Near Ultraviolet (NUV) SiPMs
Silicon photomultipliers (SiPMs) from First Sensor are
innovative solid-state silicon detectors with single photon
sensitivity. SiPMs are a valid alternative to photomultiplier
tubes. The main benefits of these detectors are high gain,
extremely good timing performance and low operating
voltage. They are insensitive to magnetic field and have
a high integration level. The detectors are optimized for
Near Ultraviolet (NUV) light detection.
Features
– NUV light detection from 350 to 900 nm
(peak efficiency at 420 nm)
– Afterpulsing probability <4 %
– Dark Count Rate <100 kHz/mm
2
– Superior breakdown voltage uniformity
– Excellent temperature stability
– Detection of extremely faint light
– Very high gain (10
6
)
– Extremely good timing performance
– Insensitive to magnetic fields
– Not damaged by ambient light
– Small and compact
– Nickel free Chip Scale Package (CSP)
Applications
–
–
–
–
–
High energy physics
Medical imaging
Nuclear medicine
Homeland security
Analytical instruments
Certificates
– RoHS compliant (2011/65/EU)
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Near Ultraviolet (NUV) SiPMs
Absolute maximum ratings
(1)
Parameter
Operating temperature (T
A
)
Storage temperature (T
S
)
Lead temperature (solder) 5 s (T
Sol
)
Voltage working range (MVW)
Min.
-25
-40
Max.
+40
+60
+250
Breakdown voltage +6
Unit
°C
°C
°C
V
Typical characteristics
Parameter
SiPM-NUV1S-SMD
Effective active area
Cell count
Cell size (pitch)
Cell fill-factor
Quenching resistance
Cell capacitance
Recharge time constant
Spectral response range
Peak sensitivity wavelength
Photon detection efficiency
(2)
Breakdown voltage (BV)
BV standard deviation
(3)
Recommended overvoltage range (OV)
(4)
Dark count rate
(5)
Gain
(6)
Breakdown voltage temperature coefficient
Refractive index of epoxy resin
(7)
Spectral transmission of epoxy resin
(7)
(1×1) mm
2
625
40
μm
× 40
μm
60 %
800 kΩ
90 fF
70 ns
350 ... 900 nm
420 nm
43 %
typ. 26 V, min. 24 V, max. 28 V
50 mV
min: 2 V, max: 6 V
<50 kHz/mm
2
@ 2 V OV, <100 kHz/mm
2
@ 6 V OV
3.6×10
6
26 mV/°C
1.5115 (@ 589 nm, 23 °C, uncured)
>97% @ 1000 ... 1600 nm ; >99% @ 400 ... 1000 nm
SiPM-NUV1C-SMD
1.13 mm
2
673
Product
SiPM-NUV3S-SMD
(3×3) mm
2
5520
SiPM-NUV4S-SMD
(4×4) mm
2
9340
Specification notes
Stresses beyond those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated
in the operational sections of the specifications is not implied. Exposure to
absolute maximum rated conditions for extended periods may affect device
reliability.
(2) Measured at peak sensitivity wavelength (λ=λ
p
) at +6 V overvoltage (not
including afterpulse and crosstalk).
(1)
(3) BV of SiPMs belonging to a same production lot are within 200 mV (±2σ) from
mean BV value.
(4) Operating voltage (SiPM bias) is BV+OV, to be applied in reverse mode, i.e.
V
AK
<0 (see “Pins Function” section).
(5) 0.5 p.e. threshold level at 20 °C (primary dark count rate; not including afterpulse).
(6) Measured at 20 °C at +6 V overvoltage.
(7) To be used as a guide only, not as a specification. Reported data is not guaranteed.
Version 16-02-18
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Near Ultraviolet (NUV) SiPMs
Device characteristics
(8, 9)
Typical reverse IV curve
(SiPM-NUV1S-SMD)
Typical forward IV curve
(SiPM-NUV1S-SMD)
Dark current [A]
Current [mA]
Reverse bias [V]
Forward bias [V]
Breakdown voltage temperature dependence
Dark count rate as fct of overvoltage and temperature
Breakdown voltage [V]
Dark count rate [cps/mm
2
]
Temperature [°C]
Overvoltage [V]
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Near Ultraviolet (NUV) SiPMs
Device characteristics (cont.)
(8, 9)
Gain as fct of overvoltage
Relative variation of gain with temperature
as fct of overvoltage
Overvoltage [V]
Gain variation [1/°C]
Gain [x 10
6
]
Overvoltage [V]
Temperature dependence of poly-silicon
quenching resistance
Photo detection efficiency (PDE) as fct of wavelength
(crosstalk and afterpulse not included)
Quenching resistance [kΩ]
PDE
Temperature [°C]
Wavelength [nm]
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Near Ultraviolet (NUV) SiPMs
Device characteristics (cont.)
(8, 9)
Delayed correlated noise probability
(delayed crosstalk and afterpulse)
Pulse shape at different overvoltage
(recharge time constant is 70 ns)
SiPMNUV1SSMD
Delayed correlated noise probability
Normalized amplitude [a.u.]
Overvoltage [V]
Time [ns]
Specification notes
(8) T
A
= 20 °C
(9) Refer to the data accompanying each shipped product for more detailed
information.
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