IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
IL* Package 'FF' (marked I_ _ _ FF)
ILD*/ILQ* Package 'GG' (marked I_ _ _ GG)
'X' SPECIFICATION APPROVALS
Add 'X' after part number
l
IL1
IL2
IL5
IL74
2.54
7.0
6.0
1.2
7.62
6.62
1
2
3
Dimensions in mm
6
5
4
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
BSI approved - Certificate No. 8001
7.62
4.0
3.0
0.5
13°
Max
0.26
l
DESCRIPTION
The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
Three package types
l
High Current Transfer Ratio (50% min)
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
High BV
CEO
(70V min)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
ILD1
ILD2
ILD5
ILD74
3.0
0.5
2.54
1
7.0
6.0
2
3
4
10.16
9.16
7.62
4.0
3.0
0.5
3.35
8
7
6
5
1.2
3.0
13°
Max
0.26
1
2
3
16
15
14
13
12
11
10
9
7.62
4.0
3.0
0.5
13°
Max
0.26
ILQ1
ILQ2
ILQ5
ILQ74
2.54
0.5
3.35
4
5
7.0
6.0
6
7
8
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
1/4/03
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91088m-AAS/A6
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
MIN TYP MAX UNITS
1.2
1.65
10
V
µ
A
TEST CONDITION
I
F
= 50mA
V
R
= 4V
50mA
6V
70mW
70V
50V
6V
150mW
Output
70
50
6
50
V
V
V
nA
I
C
= 1mA , ( Note 2 )
I
C
= 1mA , ( Note 2 )
I
E
= 100
µ
A
V
CE
= 10V
Current Transfer Ratio (CTR) (Note 2)
IL1, ILD1, ILQ1
20
IL2, ILD2, ILQ2
100
IL5, ILD5, ILQ5
50
IL74, ILD74, ILQ74
12.5
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1
IL2, ILD2, ILQ2
IL5, ILD5, ILQ5
IL74, ILD74, ILQ74
12.5
Collector-emitter Saturation Voltage,V
CE (SAT)
Input to Output Isolation Voltage V
ISO
5300
Input to Output Isolation Voltage V
ISO
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
Output Fall Time
tf
300
500
400
%
%
%
%
%
%
%
%
V
V
RMS
V
PK
Ω
µ
s
µ
s
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
16mA I
F
, 5V V
CE
10mA I
F
, 0.4V V
CE
10mA I
F
, 0.4V V
CE
10mA I
F
, 0.4V V
CE
16mA I
F
, 0.5V V
CE
16mA I
F
, 2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
I
F
= 10mA
V
CC
= 5V, R
L
= 75
Ω
75
170
100
0.4
2
2
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
1/4/03
DB91088m-AAS/A6
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Relative current transfer ratio
1.5
Relative Current Transfer Ratio
vs. Ambient Temperature
150
I
F
= 10mA
V
CE
= 0.4V
1.0
100
0.5
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Relative current transfer ratio
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
2
5
10
20
50
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
V
CE
= 10V
T
A
= 25°C
V
CE
= 0.4V
T
A
= 25°C
Relative current transfer ratio
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
1/4/03
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
10
20
50
Forward current I
F
(mA)
DB91088m-AAS/A6
Fig.1 Forword Current
vs. Ambient Temperatute
60
Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Collector Power dissipation Pc (mW)
200
Forward current I
F
(mA)
50
40
30
20
10
0
-25
150
100
50
0
25
50
75
100
o
125
0
-25
0
25
50
75
100
o
125
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
1mA
3mA
5mA
Collecotr-emitter saturation voltage
V
CE
(sat) (V)
Ic= 0.5mA
7mA
6
5
4
3
2
1
Ta= 25 C
O
Fig.4 Forward Current vs. Forward
Voltage
500
o
Forward current I
F
(mA)
200
100
50
20
10
5
2
Ta= 75 C
50 C
o
25 C
0C
-25 C
o
o
o
0
0
5
10
15
Forward current I
F
(mA)
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward voltage V
F
(V)
Fig.5 Current Transfer Ratio vs.
Forward Current
200
180
160
140
120
100
80
60
40
20
0
1
2
5
10
20
50
Forward current I
F
(mA)
V
CE
= 5V
Ta= 25 C
o
Fig.6 Collector Current vs.
Collector-emitter Voltage
30
I
F
= 30mA
Ta= 25 C
Pc(MAX.)
20
15
10
5mA
5
0
0
1
2
3
4
5
6
7
8
9
Collector-emitter voltage V
CE
(V)
o
Current transfer ratio CTR (%)
Collector current Ic (mA)
25
20mA
10mA
01/04/03
DB91088m-AAS/A6
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
150
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Collector-emitter saturation voltage
V
CE
(sat) (V)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-25
0
25
50
75
o
Relative current transfer ratio (%)
I
F
= 5mA
V
CE
= 5V
I
F
= 20mA
Ic= 1mA
100
50
0
-30
0
25
50
75
o
100
100
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Ambient Temperature
10
-5
Fig.10 Response Time vs. Load
Resistance
500
200
100
50
20
10
5
2
1
0.5
0.2
0.05
ts
V
CE
= 2V
Ic= 2mA
Ta= 25 C
o
V
CE
= 20V
Collector dark current I
CEO
(A)
-6
10
-7
Response time ( s)
10
-8
tr
tf
td
10
-9
10
-10
10
-11
10
-25
0
25
50
75
o
100
0.1 0.2
0.5
1
2
5
10
Ambient temperature Ta ( C)
Load resistance R
L
(k )
Fig.11 Frequency Response
Test Circuit for Response Time
Vcc
V = 5V
CE
Ic= 2mA
Ta= 25 C
o
Input
R
D
R
L
Input
Output
Output
10%
90%
Voltage gain Av (dB)
0
-5
-10
R
L
10k
=
-15
1k
td
tr
ts
tf
Test Circuit for Frequency Response
100
Vcc
R
D
R
L
Output
-20
0.5 1
2
5 10 20
100
500 1000
Frequency f (kHz)
01/04/03
DB91088m-AAS/A6
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
