5100 Series NAND Flash SSD
Features
5100 Series SATA NAND Flash SSD
MTFDDAK240T, MTFDDAK480T, MTFDDAK960T,
MTFDDAK1T9T, MTFDDAK3T8T, MTFDDAK7T6T
MTFDDAV240T, MTFDDAV480T, MTFDDAV960T,
MTFDDAV1T9T
Features
• Micron
®
3D TLC NAND Flash
• Three performance/endurance levels
– ECO
– PRO
– MAX
• TCG Enterprise compliant self-encrypting drive
(SED)
• SATA 6 Gb/s interface
• ATA modes supported
– PIO mode 3, 4
– Multiword DMA mode 0, 1, 2
– Ultra DMA mode 0, 1, 2, 3, 4, 5, 6
• 512-byte sector size support
• Hot-plug capable (2.5-inch only)
• Native command queuing support with 32-com-
mand slot support
• ATA-8 ACS-3 revision 5 command set compliant
• ATA security feature command set and password
login support
• Security erase command set: fast and secure erase
• Performance (steady state)
1
– Sequential 128KB read: Up to 540 MB/s
– Sequential 128KB write: Up to 520 MB/s
– Random 4KB read: Up to 93,000 IOPS
– Random 4KB write: Up to 74,000 IOPS
• Quality of Service
2
– Read/Write (99.9%): 500µs/500µs
– Read/Write (99.999%): 9ms/5ms
• Endurance
4
: Total bytes written (TBW)
– ECO: Up to 8,400TB
– PRO: Up to 17,600TB
– MAX: Up to 17,600TB
• Reliability
– MTTF: 3.0 million device hours
3
– Static and dynamic wear leveling
– Uncorrectable bit error rate (UBER): <1 sector
per 10
17
bits read
– End-to-end data protection
– Enhanced power-loss data protection with data
protection capacitor monitoring
• Self-monitoring, analysis, and reporting technology
(SMART) command set
• Capacity
4
(unformatted): 240GB, 480GB, 960GB,
1920GB, 3840GB, 7680GB
• Mechanical:
– 2.5-inch x 7.0mm form factor
– M.2 Type 2280 form factor
• RoHS-compliant package
• Secure field-upgradeable firmware with digitally
signed firmware image
• Power consumption: 240GB/480GB: <4.5W(TYP);
960GB: <5.0W(TYP); 1920GB: <5.5W(TYP); 3840GB/
7680GB: <6.0W(TYP)
• Operating temperature
– Commercial (0°C to 70°C)
5
Notes:
1. Performance varies by capacity and endur-
ance.
2. 4KB transfers QD = 1 used for READ/WRITE
latency values.
3. The product achieves a MTTF based on pop-
ulation statistics not relevant to individual
units.
4. 1GB = 1 billion bytes; formatted capacity is
less.
5. As reported by SMART.
Warranty:
Contact your Micron sales representative
for further information regarding the product,
including product warranties.
CCMTD-1725822587-10309
5100_series_SSD_disti.pdf - Rev. C 08/17 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
5100 Series NAND Flash SSD
Features
Part Numbering Information
Micron’s 5100 SSD is available in different configurations and densities. The chart below is a comprehensive list of
options for the 5100 series devices; not all options listed can be combined to define an offered product. Visit mi-
cron.com for a list of valid part numbers.
Figure 1: Part Number Chart
MT FD
Micron Technology
Product Family
FD = Flash drive
D
AK 480 T
BY - 1
AR
1
6
AB
YY
ES
Production Status
Blank = Production
ES = Engineering sample
Customer Designator
YY = Standard
Drive Interface
D = SATA 6.0 Gb/s
Hardware Features
AB = Standard
TA = TAA Compliant
Drive Form Factor
AK = 2.5-inch (7mm)
AV = M.2 (80mm x 22mm)
Extended Firmware Features
Z = None
6 = SED TCG eSSC
Drive Capacity
240 = 240GB
480 = 480GB
960 = 960GB
1T9 = 1920GB
3T8 = 3840GB
7T6 = 7680GB
Sector Size
1 = 512 byte
NAND Flash Component
AR = 384Gb, TLC, x16, 1.8V (3D)
NAND Flash Type
T = TLC
BOM Revision
For example:
1 = 1st generation
2 = 2nd generation
Product Family
BY = 5100 ECO
CB = 5100 PRO
CC = 5100 MAX
CCMTD-1725822587-10309
5100_series_SSD_disti.pdf - Rev. C 08/17 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
5100 Series NAND Flash SSD
General Description
General Description
Micron’s 5100 solid state drive (SSD) uses a single-chip controller with a SATA interface
on the system side and four channels of Micron NAND Flash internally. Available in
both M.2 and 2.5-inch form factors, the SSD integrates easily in existing storage infra-
structures.
The SSD is designed to use the SATA interface efficiently during both READs and
WRITEs while delivering bandwidth-focused performance. SSD technology enables en-
hanced boot times, faster application load times, reduced power consumption and ex-
tended reliability.
The self-encrypting drive (SED) features a AES-256 encryption engine, providing hard-
ware-based, secure data encryption, with no loss of SSD performance. This SED follows
the TCG Enterprise specification for trusted peripherals. When TCG Enterprise features
are not enabled, the device can perform alternate data encryption by invoking the ATA
security command set encryption features, to provide full disk encryption (FDE) man-
aged in the host system BIOS. TCG Enterprise and ATA security feature sets cannot be
enabled simultaneously.
The data encryption is always running; however, encryption keys are not managed and
the data is not secure until either TCG Enterprise or ATA security feature sets are ena-
bled.
Figure 2: Functional Block Diagram
NAND
SATA
SSD
controller
NAND
NAND
NAND
NAND
DRAM
buffer
CCMTD-1725822587-10309
5100_series_SSD_disti.pdf - Rev. C 08/17 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
5100 Series NAND Flash SSD
Performance
Performance
Measured performance can vary for a number of reasons. The major factors affecting
drive performance are the capacity of the drive and the interface/HBA of the host. Addi-
tionally, overall system performance can affect the measured drive performance. When
comparing drives, it is recommended that all system variables are the same, and only
the drive being tested varies.
Performance numbers will vary depending on the host system configuration. Perform-
ance is measured using a single drive direct attached (no RAID) to an integrated SATA
controller.
Table 1: Drive Performance – ECO 2.5"
Capacity
Parameter
Sequential read (128KB transfer)
Sequential write (128KB transfer)
Random read (4KB transfer)
Random write (4KB transfer)
Random 70/30 R/W (4KB transfer)
READ latency (99.9%)
WRITE latency (99.9%)
READ latency (99.999%)
WRITE latency (99.999%)
Notes:
480GB
540
380
93,000
31,000
49,000
500
500
9.0
5.0
960GB
540
520
93,000
28,000
47,000
500
500
9.0
5.0
1920GB
540
520
93,000
24,000
43,000
500
500
9.0
5.0
3840GB
540
520
93,000
18,000
36,000
500
500
9.0
5.0
7680GB
540
520
93,000
9000
21,000
500
500
9.0
5.0
Unit
MB/s
MB/s
IOPS
IOPS
IOPS
µs
µs
ms
ms
1. Performance measured using FIO with a queue depth of 32 in the steady state region.
2. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
3. System variations and HBA used will affect measured results.
Table 2: Drive Performance – ECO M.2.
Capacity
Parameter
Sequential read (128KB transfer)
Sequential write (128KB transfer)
Random read (4KB transfer)
Random write (4KB transfer)
Random 70/30 R/W (4KB transfer)
READ latency (99.9%)
WRITE latency (99.9%)
READ latency (99.999%)
WRITE latency (99.999%)
Notes:
480GB
540
380
93,000
31,000
49,000
500
500
9.0
5.0
960GB
540
520
93,000
28,000
42,000
500
500
9.0
5.0
1920GB
540
520
93,000
24,000
39,000
500
500
9.0
5.0
Unit
MB/s
MB/s
IOPS
IOPS
IOPS
µs
µs
ms
ms
1. Performance measured using FIO with a queue depth of 32 in the steady state region.
2. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
3. System variations and HBA used will affect measured results.
CCMTD-1725822587-10309
5100_series_SSD_disti.pdf - Rev. C 08/17 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
5100 Series NAND Flash SSD
Performance
Table 3: Drive Performance – PRO 2.5"
Capacity
Parameter
Sequential read (128KB transfer)
Sequential write (128KB transfer)
Random read (4KB transfer)
Random write (4KB transfer)
Random 70/30 R/W (4KB transfer)
READ latency (99.9%)
WRITE latency (99.9%)
READ latency (99.999%)
WRITE latency (99.999%)
Notes:
240GB
540
250
78,000
26,000
43,000
500
500
9.0
5.0
480GB
540
410
93,000
43,000
55,000
500
500
9.0
5.0
960GB
540
520
93,000
37,000
54,000
500
500
9.0
5.0
1920GB
540
520
93,000
37,000
57,000
500
500
9.0
5.0
3840GB
540
520
93,000
30,000
54,000
500
500
9.0
5.0
Unit
MB/s
MB/s
IOPS
IOPS
IOPS
µs
µs
ms
ms
1. Performance measured using FIO with a queue depth of 32 in the steady state region.
2. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
3. System variations and HBA used will affect measured results.
Table 4: Drive Performance – PRO M.2.
Capacity
Parameter
Sequential read (128KB transfer)
Sequential write (128KB transfer)
Random read (4KB transfer)
Random write (4KB transfer)
Random 70/30 R/W (4KB transfer)
READ latency (99.9%)
WRITE latency (99.9%)
READ latency (99.999%)
WRITE latency (99.999%)
Notes:
240GB
540
250
78,000
26,000
43,000
500
500
9.0
5.0
480GB
540
410
93,000
43,000
55,000
500
500
9.0
5.0
960GB
540
520
93,000
37,000
54,000
500
500
9.0
5.0
1920GB
540
520
93,000
37,000
57,000
500
500
9.0
5.0
Unit
MB/s
MB/s
IOPS
IOPS
IOPS
µs
µs
ms
ms
1. Performance measured using FIO with a queue depth of 32 in the steady state region.
2. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
3. System variations and HBA used will affect measured results.
CCMTD-1725822587-10309
5100_series_SSD_disti.pdf - Rev. C 08/17 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
