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1N5621

产品描述1 A, 800 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小51KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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1N5621概述

1 A, 800 V, SILICON, SIGNAL DIODE

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1N5615 THRU 1N5623
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage -
200 to 1000 Volts
DO-204AP
Forward Current -
1.0 Ampere
FEATURES
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
High temperature metallurgically bonded
construction
Hermetically sealed case
Glass passivated cavity-free junction
1.0 Ampere operation
at T
A
=55°C with no
thermal runaway
Typical I
R
less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
P
A
T
E
N
T
E
D
*
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-204AP Solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.02 ounce, 0.56 gram
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N5615
1N5617
1N5619
1N5621
1N5623
UNITS
*Maximum repetitive peak reverse voltage
Maximum RMS voltage
*Maximum DC blocking voltage
*Minimum reverse breakdown voltage at 50
µA
*Maximum average forward rectified current
0.375” (9.5mm) lead length at
T
A
=55°C
*Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
*Maximum instantaneous forward voltage at 1.0A
*Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=100°C
T
A
=200°C
V
RRM
V
RMS
V
DC
V
(BR)
I
(AV)
200
140
200
220
400
280
400
440
600
420
600
660
1.0
800
560
800
880
1000
700
1000
1100
Volts
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
T
J
T
STG
150
45
150
35
50.0
1.2
0.5
25.0
1500.0
250
25
55.0
-65 to +175
-65 to +200
300
20
500
15
Amps
Volts
µA
ns
pF
°C/W
°C
°C
*Maximum reverse recovery time
(NOTE 1)
*Maximum junction capacitance
(NOTE 2
)
Typical thermal resistance
(NOTE 3)
*Operating junction temperature range
*Storage temperature range
NOTES:
(1) Reverse recovery test conditions I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 12 Volts
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B.mounted
*JEDEC registered values
4/98

1N5621相似产品对比

1N5621 1N5615 1N5617 1N5619 1N5623
描述 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE DIODE RECT STD REC A-PKG 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE

 
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