IAUS300N08S5N014
OptiMOS™-5 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
80
1.4
300
PG-HSOG-8-1
Tab
V
mW
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
1
Drain
Tab
8
Type
IAUS300N08S5N014
Package
PG-HSOG-8-1
Marking
A08S5N14
Gate
pin 1
Source
pin 2 - 8
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25 °C
I
D
=150 A
-
-
T
C
=25 °C
-
-
Value
300
230
1200
600
300
±20
300
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2018-05-25
IAUS300N08S5N014
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
-
-
-
0.5
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
GS
=0 V,
I
D
=1 mA
V
DS
=V
GS
,
I
D
=230 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=85 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=6 V,
I
D
=75 A
V
GS
=10 V,
I
D
=100 A
Drain-source breakdown voltage
2)
Gate threshold voltage
Zero gate voltage drain current
2)
V
(BR)DSS
V
GS(th)
I
DSS
80
2.2
-
-
3
0.1
-
3.8
1
V
µA
-
-
-
-
1
-
1.6
1.1
20
100
2.1
1.4
nA
mΩ
Rev. 1.0
page 2
2018-05-25
IAUS300N08S5N014
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=3.5
W
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
10137
1626
71
25
15
52
46
13178 pF
2114
106
-
-
-
-
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=40 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
46
30
144
4.5
60
47
187
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
R
=40 V,
I
F
=50A,
di
F
/dt =100 A/µs
-
-
-
-
-
0.9
83
156
300
1200
1.2
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 0.5 K/W the chip is able to carry 327A at 25°C.
Defined by design. Not subject to production test.
2)
Rev. 1.0
page 3
2018-05-25
IAUS300N08S5N014
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥ 6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥ 6 V
350
300
300
250
250
200
P
tot
[W]
200
150
I
D
[A]
150
100
50
0
0
50
100
150
200
0
50
100
150
200
100
50
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
10000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
1000
10 µs
100 µs
1 µs
10
-1
0.1
Z
thJC
[K/W]
1 ms
I
D
[A]
100
0.05
0.01
10
-2
10
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2018-05-25
IAUS300N08S5N014
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
1200
10 V
9V
7V
8V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
4
4.5 V
5V
1000
3.5
800
6V
3
R
DS(on)
[mW]
I
D
[A]
600
2.5
400
2
6V
200
5V
1.5
7V
8V
10 V
0
0
1
2
3
4
5
6
7
1
0
100
200
300
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
1200
-55 °C
25 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 100 A;
V
GS
= 10 V
2.5
1000
2
175 °C
800
R
DS(on)
[mW]
I
D
[A]
600
1.5
400
1
200
0
2.5
3.5
4.5
5.5
6.5
7.5
0.5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2018-05-25
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