF
2
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NF/DQPb
3
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
1
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NF/DQPa
3
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
DD
V
DD
V
DD
1
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NOTE:
1. Pins 16 and 66 do not have to be connected directly to V
DD
if the input voltage is
≥
V
IH
.
2. Pin 84 is reserved for expansion to 18Mb device.
3. NF for x32 version, DQPx for x36 version.
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 – Rev. 2/02
NF/DQPc
3
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
DD
V
DD
V
DD
1
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NF/DQPd
3
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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