1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
Schottky Barrier Diode
Qualified per MIL-PRF-19500/444
DESCRIPTION
This Schottky barrier diode is metallurgically bonded and offers military grade qualifications
for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically
sealed and bonded into a DO-35 glass package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 numbers.
Metallurgically bonded.
JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on
“1N” numbers only.
(See
Part Nomenclature
for all available options).
•
RoHS compliant versions available (commercial grade only).
DO-35
(DO-204AH)
Package
Also available in:
UB package
(3-pin surface mount)
1N5711UB, 1N5712UB
(B, CC, CA)
DO-213AA package
APPLICATIONS / BENEFITS
•
•
•
Low reverse leakage characteristics.
Small size for high density mounting using flexible thru-hole leads (see package illustration).
ESD sensitive to Class 1.
(surface mount)
1N5711UR-1, 1N5712UR-1,
1N6857UR-1, and
1N6858UR-1
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
Average Rectified Output Current:
1N5711
(2)
DSB2810, DSB5712, 1N5712 & 1N6858
(3)
1N6857
Solder Temperature @ 10 s
NOTES:
1. At T
L
= +130°C and L = 0.375 inch, derate I
O
to 0 at +150°C.
2. At T
L
= +110°C and L = 0.375 inch, derate I
O
to 0 at +150°C.
3. At T
L
= +70°C and L = 0.375 inch, derate I
O
to 0 at +150°C.
(1)
Symbol
T
J
and T
STG
R
ӨJL
Value
-65 to +150
250
Unit
ºC
ºC/W
I
O
33
75
150
260
mA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
C
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 1 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed glass package.
TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
POLARITY: Cathode indicated by band.
MARKING: Part number.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: Approximately 0.2 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
CDS (reference JANS)*
Blank = Commercial grade
*Available only on 1N5711-1
1N5711
-1
(e3)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
JEDEC type number
(see
Electrical Characteristics
table)
DSB
Diode Schottky Barrier
Series number
(see
Electrical Characteristics
table)
2810
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Symbol
C
f
I
R
I
O
t
rr
V
(BR)
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
frequency
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V
R
.
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Breakdown Voltage: A voltage in the breakdown region.
Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current.
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 2 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise noted
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V (pk)
50
16
16
50
16
16
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
@ V
R
nA
Volts
200
50
150
16
150
16
200
50
100
15
150
16
MAXIMUM
CAPACITANCE
@ V
R
= 0
VOLTS
f = 1.0 MHz
C
pF
2.0
2.0
4.5
4.5
2.0
2.0
TYPE
NUMBER
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
V
(BR)
@ 10 µA
Volts
70
20
20
70
20
20
V
F
@ 1 mA
Volts
0.41
0.41
0.35
0.36
0.41
0.41
V
F
@ I
F
V @ mA
1.0 @ 15
1.0 @ 35
0.75 @ 35
0.65 @ 15
1.0 @ 35
1.0 @ 35
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 3 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
GRAPHS
I
F
– Forward Current (mA)
V
F
– Forward Voltage (V)
FIGURE 1
I-V Curve showing typical Forward Voltage Variation
Temperature for the 1N5712-1, DSB5712 and DSB2810 Schottky Diodes
I
R
– Reverse Current (nA)
V
R
– Reverse Voltage (V) (PULSED)
FIGURE 2
1N5712-1, DSB5712 and DSB2810 Typical variation of Reverse
Current (I
R
) vs Reverse Voltage (V
R
) at Various Temperatures
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 4 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
GRAPHS
I
F
– Forward Current (mA)
V
F
– Forward Voltage (V)
FIGURE 3
I – V curve showing typical Forward Voltage Variation
With Temperature Schottky Diode 1N5711
I
R
– Reverse Current (nA)
V
R
– Reverse Voltage (V) (PULSED)
FIGURE 4
1N5711 Typical Variation of Reverse Current (I
R
) vs Reverse Voltage (V
R
)
at Various Temperatures
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 5 of 7
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