1N5555
1N5557
SCOTTSDALE DIVISION
1N5556
1N5558
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N5555 thru 1N5558
are JEDEC registered selections for unidirectional devices. All have the
same high Peak Pulse Power rating of 1500 W with extremely fast
response times. They are also available in military qualified selections as
described in the Features section herein. They are most often used for
protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in
lower surge levels of IEC61000-4-5. They are also very successful in
protecting airborne avionics and electrical systems. Since their response
time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
•
•
•
•
Unidirectional TVS series for thru-hole mounting
Working voltage (V
WM
) range 30.5 V to 175 V
Hermetic sealed DO-13 metal package
JAN/TX/TXV military qualifications also available per
MIL-PRF-19500/500 by adding the JAN, JANTX, or
JANTXV prefix, e.g. JANTXV1N5555, etc.
•
For bidirectional TVS in the same DO-13 package, see
separate data sheet for the 1N6036 – 1N6072A series
(also military qualified)
•
Surface mount equivalent packages also available
from the SMCJ5.0 - SMCJ170CA or SMCG5.0 –
SMCG170C series in separate data sheet (consult
factory for other surface mount options)
•
Plastic axial-leaded equivalents available from the
1N6267 – 1N6303A series in separate data sheet
APPLICATIONS / BENEFITS
•
Suppresses transients up to 1500 watts @ 10/1000
µs (see Figure 1)
•
Clamps transient in less than 100 pico seconds
•
Protection from switching transients and induced RF
•
Protection from ESD and EFT per IEC 61000-4-2
and IEC 61000-4-4
•
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: 1N5555 to 1N5558
Class 2 & 3: 1N5555 to 1N5557
Class 4: 1N5555 to 1N5556
•
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: 1N5555 to 1N5557
Class 2: 1N5555 to 1N5557
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
1500 Watts for 10/1000
µs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (see Figs 1, 2, & 4)
•
Operating & Storage Temperatures: -65
o
to +175
o
C
•
THERMAL RESISTANCE: 50
o
C/W junction to lead at
0.375 inches (10 mm) from body or 110
o
C/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1oz) and track width 1 mm, length 25 mm
•
DC Power Dissipation
*
: 1 Watt at T
L
= +25
o
C 3/8” (10
mm) from body (see derating in Fig 3)
•
Forward surge current: 200 Amps for 8.3ms half-sine
wave at T
A
= +25
o
C
•
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
•
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
•
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
•
POLARITY: Cathode connected to case and
polarity indicated by diode symbol
•
MARKING: Part number and polarity diode symbol
•
WEIGHT: 1.4 grams. (Approx)
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
See package dimension on last page
1N5555 thru 1N5558
5555 thru 1N5558
*
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5555
1N5557
SCOTTSDALE DIVISION
1N5556
1N5558
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS
JEDEC
Type
Number
Maximum
Temperature
Coefficient of V
(BR)
α
V(BR)
(Notes
@ 1.0 mA
1&2)
o
V
mA
V
V
V
A
%/ C
µA
1N5555
33.0
1.0
30.5
21.5
5
47.5
32
+.093
1N5556
43.7
1.0
40.3
28.5
5
63.5
24
+.094
1N5557
54.0
1.0
49.3
34.5
5
78.5
19
+.096
1N5558
191.0
1.0
175.0
124.0
5
265.0
5.7
+.100
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” V
WM
that should be equal to or greater than the dc or
continuous peak operating voltage level.
NOTE 2: Also available in military qualified types with a JAN, JANTX, or JANTXV prefix.
Minimum
Breakdown
Voltage
V
(BR)
@ I
(BR)
Test
Current
I
(BR)
Rated
Standoff
Voltage
V
WM
Maximum
(RMS)
Reverse
Voltage
V
WM(RMS)
Maximum
Standby
Current
I
D
@ V
WM
Maximum
Peak
Reverse
Voltage
V
C
@ I
PP
Maximum
Peak Pulse
Current
I
PP
Symbol
V
WM
V
(BR)
V
C
SYMBOLS & DEFINITIONS
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above.)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25
o
C
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the
peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise
due to both the series resistance and thermal rise and positive temperature coefficient (
α
V(BR)
)
Peak Pulse Current: The peak current during the impulse (See Figure 2)
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
Standby Current: The current at the standoff voltage (V
WM
)
Breakdown Current: The current used for measuring Breakdown Voltage (V
(BR)
)
I
PP
P
PP
I
D
I
(BR)
GRAPHS
100
Peak Pulse Power (P
PP
) in kW
Exponential wave-form
(See FIG. 2)
10
Pulse current (I
P
) in percent of I
PP
Peak Value
I
PP
Square-wave pulse
1.0
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of peak
value (I
PP
).
1N5555 thru 1N5558
5555 thru 1N5558
0.1Kw
100ns
1µs
10µs
100µs
1ms
10ms
Pulse Time (tp )
FIG. 1 –
Non-repetitive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
time (t) in milliseconds
FIG. 2
Pulse wave form for exponential surge
Copyright
2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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