NXP Semiconductors
Technical Data
Document Number: MRFX600H
Rev. 0, 09/2018
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
Typical Performance
Frequency
(MHz)
87.5–108
(1,2)
230
(3)
Signal Type
CW
Pulse
(100
sec,
20% Duty Cycle)
V
DD
(V)
62
65
P
out
(W)
680 CW
600 Peak
G
ps
(dB)
21.3
26.4
D
(%)
83.0
74.4
MRFX600H
MRFX600HS
MRFX600GS
1.8–400 MHz, 600 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
NI-
-780H-
-4L
MRFX600H
Load Mismatch/Ruggedness
Frequency
(MHz)
230
(3)
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
2.5 Peak
(3 dB
Overdrive)
Test
Voltage
65
Result
No Device
Degradation
NI-
-780S-
-4L
MRFX600HS
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz production test fixture (page 10).
NI-
-780GS-
-4L
MRFX600GS
Features
Unmatched input and output allowing wide frequency range utilization
Output impedance fits a 4:1 transformer
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 V
DD
operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Mobile radio
– HF and VHF communications
– PMR base stations
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2018 NXP B.V.
MRFX600H MRFX600HS MRFX600GS
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
–0.5, +179
–6.0, +10
– 65 to +150
–40 to +150
–40 to +225
1333
6.67
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 75C, 650 W CW, 62 Vdc, I
DQ(A+B)
= 250 mA, 98 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73C, 600 W Peak, 100
sec
Pulse Width, 20% Duty Cycle,
65 Vdc, I
DQ
(A+B)
= 100 mA, 230 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.15
0.037
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Class
Class 2, passes 2500 V
Class C3, passes 1000 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 mAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 179 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 277
Adc)
Gate Quiescent Voltage
(V
DD
= 65 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 0.74 Adc)
Forward Transconductance
(4)
(V
DS
= 10 Vdc, I
D
= 32 Adc)
1.
2.
3.
4.
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.1
2.7
—
—
2.5
2.9
0.2
33.6
2.9
3.2
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
179
—
—
—
193
—
—
1
—
10
100
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Each side of device measured separately.
(continued)
MRFX600H MRFX600HS MRFX600GS
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 65 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 65 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 65 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.1
84
299
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In NXP Production Test Fixture, 50 ohm system) V
DD
= 65 Vdc, I
DQ
(A+B)
= 100 mA, P
out
= 600 W Peak
(120 W Avg.), f = 230 MHz, 100
sec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
24.5
71.0
—
26.4
74.4
–23
27.5
—
–12
dB
%
dB
Table 5. Load Mismatch/Ruggedness
(In NXP Production Test Fixture, 50 ohm system) I
DQ
(A+B)
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
2.5 Peak
(3 dB Overdrive)
Test Voltage, V
DD
65
Result
No Device Degradation
Table 6. Ordering Information
Device
MRFX600HR5
MRFX600HSR5
MRFX600GSR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
NI--780H--4L
NI--780S--4L
NI--780GS--4L
Package
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GS) parts.
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1000
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C
iss
1.08
1.06
NORMALIZED V
GS(Q)
1.04
1.02
1
0.98
0.96
I
DQ(A+B)
= 100 mA
250 mA
V
DD
= 65 Vdc
C, CAPACITANCE (pF)
100
C
oss
750 mA
1500 mA
10
C
rss
1
0
10
20
30
40
50
60
70
0.94
0.92
–50
–25
0
25
50
75
100
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (C)
I
DQ
(mA)
100
250
750
1500
Slope (mV/C)
–3.20
–2.48
–2.16
–1.36
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
MRFX600H MRFX600HS MRFX600GS
4
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9
4.7 (7.3 cm
12.0 cm)
Table 7. 87.5–108 MHz Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
I
DQ(A+B)
= 250 mA, P
in
= 5 W, CW
Frequency
(MHz)
87.5
98
108
V
DD
(V)
62
62
62
P
out
(W)
705
680
650
G
ps
(dB)
21.5
21.3
21.2
D
(%)
80.0
83.0
82.5
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
5
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