1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “E”
or D-5B
FEATURES
•
•
•
•
•
•
•
Surface mount series equivalent to the JEDEC registered
1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6626US, SP6629US, etc.
Axial-leaded equivalents also available (see separate data
sheet for 1N6626 thru 1N6631)
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
•
MAXIMUM RATINGS
•
•
•
Junction Temperature: -65
o
C to +150
o
C
Storage Temperature: -65
o
C to +175
o
C
Peak Forward Surge Current @ 25
o
C: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
o
Average Rectified Forward Current (I
O
) at T
EC
= +110 C:
1N6626US thru 1N6628US
2.3 A
1N6629US thru 1N6631US
1.8 A
o
(Derate linearly at 2.5%/ C for T
EC
> +110
o
C)
Average Rectified Forward Current (I
O
) at T
A
=25
o
C:
1N6626US thru 1N6628US
1.75 A
1N6629US thru 1N6631US
1.40 A
o
o
(Derate linearly at 0.80%/ C for T
A
>+25 C. This I
O
rating
is for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where T
J(max)
is
not exceeded. See latest issue of MIL-PRF-19500/590)
o
Thermal Resistance junction to endcap (R
θ
JEC
): 6.5 C/W
Capacitance at V
R
= 10 V: 40 pF
o
Solder temperature: 260 C for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous
inventory had solid Silver end caps with
Tin/Lead finish.
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions and recommended
pad layout on last page
•
•
•
•
•
•
•
1N6626US – 1N6631US
•
•
•
Copyright
©
2009
10-30-2009 REV G, SD53A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C
TYPE
NUMBER
MINIMUM
BREAK-
DOWN
VOLTAGE
V
R
I
R
= 50
μA
MAXIMUM
FORWARD
VOLTAGE
V
F
@ I
F
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
MAXIMUM
REVERSE
CURRENT I
R
@
V
RWM
T
A
=25
o
C
T
A
=150
o
C
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
t
rr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
t
rr
Note 2
PEAK
RECOVERY
CURRENT
I
RM
(rec)
I
F
= 2 A,
100 A/μs
Note 2
FORWARD
RECOVERY
VOLTAGE
V
FRM
Max
I
F
= 0.5 A
t
r
= 12 ns
WWW .
Microsemi
.C
OM
1N6626US
1N6627US
1N6628US
1N6629US
1N6630US
1N6631US
V
220
440
660
880
990
1100
V@A
1.35V @ 2.0 A
1.35V @ 2.0 A
1.35V @ 2.0 A
1.40V @ 1.4 A
1.40V @ 1.4 A
1.60V @ 1.4 A
V@A
1.50V @ 4.0 A
1.50V @ 4.0 A
1.50V @ 4.0 A
1.70V @ 3.0 A
1.70V @ 3.0 A
1.95V @ 2.0 A
V
200
400
600
800
900
1000
μA
2.0
2.0
2.0
2.0
2.0
4.0
μA
500
500
500
500
500
600
ns
30
30
30
50
50
60
ns
45
45
45
60
60
80
A
3.5
3.5
3.5
4.2
4.2
5.0
V
8
8
8
12
12
20
NOTE 1: Low Current Reverse Recovery Time Test Conditions: I
F
=0.5A, I
RM
=1.0A, I
R(REC)
= 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: I
F
= 2 A, 100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
Symbol
V
BR
V
RWM
V
F
I
R
C
t
rr
CHARTS AND GRAPHS
1N6626US – 1N6631US
FIGURE 1
Typical Forward Current
vs
Forward Voltage
Copyright
©
2009
10-30-2009 REV G, SD53A
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
PACKAGE DIMENSIONS AND PAD LAYOUT
WWW .
Microsemi
.C
OM
NOTE: This Package Outline has also previously
been identified as “D-5B”
PAD LAYOUT
INCHES
A
0.288
0.070
0.155
mm
7.32
1.78
3.94
INCHES
MIN
BL
BD
ECT
S
.200
.137
.019
.003
MAX
.225
.148
.028
---
MIN
5.08
3.48
0.48
0.08
mm
MAX
5.72
3.76
0.711
---
B
C
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
1N6626US – 1N6631US
Copyright
©
2009
10-30-2009 REV G, SD53A
Microsemi
Page 4
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
DSP 与 ARM 处理器
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