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1N5190/TR

产品描述Rectifier Diode,
产品类别分立半导体    二极管   
文件大小145KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

1N5190/TR概述

Rectifier Diode,

1N5190/TR规格参数

参数名称属性值
Objectid7470120690
Reach Compliance Codeunknown
ECCN代码EAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2020-12-18 19:58:42
其他特性HIGH RELIABILITY
应用FAST RECOVERY
最小击穿电压660 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.5 V
JESD-30 代码O-LALF-W2
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压600 V
最大反向电流2 µA
最大反向恢复时间0.4 µs
反向测试电压600 V
表面贴装NO
端子形式WIRE
端子位置AXIAL

文档预览

下载PDF文档
1N5186 thru 1N5188, 1N5190
VOIDLESS-HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/424
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with
voidless-glass construction using an internal “Category
1”
metallurgical bond. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX
and JANTXV
FEATURES
JEDEC registered 1N5186 thru 1N5190 series.
Voidless hermetically sealed glass package.
Working Peak Reverse Voltage 100 to 600 volts.
Internal “Category
I
metallurgical bond.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/424.
RoHS compliant versions available (commercial grade only).
“B” Package
APPLICATIONS / BENEFITS
Fast recovery 3 amp 100 to 600 volt rectifiers.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Junction and Storage Temperature
T
J
and T
STG
(1)
Thermal Resistance Junction-to-Lead
R
ӨJL
o
Forward Surge Current @ 8.3 ms half-sine, T
A
= +150 C
I
FSM
V
RWM
Working Peak Reverse Voltage
1N5186
1N5187
1N5188
1N5190
Average Rectified Forward Current
Maximum Reverse Recovery Time
@ T
A
= +25 C
o
@ T
A
= +150 C
1N5186
1N5187
1N5188
1N5190
o
I
O
t
rr
Solder Temperature @ 10 s
Notes:
1. At 3/8 inch (10 mm) lead length from body.
T
SP
Value
-65 to +175
20
80
100
200
400
600
3.0
0.700
150
200
250
400
260
Unit
o
C
o
C/W
A
V
A
ns
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
C
T4-LDS-0216, Rev. 1 (111512)
©2011 Microsemi Corporation
Page 1 of 3

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