HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Typical Applications
This HmC1040lp3Be is ideal for:
Features
low Noise figure: 2.2 dB
High Gain: 23 dB
p1dB output power: +12 dBm
single supply: +2.5V @ 70 mA
output ip3: +22 dBm
50 ohm matched input/output
16 lead 3x3 mm smT package: 16mm²
Amplifiers - low Noise - smT
• Point-to-Point Radios
• Test Instrumentation
• SatCom Transponders & VSAT
• Industrial Sensors
• EW & ECM Subsystems
Functional Diagram
General Description
The HMC1040LP3CE is a self-biased GaAs MMIC
low Noise Amplifier housed in a leadless 3x3 mm
plastic surface mount package. The amplifier operates
between 24 and 43.5 GHz, delivering 23 dB of small
signal gain, 2.2 dB noise figure, and output IP3 of +22
dBm, while requiring only 70 mA from a +2.5 V supply.
The P1dB output power of +12 dBm enables the LNA to
function as a LO driver for many of Hittite’s balanced, I/Q
and image reject mixers. The HmC1040lp3Ce fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, and is ideal for high capacity
microwave radios and VsAT applications.
Electrical Specifications
,
T
A
= +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA
parameter
Frequency Range
Gain
[1]
Gain Variation over Temperature
Noise figure
[1]
input return loss
output return loss
output power for 1 dB Compression
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
(Vdd = 2.5V)
[1] Board loss subtracted out.
22
min.
Typ.
24 - 27.5
25
0.022
2.7
11
16
12
14
22
70
85
3.2
20
max.
min.
Typ.
27.5 - 33.5
23
0.021
2.2
12
13
12
14
22
70
85
2.7
17
max.
min.
Typ.
33.5 - 43.5
20
0.021
2.7
10
10
12
14
24
70
85
3.2
max.
Units
GHz
dB
dB /°C
dB
dB
dB
dBm
dBm
dBm
mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Broadband Gain & Return Loss
[1]
35
25
RESPONSE (dB)
15
GAIN (dB)
5
-5
-15
-25
-35
15
19
23
27
31
35
39
43
47
FREQUENCY (GHz)
14
+25C
+85C
-40C
S21
S11
S22
Gain vs. Temperature
[1]
30
26
22
18
10
18
21
24
27
30
33
36
39
42
45
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-4
RETURN LOSS (dB)
-8
RETURN LOSS (dB)
+25C
+85C
-40C
-4
+25C
+85C
-40C
-8
-12
-12
-16
-16
-20
18
21
24
27
30
33
36
39
42
45
FREQUENCY (GHz)
-20
18
21
24
27
30
33
36
39
42
45
FREQUENCY (GHz)
Noise Figure vs. Temperature
[1]
6
5
NOISE FIGURE (dB)
4
3
2
1
0
20
22 24 26
28 30 32
34
36 38 40
42 44
46
FREQUENCY (GHz)
+25C
+85C
-40C
Output IP3 vs. Temperature
30
25
IP3 (dBm)
20
+25C
+85C
-40C
15
10
5
19
22
25
28
31
34
37
40
43
46
FREQUENCY (GHz)
[1] Board loss subtracted out, gain only.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - low Noise - smT
2
HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
P1dB vs. Temperature
17
Psat vs. Temperature
17
Amplifiers - low Noise - smT
15
13
11
9
7
5
19
22
25
28
31
34
37
40
43
46
FREQUENCY (GHz)
+25C
+85C
-40C
15
Psat (dBm)
P1dB (dBm)
13
+25C
+85C
-40C
11
9
7
19
22
25
28
31
34
37
40
43
46
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
18
21
24
27
30
33
36
39
42
45
FREQUENCY (GHz)
+25C
+85C
-40C
Power Compression @ 25 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-15
Pout
Gain
PAE
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
INPUT POWER (dBm)
Power Compression @ 33 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-15 -14 -13 -12 -11 -10 -9
Pout
Gain
PAE
Power Compression @ 42 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-15
Pout
Gain
PAE
-8
-7
-6
-5
-4
-3
-2
INPUT POWER (dBm)
-12
-9
-6
-3
0
INPUT POWER (dBm)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Current vs. Input Power @ 33 GHz
80
78
76
Idd (mA)
74
72
70
68
66
-15 -14 -13 -12 -11 -10 -9
Idd
Absolute Maximum Ratings
Drain Bias Voltage
rf input power
Channel Temperature
Continuous pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal resistance
(Channel to ground paddle)
storage Temperature
operating Temperature
esD sensitivity (HBm)
+4V
175 °C
0.49 w
183 °C/w
-65 to +150 °C
-40 to +85 °C
Class 0, 100 V
-8
-7
-6
-5
-4
-3
-2
INPUT POWER (dBm)
Outline Drawing
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Package Information
Part Number
HmC1040lp3Ce
package Body material
NoTes:
1. pACKAGe BoDY mATeriAl: low sTress iNJeCTioN molDeD
plAsTiC siliCA AND siliCoN impreGNATeD.
2. leAD AND GroUND pADDle mATeriAl: Copper AlloY.
3. leAD AND GroUND pADDle plATiNG: 100% mATTe TiN
4. DimeNsioNs Are iN iNCHes [millimeTers].
5. leAD spACiNG TolerANCe is NoN-CUmUlATiVe.
6. pAD BUrr leNGTH sHAll Be 0.15mm mAX. pAD BUrr HeiGHT sHAll
Be 0.05mm mAX.
7. pACKAGe wArp sHAll NoT eXCeeD 0.05mm
8. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To
pCB rf GroUND.
9. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD pCB lAND
pATTerN.
lead finish
100% matte sn
msl rating
msl1
[1]
package marking
[2]
H1040
XXXX
roHs-compliant low stress injection molded plastic
[1] max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - low Noise - smT
4
+5 dBm
HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Pin Descriptions
Pin Number
function
Description
These pins and package bottom must
be connected to RF/DC ground.
interface schematic
Amplifiers - low Noise - smT
1, 2, 4,
9, 11, 12
GND
3
rfiN
This pin AC coupled
and matched to 50 ohms
5-8, 14
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to rf/
DC ground externally.
10
rfoUT
This pin AC coupled
and matched to 50 ohms
13, 15, 16
Vdd3, Vdd2, Vdd1
Drain bias voltages for the amplifier. See Application Circuit
for required external componnets.
Application Circuit
Capacitor
C1 - C3
C4 - C6
C7 - C9
Value
100 pf
10 nf
4.7 µf
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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