Red, Green, Blue (RGB) SiPMs
Silicon photomultipliers (SiPMs) from First Sensor are
innovative solid-state silicon detectors with single photon
sensitivity. SiPMs are a valid alternative to photomultiplier
tubes. The main benefits of these detectors are high gain,
extremely good timing performance and low operating
voltage. They are insensitive to magnetic field and have a
high integration level. The detectors are optimized for red,
green and blue (RGB) light detection.
Features
– RGB light detection from 350 to 900 nm
(peak efficiency at 550 nm)
– Low noise
– Superior breakdown voltage uniformity
– Excellent temperature stability
– Detection of extremely faint light
– Very high gain (10
6
)
– Extremely good timing performance
– Insensitive to magnetic fields
– Not damaged by ambient light
– Small and compact
– Nickel free Chip Scale Package (CSP)
Applications
–
–
–
–
–
High energy physics
Medical imaging
Nuclear medicine
Homeland security
Analytical instruments
Certificates
– RoHS compliant (2011/65/EU)
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Red, Green, Blue (RGB) SiPMs
Absolute maximum ratings
(1)
Parameter
Operating temperature (T
A
)
Storage temperature (T
S
)
Lead temperature (solder) 5 s (T
Sol
)
Voltage working range (MVW)
Min.
-25
-40
Max.
+40
+60
+250
Breakdown voltage +4
Unit
°C
°C
°C
V
Typical characteristics
Parameter
SiPM-RGB1S-SMD
Effective active area
Cell count
Cell size (pitch)
Cell fill-factor
Quenching resistance
Cell capacitance
Recharge time constant
Spectral response range
Peak sensitivity wavelength
Photon detection efficiency
(2)
Breakdown voltage (BV)
BV standard deviation
(3)
Recommended overvoltage range (OV)
(4)
Dark count rate
(5)
Gain
(6)
Breakdown voltage temperature coefficient
Refractive index of epoxy resin
(7)
Spectral transmission of epoxy resin
(7)
(1×1) mm
2
625
40
μm
× 40
μm
60 %
550 kΩ
90 fF
50 ns
350 ... 900 nm
550 nm
32.5 %
typ. 27 V, min. 25 V, max. 29 V
50 mV
min: 2 V, max: 4 V
<100 kHz/mm
2
@ 2 V OV, <200 kHz/mm
2
@ 4 V OV
2.7×10
6
27 mV/°C
1.5115 (@ 589 nm, 23 °C, uncured)
>97% @ 1000 ... 1600 nm ; >99% @ 400 ... 1000 nm
SiPM-RGB1C-SMD
1.13 mm
2
673
Product
SiPM-RGB3S-SMD
(3×3) mm
2
5520
SiPM-RGB4S-SMD
(4×4) mm
2
9340
Specification notes
Stresses beyond those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated
in the operational sections of the specifications is not implied. Exposure to
absolute maximum rated conditions for extended periods may affect device
reliability.
(2) Measured at peak sensitivity wavelength (λ=λ
p
) at +4 V overvoltage (not
including afterpulse and crosstalk).
(1)
(3) BV of SiPMs belonging to a same production lot are within 200 mV (±2σ) from
mean BV value.
(4) Operating voltage (SiPM bias) is BV+OV, to be applied in reverse mode, i.e.
V
AK
<0 (see “Pins Function” section).
(5) 0.5 p.e. threshold level at 20 °C (primary dark count rate; not including afterpulse).
(6) Measured at 20 °C at +4 V overvoltage.
(7) To be used as a guide only, not as a specification. Reported data is not guaranteed.
Version 16-02-18
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Red, Green, Blue (RGB) SiPMs
Device characteristics
(8, 9)
Typical reverse IV curve
(SiPM-RGB1S-SMD)
Typical forward IV curve
(SiPM-RGB1S-SMD)
Dark current [A]
Current [mA]
Reverse bias [V]
Forward bias [V]
Breakdown voltage temperature dependence
Dark count rate as fct of overvoltage and temperature
(0.5 p.e. threshold level; primary dark count rate; not including afterpulse)
Breakdown voltage [V]
Dark count rate [cps/mm
2
]
Temperature [°C]
Overvoltage [V]
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Red, Green, Blue (RGB) SiPMs
Device characteristics (cont.)
(8, 9)
Gain as fct of overvoltage
=
=
=
Gain variation [1/°C]
Overvoltage [V]
Relative variation of gain with temperature
as fct of overvoltage
=
=
Gain
=
=
=
=
=
Overvoltage [V]
Temperature dependence of poly-silicon
quenching resistance
=
=
Quenching resistance [kΩ]
Photo detection efficiency (PDE) as fct of wavelength
(crosstalk and afterpulse not included)
=
=
=
=
=
Temperature [°C]
Wavelength [nm]
PDE
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Red, Green, Blue (RGB) SiPMs
Device characteristics (cont.)
(8, 9)
Correlated noise probability as fct of overvoltage
(delayed correlated noise includes delayed crosstalk and afterpulse)
=
=
=
=
=
Probability
Normalized amplitude [a.u.]
SiPMRGB1SSMD
Pulse shape at different overvoltage
(recharge time constant is 50 ns)
=
=
=
=
=
=
Overvoltage [V]
Time [ns]
Specification notes
(8) T
A
= 20 °C
(9) Refer to the data accompanying each shipped product for more detailed
information.
Version 16-02-18
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