HMC1099LP5DE
v00.1113
10 WATT GaN POWER AMPLIFIER
0.01 - 1.1 GHz
Typical Applications
The HmC1099lp5De is ideal for:
• Extended Battery Operation for Public Mobile Radio
Features
High psat: +40.5 dBm
High small signal Gain: 18.5 dB
instantaneous Bandwidth: 10 mHz to 1.1 GHz
High pAe: 69%
supply Voltage: Vdd = +28V @ 100 mA
internal prematching: simple & compact external
tuning for optimum performance.
32 lead 5x5 smT package: 25 mm²
Amplifiers - lineAr & power - smT
• Power Amplifier Stage for Wireless Infrastructure
• Test & Meassurement Equipment
• Commercial & Military Radar
• General Purpose Transmitter Amplification
Functional Diagram
General Description
Pr
parameter
Electrical Specifications,
T
A
= +25° C, Vdd =+28V, Idd = 100 mA
[1]
min.
Typ.
0.01 - 0.4
20
±1
12
15
40
15
40.5
40.5
13
49
73
8
100
16.5
max.
min.
Typ.
0.4 - 0.7
18.5
±0.25
9.5
14
40.5
14
40.5
40.5
13
48
69
5.5
100
16.5
max.
min.
Typ.
0.7 - 1.1
18.5
±0.5
12
17
41.5
14
41.5
41.5
13.5
47
69
5
100
max
Units
GHz
dB
dB
dB
dB
dBm
dB
dBm
dBm
dB
dBm
%
dB
mA
Frequency Range
small signal Gain
Gain flatness
input return loss
output return loss
output power for 4dB Compression (p4dB)
power Gain for 4dB Compression (p4dB)
Output Power for 27 dBm Input
saturated output power (psat)
power Gain for saturated output power (psat)
output Third order intercept (ip3)
power Added efficiency (pAe)
noise figure
Total supply Current
[2]
[1] Adjust Vgg between -8 to 0V to achieve Idd = 100 mA typical.
[2] measurement taken at pout / tone = +30 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
el
im
18
The HMC1099LP5DE is a GaN broadband power
amplifier delivering 10W with up to 70% PAE across
an instantaneous bandwidth of 10 MHz to 1.1 GHz,
with ±0.5 dB gain flatness. The HmC1099lp5De is
ideal for pulsed or Cw applications such as wireless
infrastructure, radar, public mobile radio and general
purpose amplification. The HMC1099LP5DE amplifier
is externally tuned using low cost surface mount
components and is available in a compact QFN
package.
in
ar
y
HMC1099LP5DE
v00.1113
10 WATT GaN POWER AMPLIFIER
0.01 - 1.1 GHz
Gain & Return Loss
30
20
10
0
-10
-20
-30
-40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
25
21
Gain (dB)
17
13
9
5
0
0.2
0.4
0.6
0.8
1
1.2
FREQUENCY (GHz)
85 C
-40 C
25 C
Input Return Loss vs. Temperature
0
-5
Return Loss (dB)
Output Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
FREQUENCY (GHz)
25 C
85 C
FREQUENCY (GHz)
25 C
85 C
-40 C
Gain vs. Supply Voltage
25
21
Pr
-40 C
Gain vs. Supply Current
25
21
Gain (dB)
13
Gain (dB)
17
17
13
9
9
5
0
0.2
0.4
0.6
0.8
1
1.2
FREQUENCY (GHz)
24V
28V
5
0
0.2
0.4
0.6
0.8
1
1.2
FREQUENCY (GHz)
50 mA
100 mA
150 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - smT
2
Response (dB)
el
im
Return Loss (dB)
in
ar
y
HMC1099LP5DE
v00.1113
10 WATT GaN POWER AMPLIFIER
0.01 - 1.1 GHz
Pout vs. Frequency
44
P4dB vs. Temperature
45
Amplifiers - lineAr & power - smT
43
42
Pout (dBm)
41
40
39
38
37
36
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
P4dB
Pin=27dBm
Psat
40
P4dB (dBm)
35
30
25
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
+85C
-40C
P4dB vs. Supply Voltage
45
40
P4dB (dBm)
35
el
im
0.6
0.7
0.8
0.9
1
1.1
28V
Psat (dBm)
30
25
0
0.1
0.2
0.3
0.4
0.5
in
ar
45
40
35
30
25
0
0.1
0.2
0.3
0.4
0.5
+25C
Psat vs. Temperature
y
+25C
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
24V
FREQUENCY (GHz)
+85C
-40C
Psat vs. Supply Voltage
45
Pr
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
P4dB vs. Supply Current
45
40
P4dB (dBm)
0
0.1
0.2
Psat (dBm)
40
35
35
30
30
25
FREQUENCY (GHz)
24V
28V
25
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
50 mA
100 mA
150 mA
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1099LP5DE
v00.1113
10 WATT GaN POWER AMPLIFIER
0.01 - 1.1 GHz
Psat vs. Supply Current
45
Power Gain vs. Frequency
20
16
POWER GAIN (dB)
40
Psat (dBm)
12
35
8
30
4
25
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
50 mA
100 mA
150 mA
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
Pin=27dBm
Psat
P4dBm
Output IP3 vs. Temperature,
Pout/tone = +30 dBm
55
52
Output IP3 vs. Supply Voltage,
Pout/tone = +30 dBm
55
52
IP3 (dBm)
49
49
46
46
43
43
40
0
0.2
0.4
40
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
24V
28V
0.6
0.8
1
FREQUENCY (GHz)
+25 C
+85 C
Output IP3 vs. Supply Current,
Pout/tone = +30 dBm
55
52
Pr
-40 C
Output IM3 @ Vdd= +24V
65
60
55
IM3 (dBc)
50
45
40
35
30
IP3 (dBm)
49
46
43
40
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
50 mA
100 mA
150 mA
25
10
12
14
16
18
20
22
24
26
28
30
32
Pout/tone(dBm)
0.1 GHz
0.5 GHz
1 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - smT
4
el
im
IP3 (dBm)
in
ar
y
HMC1099LP5DE
v00.1113
10 WATT GaN POWER AMPLIFIER
0.01 - 1.1 GHz
Output IM3 @ Vdd= +28V
65
Power Compression @ 0.1 GHz
90
80
Pout(dBm), GAIN(dB), PAE(%)
70
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
0
4
8
12
16
20
24
28
INPUT POWER (dBm)
Gain
Idd
PAE
Amplifiers - lineAr & power - smT
60
55
IM3 (dBc)
50
45
40
35
30
25
10
12
14
16
18
20
22
24
26
28
30
32
Pout/tone(dBm)
0.1 GHz
0.5 GHz
1 GHz
Idd (mA)
Power Compression @ 0.5 GHz
80
Pout(dBm), GAIN(dB), PAE(%)
70
60
50
40
30
20
10
0
0
4
8
12
800
700
600
500
400
300
200
100
0
in
ar
80
70
60
50
40
30
20
10
0
0
4
8
12
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
Pout
Power Compression @ 1 GHz
850
750
650
550
Idd (mA)
450
350
250
150
50
16
20
24
28
INPUT POWER (dBm)
Gain
Idd
PAE
INPUT POWER (dBm)
Pout
Gain
Idd
Pr
PAE
el
im
16
20
24
28
0.6
0.7
0.8
0.9
1
1.1
+85 C
-40 C
PAE vs. Temperature
90
80
70
60
PAE(%)
50
40
30
20
10
0
0
0.1
0.2
0.3
0.4
0.5
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
0
0.2
0.4
0.6
0.8
1
1.2
FREQUENCY (GHz)
+25 C
+25 C
y
Pout
FREQUENCY (GHz)
+85 C
-40 C
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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