ILD620/620GB
QUAD CHANNEL
ILQ620/620GB
DUAL CHANNEL
AC Input Phototransistor
Optocoupler
FEATURES
• Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
• Current Transfer Ratio (CTR) at
I
F
= ±5.0 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
• Saturated Current Transfer Ratio (CTR
SAT
)
at
I
F
= ±1.0 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
• High Collector-Emitter Voltage, BV
CEO
=70 V
• Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Isolation Test Voltage from Double Molded
Package
• Underwriters Lab File #E52744
•
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
pin one ID
4
.255 (6.48)
.268 (6.81)
5
6
7
8
3
2
1
K=Cathode
A/K 1
A/K 2
A/K 3
A/K 4
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10
°
3°–9°
.008 (.20)
.012 (.30)
K=Cathode
A/K 1
pin
one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12
13
14
15
16
A/K 2
A/K 3
A/K 4
A/K 5
A/K 6
A/K 7
A/K 8
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
.300 (7.62)
typ.
8 Collector
7 Emitter
6 Collector
5 Emitter
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
Maximum Ratings
(Each Channel)
Emitter
Forward Current .........................................±60 mA
Surge Current .............................................. ±1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25
°
C .................................. 1.3 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25
°
C.................................. 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 V
RMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25
°
C............................... 5.33 mW/
°
C
Package Dissipation, ILQ620/GB............. 500 mW
Derate from 25
°
C............................... 6.67 mW/
°
C
Creepage..................................................
≥
7.0 mm
Clearance ................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................
≥
10
11
Ω
Storage Temperature .................. –55
°
C to +150
°
C
Operating Temperature .............. –55
°
C to +100
°
C
Junction Temperature ................................... 100
°
C
Soldering Temperature
(2.0 mm from case bottom) ...................... 260
°
C
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
4°
.020(.51)
.035 (.89)
.100 (2.54)typ.
.018 (.46)
.022 (.56)
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototransistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 5300 V
RMS
.
The LED parameters and the linear CTR characteristics combined with the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low
I
F
guaranteed CTR
CE
sat
minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–198
March 9, 2000-20
Characteristics
Symbol
Emitter
Forward Voltage
Forward Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Collector-Emitter Leakage Current
Collector-Emitter Leakage Current
Thermal Resistance, Junction to Lead
Package Transfer Characteristics
Channel/Channel CTR Match
CTR Symmetry
Off-State Collector Current
ILD/Q620
Saturated Current Transfer Ratio
Current Transfer Ratio
Collector-Emitter Saturation Voltage
ILD/Q620GB
Saturated Current Transfer Ratio
Current Transfer Ratio (Collector-Emitter)
Collector-Emitter Saturation Voltage
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
Insulation Resistance
Channel to Channel Insulation
CMH
CML
—
—
—
—
—
500
5000
5000
0.01
0.8
10
12
—
—
—
—
—
—
—
V/µs
V/µs
pF
pF
Ω
VAC
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=0
mA
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=10 mA
—
V
I-O
=0 V, f=1.0 MHz
V
I-O
=500 V
—
CTR
CEsat
CTR
CE
30
100
—
—
200
—
—
600
0.4
%
%
V
CTR
CEsat
CTR
CE
—
50
—
60
80
—
—
600
0.4
%
%
V
CTRX/CTRY
I
CE(RATIO)
I
CE(OFF)
1 to 1
0.5
—
—
—
1.0
3 to 1
2.0
10
—
—
µ
A
Min.
1.0
—
—
—
—
—
—
—
Typ.
1.15
2.5
25
750
6.8
10
2.0
500
Max.
1.3
20
—
—
—
100
50
—
Unit
V
µ
A
pF
K/W
pF
nA
µ
A
K/W
Condition
V
F
I
F
C
O
R
THJL
C
CE
I
CEO
I
CEO
R
THJL
I
F
=
±
10 mA
V
R
=
±
0.7 V
V
F
=0 V, f=1.0 MHz
—
V
CE
=5.0 V, f=1.0 MHz
V
CE
=24 V
T
A
=85
°
C,
V
CE
=24 V
—
I
F
=
±
5.0 mA,
V
CE
=5.0 V
I
CE
(
I
F
=–5.0 mA)/I
CE
(
I
F
=+5.0 mA)
V
F
=±0.7 V,
V
CE
=24 V
I
F
=
±
1.0 mA,
V
CE
=0.4 V
I
F
=
±
5.0 mA,
V
CE
=5.0 V
I
F
=
±
8.0 mA, I
CE
=2.4 mA
I
F
=
±
1.0 mA,
V
CE
=0.4 V
I
F
=
±
5.0 mA,
V
CE
=5.0 V
I
F
=
±
1.0 mA, I
CE
=0.2 mA
V
CEsat
V
CEsat
C
CM
C
I-O
R
S
—
Switching Times
Figure 1. Non-saturated switching timing
I
F
=10 mA
V
CC
=5 V
V
O
R
L
=75
Ω
Figure 3. Non-saturated switching timing
I
F
F=10 KHz,
DF=50%
t
PHL
Figure 2. Saturated switching timing
F=10 KHz,
DF=50%
V
CC
=5 V
R
L
=1 KΩ
V
O
I
F
=10 mA
V
0
t
PLH
t
S
50%
t
F
t
off
t
D
t
R
t
on
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–199
ILD/Q620/GB
March 9, 2000-20
Figure 4. Saturated switching timing
I
F
Figure 5. LED forward current versus forward voltage
IF - LED Forward Current - mA
60
40
20
25°C
0
–55°C
-20
-40
-60
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
85°C
V
O
t
R
t
D
t
PLH
V
TH
=1.5 V
t
F
t
PHL
t
S
VF - LED Forward Voltage - V
Non-saturated
Characteristic
On Time
Rise Time
Off Time
Fall Time
Propagation H-L
Propagation L-H
Symbol
Typ.
3.0
20
2.3
2.0
1.1
2.5
Unit
µs
µs
µs
µs
µs
µs
Test
Condition
Figure 6. Collector-emitter leakage versus temperature
Iceo - Collector-Emitter - nA
10
10
10
10
10
10
5
4
3
2
1
0
t
ON
t
r
t
OFF
t
f
t
PHL
t
PLH
I
F
=±10 mA
V
CC
=5.0 V
R
L
=75
Ω
50% of V
PP
Vce = 10V
TYPICAL
10 -1
10 -2
-20
0
20
40
60
80
100
T
A
- Ambient Temperature -
°C
Saturated
Characteristic
On Time
Rise Time
Off Time
Fall Time
Propagation H-L
Propagation L-H
Symbol
Typ.
4.3
2.8
2.5
11
2.6
7.2
Unit
µs
µs
µs
µs
µs
µs
Test
Condition
t
r
t
OFF
t
f
t
PHL
t
PLH
V
CC
=5.0 V
R
L
=1.0 KΩ
V
TH
=1.5 V
IF - Maximum LED Current - mA
t
ON
I
F
=±10 mA
Figure 7. Maximum LED current versus ambient
temperature
120
100
80
60
40
20
0
--60
-40
-20
0
20
40
60
80
100
TJ (MAX)=100°C
Ta - Ambient Temperature -
°C
Figure 8. Maximum LED power dissipation
200
P
LED
- LED Power - mW
150
100
50
0
--60
-40
-20
0
20
40
60
80
100
Ta - Ambient Temperature -
°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–200
ILD/Q620/GB
March 9, 2000-20
Figure 9. Collector current versus diode forward
current
I
C
–Normalized Collector Current
100
Normalized to
50
I
F
=10 mA
V
CE
=5 V
T
A
=25°C
10
5.0
2.5
1.0
0.5
Figure 12. Normalization factor for non-saturated and
saturated CTR
T
A
=100°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
ILD/Q620GB
ILD/Q620
1.5
1.0
NCTRce
0.5
NCTRce(sat)
T
A
= 100°C
0.0
.1
1
10
I
F
- LED Current - mA
100
0.1
1
5
10
Forward Current–I
F
(mA)
20
Figure 10. Normalization factor for non-saturated and
saturated CTR
T
A
=50°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
1.0
NCTRce(sat)
T
A
= 50°C
0.0
.1
1
10
100
Figure 13. Peak LED current versus peak duration, Tau
If(pk) - Peak LED Current - mA
10000
Duty Factor
1000
.005
.01
.02
.05
.1
.2
.5
t
τ
DF = /t
τ
1.5
100
0.5
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
F
- LED Current - mA
t - LED Pulse Duration - s
Figure 11. Normalization factor for non-saturated and
saturated CTR
T
A
=70°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
Figure 14. Maximum detector power dissipation
200
- Detector Power - mW
P
DET
150
1.5
1.0
100
0.5
NCTRce(sat)
T
A
= 70°C
50
0.0
.1
1
10
I
F
- LED Current - mA
100
0
-60
-40
-20
0
20
40
60
80
Ta - Ambient Temperature - °C
100
Figure 15. Maximum collector current versus collector
voltage
I
CE
- Collector Current - mA
1000
100
10
1
.1
.1
1
10
100
V
CE
- Collector-Emitter Voltage - V
ILD/Q620/GB
2–201
March 9, 2000-20
Rth=500°C/W
25°C
50°C
75°C
90°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
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