RD3H200SNFRA
Nch 45V 20A Power MOSFET
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Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
45V
28mΩ
±20A
20W
DPAK
TO-252
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Inner circuit
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Features
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
6) AEC-Q101 Qualified
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Packaging specifications
Packing
Reel size (mm)
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Application
Embossed
Tape
330
16
2500
TL
RD3H200SN
Unit
V
A
A
V
W
℃
℃
Type
Switching
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Value
45
±20
±40
±20
20
150
-55 to +150
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D*1
I
DP*2
V
GSS
P
D*3
T
j
T
stg
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© 2018 ROHM Co., Ltd. All rights reserved.
1/11
20180521 - Rev.001
RD3H200SNFRA
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - case
Symbol
R
thJC*3
Values
Min.
-
Typ.
-
Max.
6.25
Unit
℃
/W
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
45
-
-
-
1.0
-
-
-
-
-
10
Typ.
-
46.8
-
-
-
-3.9
20
25
28
5.3
-
Max.
-
-
1
±10
2.5
-
28
35
40
-
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
μA
V
mV/
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 45V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 10V , I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 10V, I
D
= 20A
R
DS(on)*4
V
GS
= 4.5V, I
D
= 20A
V
GS
= 4V, I
D
= 20A
R
G
|Y
fs
|
*4
f = 1MHz, open drain
V
DS
= 10V, I
D
= 20A
mΩ
Ω
S
*1 Limited only by maximum temperature allowed.
*2 Pw
≦
10μs , Duty cycle
≦
1%
*3 T
C
=25
℃
*4 Pulsed
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© 2018 ROHM Co., Ltd. All rights reserved.
2/11
20180521 - Rev.001
RD3H200SNFRA
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
25V,V
GS
= 10V
Unit
Typ.
950
250
120
10
20
50
20
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= 10A
R
L
⋍
2.5Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
Min.
V
DD
⋍
25V,
I
D
= 20A,
V
GS
= 5V
-
-
-
Typ.
12
3.5
4.0
Max.
-
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S*1
I
SP*2
V
SD*4
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 20A
-
-
-
Typ.
-
-
-
Max.
16
40
1.2
A
A
V
Unit
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© 2018 ROHM Co., Ltd. All rights reserved.
3/11
20180521 - Rev.001
RD3H200SNFRA
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2018 ROHM Co., Ltd. All rights reserved.
4/11
20180521 - Rev.001
RD3H200SNFRA
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
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© 2018 ROHM Co., Ltd. All rights reserved.
5/11
20180521 - Rev.001
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