D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
CAT28F512
512K-Bit CMOS Flash Memory
Licensed Intel second source
FEATURES
I
Fast Read Access Time: 90/120/150 ns
I
Low Power CMOS Dissipation:
H
LOGEN
FR
A
EE
LE
A
D
F
R
E
E
TM
I
Commercial, Industrial and Automotive
Temperature Ranges
I
Stop Timer for Program/Erase
I
On-Chip Address and Data Latches
I
JEDEC Standard Pinouts:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
µ
A max (CMOS levels)
I
High Speed Programming:
–10
µ
s per byte
–1 Sec Typ Chip Program
I
12.0V
±
5% Programming and Erase Voltage
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
I
100,000 Program/Erase Cycles
I
10 Year Data Retention
I
"Green" Package Options Available
I
Electronic Signature
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
BLOCK DIAGRAM
I/O0–I/O7
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
524,288 BIT
MEMORY
ARRAY
A0–A15
X-DECODER
VOLTAGE VERIFY
SWITCH
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1084, Rev. H
CAT28F512
PIN CONFIGURATION
PIN FUNCTIONS
Pin Name
A
0
–A
15
Type
Input
I/O
Input
Input
Input
Function
Address Inputs for
memory addressing
Data Input/Output
Chip Enable
Output Enable
Write Enable
Voltage Supply
Ground
Program/Erase
Voltage Supply
DIP Package (P, L)
PLCC Package (N, G)
I/O
0
–I/O
7
VPP
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
N/C
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
28F512 F01
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
VPP
VCC
WE
N/C
A12
A15
NC
CE
OE
29
28
27
26
25
24
23
22
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
5
6
7
8
9
10
11
12
3
2
1 32 31 30
WE
V
CC
V
SS
V
PP
13
21
14 15 16 17 18 19 20
I/O1
I/O2
VSS
I/O3
I/O4
TSOP Package (Standard Pinout 8mm x 20mm) (T, H)
A11
A9
A8
A13
A14
NC
WE
VCC
VPP
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
TSOP Package (Reverse Pinout) (TR, HR)
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
VPP
NC
A15
A12
A7
A6
A5
A4
28F512 F03
I/O5
I/O6
Doc. No. 1084, Rev. H
2
CAT28F512
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................... –55°C to +95°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(1)
........... –2.0V to +V
CC
+ 2.0V
Voltage on Pin A
9
with
Respect to Ground
(1)
................... –2.0V to +13.5V
V
PP
with Respect to Ground
during Program/Erase
(1)
.............. –2.0V to +14.0V
V
CC
with Respect to Ground
(1)
............ –2.0V to +7.0V
Package Power Dissipation
Capability (T
A
= 25°C) .................................. 1.0 W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
100K
10
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz
Limits
Symbol
C
IN(3)
C
OUT(3)
C
VPP(3)
Test
Input Pin Capacitance
Output Pin Capacitance
V
PP
Supply Capacitance
Min
Max.
6
10
25
Units
pF
pF
pF
Conditions
V
IN
= 0V
V
OUT
= 0V
V
PP
= 0V
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+ 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
3
Doc. No. 1084, Rev. H
CAT28F512
D.C. OPERATING CHARACTERISTICS
V
CC
= +5V
±10%,
unless otherwise specified.
Limits
Symbol
I
LI
I
LO
I
SB1
I
SB2
I
CC1
I
CC2(1)
I
CC3(1)
I
CC4(1)
I
PPS
I
PP1
I
PP2(1)
I
PP3(1)
I
PP4(1)
V
IL
V
ILC
V
OL
V
IH
V
IHC
V
OH1
V
OH2
V
ID
I
ID(1)
V
LO
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Standby Current CMOS
V
CC
Standby Current TTL
V
CC
Active Read Current
V
CC
Programming Current
V
CC
Erase Current
V
CC
Prog./Erase Verify Current
V
PP
Standby Current
V
PP
Read Current
V
PP
Programming Current
V
PP
Erase Current
V
PP
Prog./Erase Verify Current
Input Low Level TTL
Input Low Level CMOS
Output Low Level
Input High Level TTL
Input High Level CMOS
Output High Level TTL
Output High Level CMOS
A
9
Signature Voltage
A
9
Signature Current
V
CC
Erase/Prog. Lockout Voltage
2.5
2
V
CC
*0.7
2.4
V
CC
–0.4
11.4
13
200
–0.5
–0.5
Min.
Max.
±1
±1
100
1
30
15
15
15
±10
200
30
30
5
0.8
0.8
0.45
V
CC
+0.5
V
CC
+0.5
Unit
µA
µA
µA
mA
mA
mA
mA
mA
µA
µA
mA
mA
mA
V
V
V
V
V
V
V
V
µA
V
I
OH
= –2.5mA, V
CC
= 4.5V
I
OH
= –400µA, V
CC
= 4.5V
A
9
= V
ID
A
9
= V
ID
I
OL
= 5.8mA, V
CC
= 4.5V
Test Conditions
V
IN
= V
CC
or V
SS
V
CC
= 5.5V,
OE
= V
IH
V
OUT
= V
CC
or V
SS
,
V
CC
= 5.5V,
OE
= V
IH
CE
= V
CC
±0.5V,
V
CC
= 5.5V
CE
= V
IH
, V
CC
= 5.5V
V
CC
= 5.5V,
CE
= V
IL
,
I
OUT
= 0mA, f = 6 MHz
V
CC
= 5.5V,
Programming in Progress
V
CC
= 5.5V,
Erasure in Progress
V
CC
= 5.5V, Program or
Erase Verify in Progress
V
PP
= V
PPL
V
PP
= V
PPH
V
PP
= V
PPH
,
Programming in Progress
V
PP
= V
PPH
,
Erasure in Progress
V
PP
= V
PPH
, Program or
Erase Verify in Progress
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 1084, Rev. H
4
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
