IL201/IL202/IL203
Phototransistor
Optocoupler
FEATURES
• High Current Transfer Ratio, 75% to 450%
• Minimum Current Transfer Ratio, 10%
• Guaranteed at
I
F
=1.0mA
• High Collector-Emitter Voltage, BV
CEO
=70V
• Long Term Stability
• Industry Standard DIP Package
• Underwriters Lab File #E52744
•
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
.300 (7.62)
typ.
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25°C....................... 100 mW
Derate Linearly from 25°C ................. 1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage,
BV
CEO
........................................................ 70 V
Emitter-Collector Breakdown Voltage,
BV
ECO
....................................................... 7.0 V
Collector-Base Breakdown Voltage,
BV
CBO
....................................................... 70 V
Power Dissipation.................................... 200 mW
Derate Linearly from 25°C ................... 2.6 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 V
RMS
Total Package Dissipation at 25°C A
(LED + Detector).................................. 250 mW
Derate Linearly from 25°C ................... 3.3 mW/°C
Creepage ...........................................7.0 min mm
Clearance ...........................................7.0 min mm
Storage Temperature ................ –55°C to +150°C
Operating Temperature ............ –55°C to +100°C
Lead Soldering Time at 260°C ..................10 sec.
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Characteristics
0°C to 70°C unless otherwise specified
Parameter
Emitter
Forward Voltage
Forward Voltage
Breakdown Voltage
Reverse Current
Detector
Transistor Gain
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Base
Leakage Current
Collector-Emitter
Package
Base Current Transfer
Ratio
CTRCB
V
CEsat
DC Current Transfer Ratio CTR
IL201
IL202
IL203
DC Current Transfer Ratio CTR
IL201
IL202
IL203
0.15
—
—
—
—
0.4
%
V
%
75
125
225
10
30
50
100
200
300
—
150
250
450
—
%
I
F
=10 mA
V
CB
=10 V
I
F
=10 mA
I
C
=2.0 mA
I
F
=10 mA,
V
CE
=10 V
HFE
BV
CEO
BV
ECO
BV
CBO
I
CEO
100
70
7.0
70
—
200
—
10
90
5.0
—
—
—
—
50
nA
—
V
V
CE
=5.0 V
I
C
=100
µA
I
C
=100
µA
I
E
=100
µA
I
C
=10
µA
V
CE
=10 V,
T
A
=25°C
I
R
V
F
—
—
6.0
—
1.2
1.0
20
0.1
1.5
1.2
—
10
µA
V
I
F
=20 mA
I
F
=1.0 mA
I
R
=10
µA
V
R
=6.0 V
T
A
=25°C
Symbol
Min.
Typ.
Max.
Unit
Condition
I
F
=1.0 mA,
V
CE
=10 V
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
1
April 29, 1999
Figure 1. Forward voltage versus forward current
1.4
VF - Forward Voltage - V
Figure 5. Normalized non-saturated and saturated
CTR at
T
A
=85°C versus LED current
1.5
NCTR - Normalized CTR
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
Ta = -55°C
Ta = 25°C
1.0
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
Ta = 100°C
0.5
Ta = 85°C
NCTR(SAT)
NCTR
1
10
IF - LED Current - mA
100
1
10
IF - Forward Current - mA
100
0.0
.1
Figure 2. Normalized non-saturated and
saturated CTR at
T
A
=25°C versus LED current
1.5
NCTR - Normalized CTR
Figure 6. Collector-emitter current versus temperature
and LED current
35
Ice - Collector Current - mA
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25°C
CTRce(sat) Vce = 0.4V
30
25
20
15
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
25°C
85°C
70°C
50°C
1.0
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
100
Figure 3. Normalized non-saturated and
saturated CTR at
T
A
=50°C versus LED current
1.5
Figure 7. Collector-emitter leakage current versus
temperature
Iceo - Collector-Emitter - nA
10
10
5
4
NCTR - Normalized CTR
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
Ta = 50°C
1.0
103
102
101
100
10-1
10-2
-20
0
20
40
60
80
100
Ta - Ambient Temperature - °C
Vce = 10V
TYPICAL
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
100
Figure 4. Normalized non-saturated and
saturated CTR at
T
A
=70°C versus LED current
1.5
Figure 8. Normalized CTRcb versus LED current
and temperature
NCTRcb - Normalized CTRcb
1.5
Normalized to:
IF =10 mA
Vcb = 9.3 V
Ta = 25°C
NCTR - Normalized CTR
Normalized to:
Vce = 10V IF = 10mA
,
Ta = 25°C
CTRce(sat) Vce = 0.4V
1.0
1.0
0.5
Ta = 70°C
NCTR(SAT)
NCTR
.1
1
10
IF - LED Current - mA
100
0.5
0.0
25°C
50°C
70°C
.1
1
10
IF - LED Current - mA
100
IL201/202/203
April 29, 1999
0.0
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
2
Figure 9. Collector base photocurrent versus LED
current
1000
Icb - Collector Base
Photocurrent - µA
Ta = 25°C
100
10
1
.1
.01
.1
1
10
IF - LED Current - mA
100
Icb = 1.0357 *IF ^1.3631
Figure 12. Propagation delay versus collector load
resistor
tpLH - Propagation Delay - µs
1000
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpHL
2.5
tpLH - Propagation Delay - µs
100
2.0
10
tpLH
1
.1
1.5
1
10
RL - Collector Load Resistor - KΩ
1.0
100
Figure 10. Normalized photocurrent versus
I
F
and temperature
10
N orma lized Photocurrent
Figure 13. Normalized non-saturated and saturated
CTR
ce
versus LED current
NCTRce - Normalized CTRce
2.0
1.5
1.0
0.5
Vce = .4 V
0.0
.1
1
10
IF - LED Current - mA
100
Normalized to:
Ta = 25 °C
Vce = 5 V
IF = 1 mA
Vce = 5 V
Normalized to:
If = 10ma, Ta = 25°C
1
NIB-Ta= 20°C
.1
NIb,Ta=25°C
NIb,Ta=50°C
NIb,Ta=70°C
.01
.1
1
10
100
If -LED C urrent - mA
Figure 11. Normalized saturated HFE versus base
current and temperature
2.0
Figure 14. Normalized non-saturated HFE versus
base current and temperature
1.2
NHFE - Normalized HFE
NHFE(sat) - Normalized
Saturated HFE
70°C
50°C
25°C
1.5
1.0
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
70°C
50°C
1.0
0.8
0.6
0.4
25°C
-20°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25°C
Vce = 0.4 V
0.5
0.0
1
10
100
Ib - Base Current - µA
1000
1
10
100
Ib - Base Current - µA
1000
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
3
IL201/202/203
April 29, 1999
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