IL66/ILD66/ILQ66
Vishay Semiconductors
Optocoupler, Photodarlington Output,
with Internal RBE (Single, Dual, Quad Channel)
Single Channel
A 1
C 2
NC
3
6
B
5
C
4
E
FEATURES
• Internal RBE for high stability
• Four available CTR categories per package
type
• BV
CEO
> 60 V
• Standard DIP packages
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Dual Channel
A
1
C
2
C
3
A
4
8
7
6
5
E
C
C
E
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• BSI IEC 60950 IEC 60065
Quad Channel
A
1
C
2
16
15
14
13
12
11
10
9
E
C
C
E
E
C
C
E
C
3
A
A
C
C
A
i179014
4
5
6
7
8
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isolators
employing gallium arsenide infrared emitters and silicon
photodarlington detectors. Switching can be accomplished
while maintaining a high degree of isolation between driving
and load circuits, with no crosstalk between channels.
ORDER INFORMATION
PART
IL66-1
IL66-2
IL66-3
IL66-4
ILD66-1
ILD66-2
ILD66-3
ILD66-4
ILQ66-1
ILQ66-2
ILQ66-3
ILQ66-4
Document Number: 83638
Rev. 1.6, 13-Dec-07
REMARKS
CTR
≥
100 %, DIP-6
CTR
≥
300 %, DIP-6
CTR
≥
400 %, DIP-6
CTR
≥
500 %, DIP-6
CTR
≥
100 %, DIP-8
CTR
≥
300 %, DIP-8
CTR
≥
400 %, DIP-8
CTR
≥
500 %, DIP-8
CTR
≥
100 %, DIP-16
CTR
≥
300 %, DIP-16
CTR
≥
400 %, DIP-16
CTR
≥
500 %, DIP-16
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
1
IL66/ILD66/ILQ66
Vishay Semiconductors
ORDER INFORMATION
PART
IL66-4X009
ILD66-2X007
ILD66-3X009
ILD66-4X009
ILQ66-4X007
ILQ66-4X009
Note
For additional information on the available options refer to option information.
REMARKS
CTR
≥
500 %, SMD-8 (option 9)
CTR
≥
300 %, SMD-8 (option 7)
CTR
≥
400 %, SMD-8 (option 9)
CTR
≥
500 %, SMD-8 (option 9)
CTR
≥
500 %, SMD-16 (option 7)
CTR
≥
500 %, SMD-16 (option 9)
Optocoupler, Photodarlington Output,
with Internal RBE (Single, Dual, Quad
Channel)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
Total package power dissipation
t = 1.0 s
IL66
ILD66
ILQ66
IL66
ILD66
ILQ66
V
RM
I
F
P
diss
6.0
60
100
1.33
150
2.0
5300
250
400
500
3.3
5.33
6.67
≥
7.0
≥
7.0
CTI
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
≥
175
≥
10
12
10
11
- 55 to + 125
- 55 to + 100
10
Ω
Ω
°C
°C
s
V
mA
mW
mW/°C
mW
mW/°C
V
RMS
mW
mW
mW
mW/°C
mW/°C
mW/°C
mm
mm
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
P
diss
V
ISO
P
tot
P
tot
P
tot
Derate linearly from 25 °C
Creepage distance
Clearance distance
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Lead soldering time at 260 °C
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
I
F
= 20 mA
V
R
= 6.0 V
V
R
= 0 V
V
F
I
R
C
O
1.25
0.1
25
1.5
10
V
µA
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
www.vishay.com
2
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83638
Rev. 1.6, 13-Dec-07
IL66/ILD66/ILQ66
Optocoupler, Photodarlington Output,
with Internal RBE (Single, Dual, Quad
Channel)
ELECTRICAL CHARACTERISTICS
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Collector base breakdown voltage (IL66)
Collector emitter leakage current
Capacitance collector emitter
COUPLER
Saturation voltage, collector emitter
I
C
= 10 mA, I
F
= 10 mA
V
CEsat
0.9
1.0
V
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
I
C
= 1.0 mA, I
F
= 0 A
I
C
= 10
μA
V
CE
= 50 V, I
F
= 0 A
V
CE
= 10 V
BV
CEO
BV
CBO
I
CEO
60
60
1.0
3.4
100
V
V
nA
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= 2.0 mA, V
CE
= 10 V
Current transfer ratio
I
F
= 0.7 mA, V
CE
= 10 V
I
F
= 2.0 mA, V
CE
= 5.0 V
PART
IL(D,Q)66-1
IL(D,Q)66-2
IL(D,Q)66-3
IL(D,Q)66-4
SYMBOL
CTR
CTR
CTR
CTR
MIN.
100
300
400
500
TYP.
400
500
500
750
MAX.
UNIT
%
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
NON SATURATED
Rise time -1, -2, -4
Fall time -1, -2, -4
Rise time -3
Fall time -3
V
CC
= 10 V
I
F
= 2.0 mA, R
L
= 100
Ω
I
F
= 0.7 mA
V
CC
= 10 V, R
L
= 100
Ω
t
r
t
f
t
r
t
f
200
200
200
200
µs
µs
µs
µs
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
1.4
2.0
NCTRce
-
Normalized
CTRce
V
F
- Forward
Voltage
(V)
1.3
1.2
1.1
1.0
0.9
T
A
= - 55 °C
T
A
= 25 °C
1.5
Normalized
to:
V
CE
= 5
V
I
F
= 2 mA
V
CE
= 5
V
1.0
T
A
= 100 °C
0.8
0.7
0.1
1
10
100
0.5
V
CE
= 1
V
0.0
0.1
1
10
100
iil66_01
I
F
- Forward Current (mA)
iil66_02
I
F
- LED Current (mA)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Normalized Non-Saturated and Saturated CTR
CE
vs.
LED Current
Document Number: 83638
Rev. 1.6, 13-Dec-07
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
3
IL66/ILD66/ILQ66
Vishay Semiconductors
Optocoupler, Photodarlington Output,
with Internal RBE (Single, Dual, Quad
Channel)
10000
1.2
NCTRce
-
Normalized
CTRce
1.0
0.8
0.6
0.4
0.2
I
CE
- Collector-emitter
Current (mA)
Normalized
to:
V
CE
= 5
V
I
F
= 10 mA
1000
V
CE
= 1
V
100
10
1
0.1
0.01
V
CE
= 5
V
0.001
0.1
iil66_06
V
CE
= 5
V
V
CE
= 1
V
0.0
0.1
iil66_03
1
10
100
1000
0
10
100
1000
I
F
- LED Current (mA)
I
B
- Base Current (µs)
Fig. 3 - Normalized Non-Saturated and Saturated CTR
CE
vs.
LED Current
Fig. 6 - Collector Emitter Current vs. LED Current
10000
1000
V
CE
= 1
V
25000
20000
V
CE
= 5
V
15000
10000
5000
0
0.1
1
10
100
iil66_07
0.1
1
10
100
1000
I
CE
- Collector Emitter
Current (mA)
100
V
CE
= 5
V
10
1
0.1
0.01
h
FE
- Forward Gain
V
CE
= 1
V
0.001
iil66_04
I
F
- LED Current (mA)
I
B
- Base Current (µA)
Fig. 4 - Non-Saturated and Saturated Collector Emitter Current vs.
LED Current
Fig. 7 - Non-Saturated and Saturated h
FE
vs. LED Current
1000
50
t
pHL
- High/Low Propagation
Delay (µs)
I
cb
- Photocurrent (µa)
100
40
30
20
10
0
10 kΩ
V
CC
= 5
V
V
th
= 1.5
V
10
220
Ω
1
0.1
0.1
iil66_05
1
10
100
iil66_08
0
5
I
F
- LED Current (mA)
10
15
I
F
- LED Current (mA)
20
Fig. 5 - Collector Base Photocurrent vs. LED Current
Fig. 8 - High to Low Propagation Delay vs. Collector Load
Resistance and LED Current
www.vishay.com
4
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83638
Rev. 1.6, 13-Dec-07
IL66/ILD66/ILQ66
Optocoupler, Photodarlington Output,
with Internal RBE (Single, Dual, Quad
Channel)
Vishay Semiconductors
150
t
pLH
- Low / High Propagation
Delay -
µs
125
100
75
50
25
0
0
iil66_09
10 kΩ
2 kΩ
V
CC
= 5
V
V
th
= 1.5
V
220 kΩ
5
10
15
20
I
F
- LED Current (mA)
Fig. 9 - Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
I
F
V
O
t
D
t
R
t
PLH
V
th
= 1.5
V
t
PHL
t
S
t
F
iil66_10
Fig. 10 - Switching Waveform
V
CC
= 10
V
F = 10 kHz,
DF = 50
%
R
L
V
O
I
F
iil66_11
Fig. 11 - Switching Schematic
Document Number: 83638
Rev. 1.6, 13-Dec-07
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
5
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