HMMC-5200
DC–20 GHz HBT Series–Shunt Amplifier
Data Sheet
Description
The HMMC-5200 is a DC to 20 GHz, 9.5 dB gain, feedback
amplifier designed to be used as a cascadable gain block
for a variety of applications. The device consists of a
modified Darlington feedback pair which reduces the
sensitivity to process variations and provides 50 ohm
input/output port matches. Furthermore, this amplifier is
fabricated using MWTC’s Heterojunction Bipolar Transis-
tor (HBT) process which provides excellent process uni-
formity, reliability and 1/f noise performance. The device
requires a single positive supply voltage and generally
operates Class–A for good distortion performance.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
40 * 460mm (6. x 8. mils)
± 0
mm
(± 0.4 mils)
27 ± 5
mm
(5.0 ± 0.6 mils)
70 * 70
mm
(2.8 x 2.8 mils), or larger
Features
•
High Bandwidth, F-1dB:
21 GHz Typical
•
Moderate Gain:
9.5 dB ±1 dB @ 1.5 GHz
•
P-1dB @ 1.5 GHz: 12.5 dBm Typical
•
Low l/f Noise Corner:
<20 kHz Typical
•
Single Supply Operation
>4.75 volts @ 44 mA Typ.
•
Low Power Dissipation:
190 mW Typ. for chip
Symbol
VCC
VPAD
Pin
TJ
Top
Tst
Tmax
Notes:
Parameters/Conditions
VDC Pad Voltage
Output Pad Voltage
RF Input Power, Continuous
Junction Temperature
Operating Temperature
Storage Temperature
Max. Assembly Temperature
Min.
Max.
8.0
3.5
+6
+50
Units
Volts
Volts
dBm
°C
°C
°C
°C
-55
-65
+85
+65
+300
DC Specifications/Physical Properties
(Typicals are for VCC = + 5V, Rout = 64W)
Symbol
VCC
IC
IC2
IC+IC2
qJ-bs
Parameters/Conditions
Supply Voltage
Stage–One Supply Current
Stage–Two Supply Current
Total Supply Current
Thermal Resistance[]
(Junction–to–Backside at TJ = 50°C)
340
°
Min.
4.75
4.5
26
Typ.
6.0
7
29
46
20
32
Max.
Units
Volts
mA
mA
mA
Notes:
1. Backside ambient operating temperature TA = Top = 25°C unless otherwise noted.
2. Thermal resistance (in °C/Watt) at a junction temperature T(°C) can be estimated using the equation:
θ(T) ≅ θ(TJ) [T(°C)+273] / [TJ(°C)+273] where θ (TJ=150°C) = θJ-bs.
RF Specifications
(TA = 25°C, VCC = + 5V, Rout = 64W 50Wsystem)
Symbol
BW
BW
S2
D
Gain
TC
(RLin)MIN
(RLout)MIN
Isolation
PfdB
Parameters/Conditions
Operating Bandwidth (f3db)
Operating Bandwidth (ffdb)
Small Signal Gain (@.5 GHz)
Small Signal Gain Flatness (DC–5 GHz)
Small Signal Gain Flatness (DC–20 GHz)
Temperature Coefficient of Gain (DC–3 GHz)
Temperature Coefficient of Gain (3–20 GHz)
Minimum Input Return Loss (DC–5 GHz)
Minimum Input Return Loss (5–20 GHz)
Minimum Output Return Loss
Reverse Isolation
Output Power at dB Gain Compression:
(@ .5 GHz)
(@ 5 GHz)
(@ 0 GHz)
(@ 5 GHz)
(@ 20 GHz)
PSAT
NF
Saturated Output Power (@ .5 GHz)
Noise Figure:
(@ GHz)
(@ 6 GHz)
(@ 0 GHz)
(@ 5 GHz)
(@ 6 GHz)
(@ 8 GHz)
6.5
6.8
7
7.5
8
8.5
2.5
2.5
.7
0.6
8.0
3
dBm
dB
8.5
Min.
20
2
9.7
± 0.2
*
0.004
0.02
-5
-2
-5
-5
0.5
Typ.
Max.
Units
GHz
GHz
dB
dB
dB
dB/°C
dB/°C
dB
dB
dB
dB
dBm
2
Applications
The HMMC-5200 can be used for a variety of applications
requiring moderate amounts of gain and low power dis-
sipation in a 50W system.
Assembly Techniques
It is recommended that the RF input and RF output con-
nections be made using 0.7 mil diameter gold wire. The
chip is designed to operate with 0.1–0.3 nH of inductance
at the RF input and output. This can be accomplished
by using 10 mil bond wire lengths on the RF input and
output. The bias supply wire can be a 0.7 mil diameter
gold wire attached to the VCC bonding pad.
GaAs MMICs are ESD sensitive. ESD preventive measures
must be employed in all aspects of storage, handling, and
assembly.
MMIC ESD precautions, handling considerations, die
attach and bonding methods are critical factors in suc-
cessful GaAs MMIC performance and reliability.
Agilent application note #54, “GaAs MMIC ESD, Die Attach
and Bonding Guidelines” provides basic information on
these subjects.
T
A
=25
o
C, V
CC
=+6V,
R
O UT
=100Ω
,
L
in/out
=0.17nH
[1]
Biasing and Operation
The HMMC-5200 can be operated from a single positive
supply. This supply must be connected to two points on
the chip, namely the VCC pad and the output pad. The
supply voltage may be directly connected to the VCC
pad as long as the voltage is between +4.75 to +7 volts;
however, if the supply is higher than +7 volts, a series
resistor (RCC) should be used to reduce the voltage to the
VCC pad. See the bonding diagram for the equation used
to select RCC. In the case of the output pad, the supply
voltage must be connected to the output transmission
line through a resistor and an inductor. The required value
of the resistor is given by the equation:
Rout = 35.7Vsupply -114.3W,
where Vsupply is in volts. If R
OUT
is greater than 300W,
the inductor may be omitted, however, the amplifier’s
gain may be reduced by ~0.5 dB. Figure 4 shows a recom-
mended bonding strategy.
12
10
0
5
S
21
, (dB)
The voltage at the IN and OUT pads of the IC will be ap-
proximately 3.2 volts; therefore, DC blocking caps should
be used at these ports.
Vcc
GND
In
GND
GND
Out
GND
6
4
2
0.10
S
12
15
20
25
Frequency (GHz)
13
26
Figure 2. Typical S21 and S12 Response
T
A
=25
o
C, V
CC
=+6V,
0
10
R
O UT
=100Ω
,
L
in/out
=0.17nH
[1]
0
10
S
11
S
11
, (dB)
Figure 1. Simplified Schematic Diagram
30
40
50
0.10
S
22
30
40
50
Frequency (GHz)
13
26
Figure 3. Typical S11 and S22 Response
3
S
2 2
, (dB)
20
S
12
, (dB)
20
The chip contains a backside via to provide a low induc-
tance ground path; therefore, the ground pads on the IC
should not be bonded.
8
S
21
10
S–Parameters (TA = 25°C, VCC = + 6V, ROUT = 100Lin/out=0.17nH)
Freq.
(GHz)
0.0
.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.0
.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
20.0
2.0
22.0
23.0
24.0
25.0
26.0
Notes:
S11
dB
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mag
0.030
0.033
0.037
0.043
0.052
0.058
0.063
0.070
0.074
0.074
0.076
0.076
0.075
0.072
0.069
0.07
0.075
0.09
0.09
0.34
0.6
0.90
0.220
0.250
0.28
0.33
0.343
ang
28.9
24.9
27.3
33.5
32.4
33.3
3.
27.
2.9
5.7
8.55
-
-
-
-
-
-
-
-
-
-
-
78.7
70.7
63.3
57.0
50.8
dB
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S12
mag
0.97
0.95
0.94
0.95
0.95
0.95
0.96
0.97
0.97
0.98
0.99
0.200
0.20
0.203
0.204
0.205
0.207
0.208
0.20
0.22
0.23
0.23
0.23
0.22
0.22
0.2
0.22
ang
0.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
9.5
9.5
9.5
9.5
9.6
9.7
9.8
9.9
0.0
0.
0.2
0.3
0.4
0.4
0.4
0.3
0.2
0.0
9.7
9.4
9.0
8.6
8.
7.6
7.
6.5
6.0
S21
mag
3.03
2.999
2.992
3.009
3.036
3.062
3.097
3.35
3.8
3.225
3.266
3.298
3.322
3.338
3.332
3.306
3.253
3.8
3.085
2.975
2.844
2.706
2.560
2.46
2.272
2.34
.997
ang
79.9
7.5
63.2
55.0
46.7
38.2
29.6
20.9
2.0
02.9
93.5
83.9
74.2
64.4
54.2
44.0
33.7
23.5
3.4
3.5
-
-
-
-
-
-
-
dB
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S22
mag
0.038
0.034
0.029
0.026
0.022
0.06
0.05
0.020
0.03
0.045
0.060
0.075
0.090
0.05
0.2
0.33
0.45
0.58
0.67
0.72
0.72
0.79
0.78
0.83
0.87
0.93
0.203
-
-
-
-
-
-
76.
64.4
54.2
47.9
4.
34.2
28.4
22.0
8.6
2.3
09.7
06.0
05.
04.0
03.0
04.9
05.7
06.8
ang
-
-
4
If 4.75V
½
V
supply
½
7V
R
CC
= 0
If V
supply
> 7V
R
CC
= [(V
supply
-6.5)*(1/0.01725)]
½
R
c c
5V
supply
R
out
=
[(V
supply
-3.2)*(1/0.028)]
½
R
out
L
c hoke†
RF INPUT
C
block
*
*
RF OUTPUT
C
bloc k
460
390
Note: For optimum performance,
the input and output bond wire
inductances should each be 0.1f−0.3 nH.
(bond wire has about 20 pH/mil
of inductance).
† Lchoke is optional if Rout is greater
than 300Ω, however, gain will be
reduced by about 0.5 dB.
Note: Blocking Cap required on Input and Output
240
90
0
0
70
175
340 410
Figure 5. Bonding Pad Positions
5
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