80mW - 650V SiC Cascode | UF3C065080K4S
Datasheet
Description
CASE
United Silicon Carbide's cascode products co-package its high-
performance F3 SiC fast JFETs with a cascode optimized MOSFET to
produce the only standard gate drive SiC device in the market today.
This series exhibits very fast switching using a 4-terminal TO-247-
package and the best reverse recovery characteristics of any device of
similar ratings. These devices are excellent for switching inductive loads,
and any application requiring standard gate drive.
1 2 34
Part Number
UF3C065080K4S
Package
CASE
D (1)
G (4)
KS (3)
S (2)
Marking
UF3C065080K4S
TO-247-4L
Features
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Typical on-resistance R
DS(on),typ
of 80mW
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2
TO-247-4L package for faster switching, clean gate waveforms
Typical Applications
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EV charging
PV inverters
Switch mode power supplies
Power factor correction modules
Motor drives
Induction heating
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
1
Pulsed drain current
2
Single pulsed avalanche energy
3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 seconds
1
2
3
Limited by T
J,max
Pulse width t
p
limited by T
J,max
Starting T
J
= 25°C
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
tot
T
J,max
T
J
, T
STG
T
L
DC
T
C
=25°C
T
C
=100°C
T
C
=25°C
L=15mH, I
AS
=2.1A
T
C
=25°C
Test Conditions
Value
650
-25 to +25
31
23
65
33
190
175
-55 to 175
250
Units
V
V
A
A
A
mJ
W
°C
°C
°C
Preliminary, November 2018
1
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80mW - 650V SiC Cascode | UF3C065080K4S
Datasheet
Electrical Characteristics
(T
J
= +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Symbol
BV
DS
Test Conditions
V
GS
=0V, I
D
=1mA
V
DS
=650V,
V
GS
=0V, T
J
=25°C
V
DS
=650V,
V
GS
=0V, T
J
=175°C
V
DS
=0V, T
j
=25°C,
V
GS
=-20V / +20V
V
GS
=12V, I
D
=20A,
T
J
=25°C
V
GS
=12V, I
D
=20A,
T
J
=175°C
V
DS
=5V, I
D
=10mA
f=1MHz, open drain
4
Value
Min
650
Typ
Max
Units
V
6
40
6
80
141
5
4.5
6
V
W
20
100
mW
mA
100
mA
Total drain leakage current
I
DSS
Total gate leakage current
I
GSS
Drain-source on-resistance
R
DS(on)
Gate threshold voltage
Gate resistance
V
G(th)
R
G
Typical Performance - Reverse Diode
Parameter
Diode continuous forward current
1
Diode pulse current
2
Symbol
I
S
I
S,pulse
Test Conditions
T
C
=25°C
T
C
=25°C
V
GS
=0V, I
F
=10A,
T
J
=25°C
V
GS
=0V, I
F
=10A,
T
J
=175°C
V
R
=400V, I
F
=20A,
V
GS
=-5V, R
G_EXT
=10W
di/dt=2200A/ms,
T
J
=25°C
V
R
=400V, I
F
=20A,
V
GS
=-5V, R
G_EXT
=10W
di/dt=2200A/ms,
T
J
=150°C
1.5
1.75
119
16
73
11
nC
ns
nC
ns
Value
Min
Typ
Max
31
65
2
V
Units
A
A
Forward voltage
V
FSD
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Q
rr
t
rr
Q
rr
t
rr
Preliminary, November 2018
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80mW - 650V SiC Cascode | UF3C065080K4S
Datasheet
Typical Performance - Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy related
Effective output capacitance, time related
C
OSS
stored energy
Total gate charge
Gate-drain charge
Gate-source charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
symbol
C
iss
C
oss
C
rss
C
oss(er)
C
oss(tr)
E
oss
Q
G
Q
GD
Q
GS
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOTAL
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOTAL
Test Conditions
V
DS
=100V,
V
GS
=0V,
f=100kHz
V
DS
=0V to 400V,
V
GS
=0V
V
DS
=0V to 400V,
V
GS
=0V
V
DS
=400V, V
GS
=0V
V
DS
=400V, I
D
=20A,
V
GS
=-5V to 15V
V
DS
=400V, I
D
=20A, Gate
Driver=-5V to +12V,
Turn-on R
G,EXT
=8.5W,
Turn-off R
G,EXT
=20W
Inductive Load,
FWD: same device with
V
GS
= -5V, R
G
= 10W,
T
J
=25°C
V
DS
=400V, I
D
=20A, Gate
Driver=-5V to +12V,
Turn-on R
G,EXT
=8.5W,
Turn-off R
G,EXT
=20W
Inductive Load,
FWD: same device with
V
GS
= -5V, R
G
= 10W,
T
J
=150°C
Value
Min
Typ
1500
104
2.6
77
176
6.2
51
11
19
21
20
37
8
121
41
162
17
18
36
7
107
31
138
mJ
ns
mJ
ns
Max
Units
pF
pF
pF
mJ
nC
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
symbol
R
qJC
Test Conditions
Value
Min
Typ
0.61
Max
0.79
Units
°C/W
Preliminary, November 2018
3
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80mW - 650V SiC Cascode | UF3C065080K4S
Datasheet
Typical Performance Diagrams
60
50
60
50
Drain Current, I
D
(A)
40
30
Drain Current, I
D
(A)
Vgs = 15V
Vgs = 8V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
40
Vgs = 15V
30
Vgs = 8V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
20
10
0
0
1
2
20
10
0
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
Figure 1 Typical output characteristics
at T
J
= - 55°C, tp < 250
m
s
60
50
Figure 2 Typical output characteristics
at T
J
= 25°C, tp < 250
m
s
2.0
On Resistance, R
DS_ON
(P.U.)
Drain Current, I
D
(A)
40
30
Vgs = 15V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
1.5
1.0
20
10
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T
J
(°C)
Figure 3 Typical output characteristics
at T
J
= 175°C, tp < 250
m
s
Figure 4 Normalized on-resistance vs.
temperature at V
GS
= 12V and
I
D
= 20A
Preliminary, November 2018
4
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80mW - 650V SiC Cascode | UF3C065080K4S
Datasheet
300
40
Tj = 175°C
Tj = 25°C
Tj = - 55°C
Tj = -55°C
Tj = 25°C
Tj = 175°C
On-Resistance, R
DS(on)
(mW)
250
200
150
100
50
0
0
10
20
30
40
Drain Current, I
D
(A)
50
60
Drain Current, I
D
(A)
30
20
10
0
0
1
2 3 4 5 6 7 8 9
Gate-Source Voltage, V
GS
(V)
10
Figure 5 Typical drain-source
on-resistance at V
GS
= 12V
Figure 6 Typical transfer characteristics
at V
DS
= 5V
6
20
Gate-Source Voltage, V
GS
(V)
-50
0
50
100
150
Junction Temperature, T
J
(°C)
200
Threshold Voltage, V
th
(V)
5
4
3
2
1
0
-100
15
10
5
0
-5
0
10
20
30
40
Gate Charge, Q
G
(nC)
50
60
Figure 7 Threshold voltage vs. T
J
at V
DS
= 5V and I
D
= 10mA
Figure 8 Typical gate charge
at V
DS
= 400V and I
D
= 20A
Preliminary, November 2018
5
For more information go to www.unitedsic.com.
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