IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection in
SOIC-8 Package, 110 °C Rated
FEATURES
A
1
K
2
NC
3
NC
4
i179002
8
7
6
5
NC
B
C
E
• Operating temperature from - 55 °C to + 110 °C
• High BV
CEO
, 70 V
• Isolation test voltage, 4000 V
RMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Lead (Pb)-free component
DESCRIPTION
The 110 °C IL1205AT/1206AT/1207AT/1208AT are optically
coupled pairs with a gallium arsenide infrared LED and a
silicon NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while maintaining
a high degree of electrical isolation between input and
output. This family comes in a standard SOIC-8 small outline
package for surface mounting which makes them ideally
suited for high density application with limited space. In
addition to eliminating through-hole requirements, this
package conforms to standards for surface mounted
devices.
A specified minimum and maximum CTR allows a narrow
tolerance in the electrical design of the adjacent circuits. The
high BV
CEO
of 70 V gives a higher safety margin compared
to the industry standard 30 V.
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• AC adapters
• PLCs
• Switch mode power supplies
• DC/DC converters
• Microprocessor I/O interfaces
• General impedance matching circuits
AGENCY APPROVALS
• UL1577 - file no. E52744 system code Y
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 available with option 1
ORDER INFORMATION
PART
IL1205AT
IL1206AT
IL1207AT
IL1208AT
REMARKS
CTR 40 to 80 %, SOIC-8
CTR 63 to 125 %, SOIC-8
CTR 100 to 200 %, SOIC-8
CTR 160 to 320 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Continuous forward current
Peak reverse voltage
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter voltage
Collector current
Power dissipation
Derate linearly from 25 °C
(1)
TEST CONDITION
SYMBOL
I
F
V
R
P
diss
VALUE
60
6.0
90
0.9
UNIT
mA
V
mW
mW/°C
V
mA
mA
mW
mW/°C
V
CE
I
C
t < 1.0 ms
I
C
P
diss
70
50
100
150
1.5
Document Number: 83549
Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
301
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
Operating temperature
Total package dissipation (LED and detector)
Storage temperature
Soldering temperature
(2)
(1)
TEST CONDITION
SYMBOL
V
ISO
T
amb
P
tot
T
stg
VALUE
4000
- 55 to + 110
240
- 55 to + 150
260
UNIT
V
RMS
°C
mW
°C
°C
max. 10 s, dip soldering distance
to seating plane
≥
1.5 mm
T
sld
Derate linearly from 25 °C
2.4
mW/°C
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC).
100
90
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70
80
90 100 110 120
70
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70
80
90 100 110 120
T
amb
(°C)
Output Power P
diss
(mW)
LED Power P
diss
(mW)
80
T
amb
(°C)
Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature
Fig. 2 - Output Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter leakage current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown current
Saturation voltage, collector emitter
COUPLER
IL1205AT
IL1206AT
IL1207AT
IL1208AT
IL1205AT
IL1206AT
IL1207AT
IL1208AT
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
C
IO
40
63
100
100
13
22
34
56
80
125
200
320
25
40
60
95
0.5
%
%
%
%
%
%
%
%
pF
TEST CONDITION
I
F
= 10 mA
V
R
= 6 V
V
R
= 0 V
V
CE
= 10 V
I
C
= 100 µA
I
E
= 100 µA
I
C
= 2 mA, I
F
= 10 mA
PART
SYMBOL
V
F
I
R
C
I
I
CEO
BV
CEO
BV
ECO
BV
CBO
V
CEsat
MIN.
TYP.
1.3
0.1
13
5.0
70
7.0
70
10
0.4
MAX.
1.5
100
UNIT
V
µA
pF
nA
V
V
V
V
50
I
F
= 10 mA, V
CE
= 5.0 V
DC current transfer ratio
I
F
= 1.0 mA, V
CE
= 5.0 V
Capacitance (input to output)
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
302
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83549
Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Optocoupler, Phototransistor Output,
Vishay Semiconductors
with Base Connection in SOIC-8
Package, 110 °C Rated
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Turn-off time
TEST CONDITION
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
SYMBOL
t
on
t
off
MIN.
TYP.
3.0
3.0
MAX.
UNIT
µs
µs
Input
V
CC
= 5
V
Input
t
pdon
R
L
Output
V
OUT
10
%
50
%
90
%
t
on
t
pdoff
t
d
t
r
t
s
t
off
t
r
10
%
50
%
90
%
i205at_11
Fig. 3 Switching Test Circuit
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Pollution degree (DIN VDE 0109)
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1, group
IIIa per DIN VDE 6110 175 399
V
IOTM
V
IORM
Resistance (input to output)
P
SI
I
SI
T
SI
Creepage distance
Clearance distance
4.0
4.0
CTI
V
IOTM
V
IORM
R
IO
175
6000
560
10
12
350
150
165
TEST CONDITION
SYMBOL
MIN.
TYP.
55/110/21
2.0
399
V
V
Ω
mW
mA
°C
mm
mm
MAX.
UNIT
Note
As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
Document Number: 83549
Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
303
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
1.5
1.4
Forward
Voltage V
F
(V)
30
I
F
= 25 mA
25
+ 110 °C
- 55 °C + 25 °C + 50 °C
0 °C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
1.0
Collector Current (mA)
20
15
10
I
F
= 5 mA
I
F
= 10 mA
5
0
0.0
I
F
= 1 mA I
F
= 2 mA
10.0
I
F
(mA)
100.0
0.1
0.2
0.3
0.4
0.5
V
CE
(V)
Fig. 4 - Diode Forward Voltage V
F
vs. Forward Current
Fig. 7 - I
C
(Saturated) vs. V
CE
50
45
Collector Current (mA)
40
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9 10
V
CE
(V)
I
F
= 5 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 30 mA
1.2
1.1
1.0
I
F
= 5 mA
I
F
= 10 mA
Normalized
CTR
35
I
F
= 20 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 1 mA
Normalized
to I
F
= 10 mA
T
amb
= 25 °C
- 55 - 40 - 25 - 10 5 20 35 50 65
80
95 110 125
T
amb
(°C)
Fig. 5 - I
C
(Unsaturated) vs. V
CE
Fig. 8 - CTR Normalized to I
F
= 10 mA vs. Ambient Temperature,
(Saturated, V
CE
= 0.4 V)
Collector to Emitter Leakage Current
I
CE0
(nA)
100000
10000
1000
100
10
1
0.1
0.01
0.001
12
V
24
V
40
V
1.2
1.1
1.0
I
F
= 10 mA
I
F
= 5 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
- 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125
Normalized CTR
I
F
= 1 mA
0.0001
- 55 - 40 - 25 - 10 5 20 35 50 65
80
95 110 125
Normalized to I
F
= 10 mA
T
amb
= 25 °C
0.00001
T
amb
(°C)
T
amb
(°C)
Fig. 6 - Collector to Emitter Current vs. Ambient Temperature
Fig. 9 - CTR Normalized to I
F
= 10 mA vs. Ambient Temperature,
(Non-Saturated, V
CE
= 5 V)
Document Number: 83549
Rev. 1.7, 08-May-08
www.vishay.com
304
For technical questions, contact: optocoupler.answers@vishay.com
IL1205AT/1206AT/1207AT/1208AT
Optocoupler, Phototransistor Output,
Vishay Semiconductors
with Base Connection in SOIC-8
Package, 110 °C Rated
300
250
IL1208
200
1.4
1.2
IL1208
1.0
IL1207
IL1205
CTR (%)
150
100
50
IL1207
IL1206
CTR
0.8
0.6
0.4
IL1206
IL1205
0
0.1
1.0
10.0
0.2
0.0
0.1
1.0
10.0
100.0
I
F
(mA)
I
F
(mA)
Fig. 10 - CTR vs. I
F
, (V
CE
= 5 V, T
amb
= 25 °C) (Not Normalised)
Fig. 13 - CTR vs. I
F
Saturated, Normalised to I
F
= 10 mA,
T
amb
= 25 °C
1.2
IL1206
1.2
1.0
0.8
IL1208
IL1205
IL1207
1.1
+ 25 °C
+ 50 °C + 110 °C
0 °C
Normalized
h
FE
1.0
0.9
0.8
CTR
- 55 °C
0.6
0.4
0.2
0.0
0.1
V
CE
= 5
V
0.7
0.6
1.0
10.0
100.0
0.5
0.01
0.1
1
10
100
I
F
( m A)
Base Current (µA)
Fig. 11 - CTR vs. I
F
, (V
CE
= 5 V, T
amb
= 25 °C) Normalised to
I
F
= 10 mA, T
amb
= 25 °C
Fig. 14 - Normalized h
FE
vs. Base Current and T
amb
(Non-Saturated Condition)
250
1.5
1.4
+ 110 °C
+ 25 °C 0 °C
+ 50 °C
200
1.3
IL1208
Normalized
h
FE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
CE
= 0.4
V
CTR (%)
150
IL1207
IL1206
100
- 55 °C
50
IL1205
0
0.1
1.0
10.0
100.0
0.5
0.01
0.1
1
10
100
I
F
(mA)
Base Current (µA)
Fig. 12 - CTR vs. I
F
Saturated, (V
CE
= 0.4 V, T
amb
= 25 °C)
Fig. 15 - Normalized h
FE
vs. Base Current and T
amb
(Saturated Condition)
Document Number: 83549
Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
305
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