IL74
DUAL CHANNEL
ILD74
QUAD CHANNEL
ILQ74
SINGLE CHANNEL
Phototransistor Optocoupler
FEATURES
• 7400 Series T
2
L Compatible
• Transfer Ratio, 35% Typical
• Coupling Capacitance, 0.5 pF
• Single, Dual, & Quad Channel
• Industry Standard DIP Package
• Underwriters Lab File #E52744
•
V
VDE Approvals #0884
(Optional with Option 1, Add -X001 Suffix)
D E
Dimensions in inches (mm)
Single Channel
3
.248 (6.30)
.256 (6.50)
4
5
6
NC 3
2
1
pin one ID
Anode 1
Cathode 2
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
DESCRIPTION
The IL74 is an optically coupled pair with a
Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of
electrical isolation between input and output.
The IL74 is especially designed for driving
medium-speed logic, where it may be used to
eliminate troublesome ground loop and noise
problems. Also it can be used to replace relays
and transformers in many digital interface
applications, as well as analog applications
such as CRT modulation.
The ILD74 has two isolated channels in a sin-
gle DIP package; the ILQ74 has four isolated
channels per package.
.300 (7.62)
typ.
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Dual Channel
4
.255 (6.48)
.268 (6.81)
5
6
7
8
3
2
1
pin one ID
Anode
Cathode
Cathode
1
2
3
4
8 Emitter
7 Collector
6 Collector
5 Emitter
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
Anode
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10
°
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Quad Channel
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12
13
14
15
16
Anode 1
Cathode 2
Cathode 3
Anode 4
Anode 5
Cathode 6
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9
Emitter
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
Cathode
7
Anode 8
.300 (7.62)
typ.
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–100
March 1, 2000-00
Maximum Ratings
Emitter
(each channel)
Peak Reverse Voltage ...................................................................... 3.0 V
Continuous Forward Current .......................................................... 60 mA
Power Dissipation at 25
°
C........................................................... 100 mW
Derate Linearly from 25
°
C ..................................................... 1.33 mW/
°
C
Detector
(each channel)
Collector-Emitter Breakdown Voltage ............................................... 20 V
Emitter-Base Breakdown Voltage ..................................................... 5.0 V
Collector-Base Breakdown Voltage .................................................. 70 V
Power Dissipation at 25
°
C........................................................... 150 mW
Derate Linearly from 25
°
C ....................................................... 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ........................................... 5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C...............................................................
≥
10
11
Ω
Total Package Dissipation
at 25
°
C Ambient (LED Plus Detector)
IL74 .......................................................................................... 200 mW
ILD74 ....................................................................................... 400 mW
ILQ74 ....................................................................................... 500 mW
Derate Linearly from 25
°
C
IL74 ...................................................................................... 2.7 mW/
°
C
ILD74 ................................................................................. 5.33 mW/
°
C
ILQ74 ................................................................................. 6.67 mW/
°
C
Creepage ...................................................................................
≥
7.0 mm
Clearance ...................................................................................
≥
7.0 mm
Storage Temperature .................................................... –55
°
C to +150
°
C
Operating Temperature ................................................ –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ...................................................... 10 sec.
Electrical Characteristics
T
A
=25
°
C
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown
Voltage,
Collector-Emitter
Leakage Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current Transfer
Ratio
Saturation Voltage,
Collector-Emitter
Resistance, Input to
Output
Capacitance, Input
to Output
Switching Times
CTR
DC
12.5
—
—
—
—
35
0.3
100
0.5
3.0
—
0.5
—
—
—
%
V
G
Ω
pF
µ
s
BV
CEO
20
50
—
V
Min.
Typ.
Max.
Unit
Condition
Figure 1. Forward voltage versus forward current
1.4
VF - Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
Ta = -55°C
Ta = 25°C
Ta = 85°C
1
10
IF - Forward Current - mA
100
Figure 2. Normalized non-saturated and saturated
CTR at
T
A
=25
°
C versus LED current
NCTR - Normalized CTR
1.5
Normalized to:
V
CE
= 10 V, I
F
= 10 mA
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
1.0
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
I
F
- LED Current - mA
100
Figure 3. Normalized non-saturated and saturated
CTR at
T
A
=50
°
C versus LED current
NCTR - Normalized CTR
1.5
Normalized to:
V
CE
= 10V, I
F
= 10 mA, T
A
= 25°C
CTRce(sat) V
CE
= 0.4V
T
A
= 50°C
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
I
F
- LED Current - mA
100
V
F
I
R
C
O
—
—
—
1.3
0.1
25
1.5
100
—
V
µ
A
pF
I
F
=20 mA
V
R
=3.0 V
V
R
=0
I
C
=1.0 mA
1.0
I
CEO
C
CE
—
—
5.0
10.0
500
—
nA
pF
V
CE
=5.0 V
I
F
=0
V
CE
=0,
F=1.0 MHz
Figure 4. Normalized non-saturated and saturated
CTR at
T
A
=70
°
C versus LED current
NCTR - Normalized CTR
1.5
Normalized to:
V
CE
= 10 V, I
F
= 10 mA
T
A
= 25°C
CTRce(sat) V
CE
= 0.4V
T
A
= 70°C
0.5
NCTR(SAT)
NCTR
.1
1
10
I
F
- LED Current - mA
100
I
F
=16 mA,
V
CE
=5.0 V
I
C
=2.0 mA
I
F
=16 mA
—
—
R
L
=100
Ω
,
V
CE
=10 V,
I
C
=2.0 mA
1.0
V
CEsat
R
IO
C
IO
t
ON
,
t
OFF
0.0
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–101
IL/ILD/ILQ74
March 1, 2000-00
Figure 5. Normalized non-saturated and saturated CTR
at
T
A
=85
°
C versus LED current
NCTR - Normalized CTR
1.5
Normalized to:
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
T
A
= 85°C
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
I
F
- LED Current - mA
100
Figure 9. Collector base photocurrent versus
LED current
1000
Icb - Collector Base
Photocurrent - µA
Ta = 25°C
100
10
1
.1
.01
.1
1
10
IF - LED Current - m
100
Icb = 1.0357 *IF ^1.3631
1.0
Figure 6. Collector-emitter current versus temperature
and LED current
35
Ice - Collector Current - mA
30
25
20
15
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
25°C
85°C
70°C
50°C
Figure 10. Normalized photocurrent versus
I
F
and temperature
10
Normalized Photocurrent
Normalized to:
I
F
= 10 ma, T
A
= 25°C
1
.1
NIB-T
A
=-20°C
NIb,T
A
=25°C
NIb,T
A
=50°C
NIb,T
A
=70°C
.1
1
10
100
.01
I
F
- LED Current - mA
Figure 7. Collector-emitter leakage current versus
temperature
I
CEO
- Collector-Emitter - nA
10
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
-2
-20
0
20
40
60
80
100
T
A
- Ambient Temperature -
°C
V
CE
= 10 V
Typical
Figure 11. Normalized non-saturated HFE versus
base current and temperature
1.2
NHFE - Normalized HFE
70°C
50°C
1.0
0.8
0.6
0.4
1
25°C
-20°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25°C
10
100
Ib - Base Current - µA
1000
Figure 8. Normalized CTR
cb
versus LED current
and temperature
NCTRcb - Normalized CTRcb
Figure 12. Normalized saturated HFE versus base
current and temperature
1.5
NHFE(sat) - Normalized
Saturated HFE
70°C
1.0
25°C
-20°C
0.5
V
CE
= 0.4 V
0.0
1
10
100
I
B
- Base Current - (µA)
1000
IL/ILD/ILQ74
2–102
March 1, 2000-00
1.5
Normalized to:
IF =10 mA
Vcb = 9.3 V
Ta = 25°C
1.0
50°C
Normalized to:
V
CE
= 10 V
I
B
= 20
µA
T
A
= 25°C
0.5
25°C
50°C
70°C
0.0
.1
1
10
IF - LED Current - mA
100
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Figure 13. Propagation delay versus collector load resistor
1000
Figure 14. Propagation delay versus collector load resistor
1000
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpHL
2.5
tpHL - Propagation Delay - µs
IL/ILD/ILQ74
2–103
March 1, 2000-00
tpLH - Propagation Delay - µs
tpHL - Propagation Delay - µs
100
2.0
tpLH - Propagation Delay - µs
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpHL
2.5
100
2.0
10
tpLH
1
.1
1
10
RL - Collector Load Resistor - KΩ
100
1.5
10
tpLH
1
.1
1
10
RL - Collector Load Resistor - KΩ
100
1.5
1.0
1.0
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
