ILD615
QUAD CHANNEL
ILQ615
DUAL CHANNEL
Phototransistor Optocoupler
FEATURES
• Identical Channel to Channel Footprint
• Current Transfer Ratio (CTR) Range,
I
F
=10 mA
ILD/Q615-1: 40–80% Min.
ILD/Q615-2: 63–125% Min.
ILD/Q615-3: 100–200% Min.
ILD/Q615-4: 160–320% Min.
• Guaranteed CTR,
I
F
=1.0 mA
ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
ILD/Q615-3: 34% Min.
ILD/Q615-4: 56% Min.
• High Collector-Emitter Voltage, BV
CEO
=70 V
• Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
• Field-Effect Stable by TRIOS
(
TR
ansparent
IO
n
S
hield)
• Isolation Test Voltage from Double Molded
Package, 5300 V
RMS
• UL Approval #E52744
•
V
VDE #0884 Available with Option 1
D E
Dimensions in inches (mm)
pin
one ID
Anode 1
5
6
7
8
Cathode 2
Anode 3
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
Cathode 4
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10°
3°–9°
.008 (.20)
.012 (.30)
Anode 1
Cathode 2
pin
one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12
13
14
15
16
4
.255 (6.48)
.268 (6.81)
3
2
1
8
7
6
5
.300 (7.62)
typ.
Collector
Emitter
Collector
Emitter
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
Anode 3
Cathode 4
Anode 5
Cathode 6
Anode 7
Cathode 8
.300 (7.62)
typ.
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage .............................................. 6.0 V
Forward Current ........................................... 60 mA
Surge Current ................................................. 1.5 A
Power Dissipation ...................................... 100 mW
Derate Linearly from 25
°
C ................... 1.33 mW/
°
C
Detector
Collector-Emitter Reverse Voltage .................. 70 V
Emitter-Collector Reverse Voltage ................. 7.0 V
Collector Current .......................................... 50 mA
Collector Current (t <1.0 ms) ...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate Linearly from 25
°
C..................... 2.0 mW/
°
C
Package
Storage Temperature.................... –55
°
C to +150
°
C
Operating Temperature ............... –55
°
C to +100
°
C
Junction Temperature.................................... 100
°
C
Soldering Temperature
(2.0 mm distance from case bottom) ........ 260
°
C
Package Power Dissipation, ILD615.......... 400 mW
Derate Linearly from 25
°
C.................. 5.33 mW/
°
C
Package Power Dissipation, ILQ615 ......... 500 mW
Derate Linearly from 25
°
C................. 6.67 mW/
°
C
Isolation Test Voltage (t=1.0 sec.).......... 5300 V
RMS
Creepage .................................................
≥
7.0 mm
Clearance.................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ..............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ............................
≥
10
11
Ω
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
DESCRIPTION
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con-
structed using over/under leadframe optical coupling and double molded
insulation technology resulting a Withstand Test Voltage of 7500 VAC
PEAK
and a Working Voltage of 1700 V
RMS
.
The binned min./max. and linear CTR characteristics combined with the
TRIOS (TRansparent IOn Shield) field-effect process make these devices
well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran-
sients found in many industrial control environments.
Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at
I
F
=1.0 mA.
See Appnote 45, “
How to Use Optocoupler Normalized Curves
”.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–193
March 9, 2000-20
Characteristics
T
A
=25
°
C
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Collector-Emitter Leakage Current, -1, -2
Collector-Emitter Leakage Current, -3, -4
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Thermal Resistance, Junction to Lead
Package Transfer Characteristics
Channel/Channel CTR Match
ILD/Q615-1
Saturated Current Transfer Ratio
Current Transfer Ratio
Current Transfer Ratio
ILD/Q615-2
Saturated Current Transfer Ratio
Current Transfer Ratio
Current Transfer Ratio
ILD/Q615-3
Saturated Current Transfer Ratio
Current Transfer Ratio
Current Transfer Ratio
ILD/Q615-4
Saturated Current Transfer Ratio
Current Transfer Ratio
Current Transfer Ratio
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
Insulation Resistance
Channel to Channel Isolation
Min.
Typ.
Max.
Unit
Condition
V
F
V
BR
I
R
C
O
R
THJL
1.0
6.0
—
—
—
1.15
30
0.01
25
750
1.3
—
10
—
—
V
V
µ
A
pF
K/W
I
F
=10 mA
I
R
=10
µ
A
V
R
=6.0 V
V
R
=0 V, f=1.0 MHz
—
C
CE
I
CEO
I
CEO
BV
CEO
BV
ECO
—
—
—
70
7.0
—
—
1 to 1
6.8
2.0
5.0
—
—
500
—
—
—
50
100
—
—
—
—
2 to 1
pF
nA
nA
V
V
K/W
—
—
V
CE
=5.0 V, f=1.0 MHz
V
CE
=10 V
V
CE
=10 V
I
CE
=0.5 mA
I
E
=0.1 mA
—
—
R
THJL
—
CTRX/CTRY
I
F
=10 mA,
V
CE
=5.0 V
CTR
CEsat
CTR
CE
CTR
CE
—
40
13
25
60
30
—
80
—
%
%
%
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=5.0 V
I
F
=1.0 mA,
V
CE
=5.0 V
CTR
CEsat
CTR
CE
CTR
CE
—
63
22
40
80
45
—
125
—
%
%
%
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=5.0 V
I
F
=1.0 mA,
V
CE
=5.0 V
CTR
CEsat
CTR
CE
CTR
CE
—
100
34
60
150
70
—
200
—
%
%
%
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=5.0 V
I
F
=1.0 mA,
V
CE
=5.0 V
CTR
CEsat
CTR
CE
CTR
CE
—
160
56
100
200
90
—
320
—
%
%
%
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=5.0 V
I
F
=1.0 mA,
V
CE
=5.0 V
CMH
CML
—
—
—
—
10
12
500
5000
5000
0.01
0.8
10
14
—
—
—
—
—
—
—
V/
µ
s
V/µs
pF
pF
Ω
VAC
V
CM
=50 V
P-P
,
R
L
=1.0 k
Ω
,
I
F
=0 mA
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=10 mA
—
C
CM
C
I-O
R
S
—
V
IO
=0 V, f=1.0 MHz
V
IO
=500 V,
T
A
=25
°
C
—
ILD/Q615
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–194
March 9, 2000-20
SWITCHING TIMES
Figure 1. Non-saturated switching timing
V
CC
=5 V
I
F
=10 mA
F=10 KHz,
DF=50%
V
O
R
L
=75
Ω
Parameter
Typ.
3.0
2.0
2.3
2.0
1.1
2.5
Unit
µs
µs
µs
µs
µs
µs
Test
Condition
t
ON
t
r
t
OFF
t
f
t
PHL
Propagation H-L (50% of V
PP
)
t
PHL
Propagation L-H
R
L
=75
Ω
I
F
=10 mA
V
CC
=5.0 V
Figure 2. Saturated switching timing
F=10 KHz,
DF=50%
V
CC
=5 V
R
L
V
O
Parameter
-1
I
F
=20 mA
Typ.
-2,-3
I
F
=10 mA
Typ.
4.3
2.8
25
14
2.6
-4
I
F
=5.0 mA
Typ.
6.0
4.6
25
15
5.4
Unit
µs
µs
µs
µs
µs
Test
Condition
t
ON
t
r
t
OFF
Figure 3. Non-saturated switching timing
I
F
3.0
2.0
18
11
1.6
R
L
=1.0 KΩ
V
CC
=5.0 V
V
TH
=1.5 V
t
f
t
PHL
Propagation
H-L
t
PLH
Propagation
L-H
8.6
7.2
7.4
µs
t
PHL
V
O
t
PLH
t
S
50%
t
F
t
off
Figure 5. Maximum LED current versus ambient temperature
IF - Maximum LED Current - mA
120
100
80
60
40
20
0
--60
-40
-20
0
20
40
60
80
100
TJ (MAX)=100°C
t
D
t
R
t
on
Figure 4. Saturated switching timing
I
F
200
Ta - Ambient Temperature -
°C
Figure 6. Maximum LED power dissipation
P
LED
- LED Power - mW
V
O
t
D
t
R
t
PLH
V
TH
=1.5 V
t
F
150
100
50
t
PHL
t
S
0
--60
-40
-20
0
20
40
60
80
100
Ta - Ambient Temperature -
°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–195
ILD/Q615
March 9, 2000-20
Figure 7. Forward voltage versus forward current
1.4
Figure 11. Normalization factor for non-saturated
and saturated CTR
T
A
=25°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
1.5
1.0
0.5
T
A
= 25°C
0.0
.1
1
10
I
F
- LED Current - mA
100
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
NCTRce(sat)
VF - Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
Ta = -55°C
Ta = 25°C
Ta = 85°C
1
10
IF - Forward Current - mA
100
Figure 8. Peak LED current versus pulse detection, Tau
If(pk) - Peak LED Current - mA
10000
Duty Factor
.005
.01
1000 .02
.05
.1
.2
.5
100
τ
Figure 12. Normalization factor for non-saturated
and saturated CTR
T
A
=50°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
1.5
1.0
NCTRce(sat)
0.5
T
A
= 50°C
0.0
.1
1
10
I
F
- LED Current - mA
100
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
t
τ
DF = /t
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t - LED Pulse Duration - s
Figure 9. Maximum detector power dissipation
200
- Detector Power - mW
Figure 13. Normalization factor for non-saturated
and saturated CTR
T
A
=70°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
1.5
1.0
0.5
0.0
.1
1
10
I
F
- LED Current - mA
100
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
150
100
NCTRce(sat)
T
A
= 70°C
P
DET
50
0
-60
-40
-20
0
20
40
60
Ta - Ambient Temperature - °C
80
100
Figure 10. Maximum collector current versus collector
voltage
I
CE
- Collector Current - mA
1000
100
10
1
.1
.1
1
10
V
CE
- Collector-Emitter Voltage - V
100
Rth = 500°C/W
Figure 14. Normalization factor for non-saturated
and saturated CTR
T
A
=85°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
1.5
1.0
NCTRce
0.5
NCTRce(sat)
T
A
= 100°C
0.0
.1
1
10
I
F
- LED Current - mA
100
ILD/Q615
25°C
50°C
75°C
90°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–196
March 9, 2000-20
Figure 15. Collector-emitter current versus temperature
and LED current
35
Figure 18. -2, -3 Propagation delay versus collector
load resistor
t
pLH
- Propagation Low-High -
µs
2.5
T
A
= 25°C, I
F
= 10 mA
V
CC
= 5 V, Vth = 1.5 V
100
t
pLH
10
1.5
2.0
t
pHL
- Propagation High-Low -
µs
2.5
T
A
= 25°C, I
F
= 10 mA
V
CC
= 5 V, Vth = 1.5 V
100
t
pLH
10
t
pHL
1
.1
1
10
100
R
L
- Collector Load Resistor - KΩ
1.0
1.5
2.0
t
pHL
- Propagation High-Low -
µs
ILD/Q615
2–197
March 9, 2000-20
1000
Ice - Collector Current - mA
30
25
20
15
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
25°C
85°C
70°C
50°C
t
pHL
1
.1
1
10
100
R
L
- Collector Load Resistor - KΩ
1.0
Figure 16. Collector-emitter leakage versus
temperature
I
CEO
- Collector-Emitter - nA
10
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
-2
-20
0
20
40
60
80
100
Typical
V
CE
= 10 V
Figure 19. -4 Propagation delay versus collector
load resistor
t
pLH
- Propagation Low-High -
µs
1000
T
A
- Ambient Temperature -
°C
Figure 17. -1 Propagation delay versus collector load
resistor
t
pLH
- Propagation Low-High -
µs
T
A
= 25°C, I
F
= 10 mA
V
CC
= 5 V, Vth = 1.5 V
100
t
pLH
10
t
pHL
1.5
1
.1
1
10
100
R
L
- Load Resistor - KΩ
1.0
t
pHL
- Propagation High-Low -
µs
1000
4.0
3.5
3.0
2.5
2.0
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
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