Data Sheet
FEATURES
10 W (40 dBm), 0.01 GHz to 1.1 GHz,
GaN Power Amplifier
HMC1099PM5E
FUNCTIONAL BLOCK DIAGRAM
GND
NIC
NIC
NIC
NIC
NIC
NIC
GND
GND
NIC
NIC
RFIN/V
GG
RFIN/V
GG
NIC
NIC
GND
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
High small signal gain: 20 dB typical
P
OUT
: 41.5 dBm typical at P
IN
= 27 dBm
High PAE: 60% typical at P
IN
= 27 dBm
Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all
frequencies
Supply voltage: V
DD
= 28 V at a quiescent current of 100 mA
Internal prematching
Simple and compact external tuning for optimal
performance
5 mm × 5 mm, 32-lead LFCSP
HMC1099PM5E
GND
NIC
NIC
RFOUT/V
DD
RFOUT/V
DD
NIC
NIC
GND
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructures
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
NIC = NO INTERNAL CONNECTION. THESE PINS
ARE NOT CONNECTED INTERNALLY.
Figure 1.
GENERAL DESCRIPTION
The HMC1099PM5E is a gallium nitride (GaN), broadband
power amplifier that delivers 10 W (40 dBm) with up to 60%
power added efficiency (PAE) across an instantaneous
bandwidth of 0.01 GHz to 1.1 GHz, at an input power (P
IN
) of
27 dBm. The gain flatness is between 0.5 dB to 2 dB typical at
small signal levels.
The HMC1099PM5E is ideal for pulsed or continuous wave
(CW) applications, such as wireless infrastructure, radars,
public mobile radios, and general-purpose amplification.
The HMC1099PM5E amplifier is externally tuned using low
cost, surface-mount components and is available in a compact
LFCSP.
Multifunction pin names may be referenced by their relevant
function only.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
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Tel: 781.329.4700
©2018 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
16826-001
APPLICATIONS
GND
NIC
NIC
NIC
NIC
NIC
NIC
GND
PACKAGE
BASE
HMC1099PM5E
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Specifications ............................................................... 3
Total Quiescent Current by V
DD
................................................. 4
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
Data Sheet
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions..............................6
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 15
Applications Information .............................................................. 16
Evaluation PCB ........................................................................... 17
Outline Dimensions ....................................................................... 18
Ordering Guide .......................................................................... 18
REVISION HISTORY
9/2018—Rev. A to Rev. B
Change to Storage Temperature Range Parameter, Table 5 ........ 5
8/2018—Rev. 0 to Rev. A
Changes to Figure 34 ...................................................................... 11
Changes to Figure 35 and Figure 36 ............................................. 12
8/2018—Revision 0: Initial Version
Rev. B | Page 2 of 18
Data Sheet
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
HMC1099PM5E
T
A
= 25°C, V
DD
= 28 V, quiescent current (I
DDQ
) = 100 mA, and frequency range = 0.01 GHz to 0.4 GHz unless otherwise noted.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
SUPPLY VOLTAGE
QUIESCENT CURRENT
Symbol
Min
0.01
18
Typ
Max
0.4
Unit
GHz
dB
dB
dB
dB
dBm
dBm
%
%
dBm
dB
V
mA
Input power (P
IN
) = 25 dBm
P
IN
= 27 dBm
P
IN
= 25 dBm
P
IN
= 27 dBm
P
OUT
per tone = 30 dBm
Test Conditions/Comments
20
2
12
15
P
OUT
PAE
OIP3
V
DD
I
DDQ
24
40
41
55
60
50
8
28
100
30
Adjust the gate bias control voltage (V
GG
) from −5 V to 0 V to
achieve I
DDQ
= 100 mA, V
GG
= −2.9 V typical to achieve I
DDQ
= 100 mA
T
A
= 25°C, V
DD
= 28 V, I
DDQ
= 100 mA, and frequency range = 0.4 GHz to 0.8 GHz unless otherwise noted.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
SUPPLY VOLTAGE
QUIESCENT CURRENT
Symbol
Min
0.4
16.5
Typ
Max
0.8
Unit
GHz
dB
dB
dB
dB
dBm
dBm
%
%
dBm
dB
V
mA
P
IN
= 25 dBm
P
IN
= 27 dBm
P
IN
= 25 dBm
P
IN
= 27 dBm
P
OUT
per tone = 30 dBm
Test Conditions/Comments
18
0.5
8
13
P
OUT
PAE
OIP3
V
DD
I
DDQ
24
39
41
45
50
47.5
5
28
100
30
Adjust V
GG
from −5 V to 0 V to achieve I
DDQ
= 100 mA,
V
GG
= −2.9 V typical to achieve I
DDQ
= 100 mA
Rev. B | Page 3 of 18
HMC1099PM5E
T
A
= 25°C, V
DD
= 28 V, I
DDQ
= 100 mA, and frequency range = 0.8 GHz to 1.1 GHz unless otherwise noted.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
SUPPLY VOLTAGE
QUIESCENT CURRENT
Symbol
Min
0.8
16.5
Typ
Max
1.1
Unit
GHz
dB
dB
dB
dB
dBm
dBm
%
%
dBm
dB
V
mA
P
IN
= 25 dBm
P
IN
= 27 dBm
P
IN
= 25 dBm
P
IN
= 27 dBm
P
OUT
per tone = 30 dBm
Test Conditions/Comments
Data Sheet
18
1
12
15
P
OUT
PAE
OIP3
V
DD
I
DDQ
24
40
41.5
55
60
45
5
28
100
30
Adjust V
GG
from −5 V to 0 V to achieve I
DDQ
= 100 mA,
V
GG
= −2.9 V typical to achieve I
DDQ
= 100 mA
TOTAL QUIESCENT CURRENT BY V
DD
Table 4.
Parameter
QUIESCENT CURRENT
Symbol
I
DDQ
Min
Typ
100
100
100
100
Max
Unit
mA
mA
mA
mA
Test Conditions/Comments
Adjust V
GG
between −5 V and 0 V to achieve I
DDQ
= 100 mA typical
V
DD
= 24 V
V
DD
= 26 V
V
DD
= 28 V
V
DD
= 30 V
Rev. B | Page 4 of 18
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
1
Supply Voltage (V
DD
)
Gate Bias Voltage (V
GG
)
Radio Frequency Input Power (RFIN)
Voltage Standing Wave Ratio (VSWR)
2
Channel Temperature
Peak Reflow Temperature Moisture
Sensitivity Level 3 (MSL3)
3
Continuous Power Dissipation, P
DISS
(T
A
= 85°C,
Derate 151.5 mW/°C Above 85°C)
Storage Temperature Range
Operating Temperature Range
Electrostatic Discharge (ESD) Sensitivity
Human Body Model
1
HMC1099PM5E
THERMAL RESISTANCE
Rating
32 V
−8 V to 0 V
33 dBm
6:1
225°C
260°C
21.21 W
−65°C to +150°C
−40°C to +85°C
Class 1B,
passed 500 V
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JC
is the junction to case thermal resistance.
Table 6. Thermal Resistance
Package Type
CG-32-2
1
1
θ
JC
6.6
Unit
°C/W
Thermal resistance (θ
JC
) was determined by simulation under the following
conditions: the heat transfer is due solely to thermal conduction from the
channel, through the ground paddle, to the PCB, and the ground paddle is
held constant at the operating temperature of 85°C.
ESD CAUTION
When referring to a single function of a multifunction pin in the parameters,
only the portion of the pin name that is relevant to the absolute maximum
rating is listed. For full pin names of multifunction pins, refer to the Pin
Configuration and Function Descriptions section.
2
Restricted by maximum power dissipation.
3
See the Ordering Guide for additional information.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. B | Page 5 of 18
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