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1N5186/TR

产品描述整流器
产品类别半导体    分立半导体    二极管与整流器    整流器   
文件大小145KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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1N5186/TR概述

整流器

1N5186/TR规格参数

参数名称属性值
厂商名称Microsemi
产品种类整流器
RoHSN
安装风格Through Hole
封装 / 箱体B-Package-2
Vr - 反向电压 100 V
If - 正向电流3 A
类型Fast Recovery Rectifiers
配置Single
Vf - 正向电压1.5 V
最大浪涌电流80 A
Ir - 反向电流 2 uA
恢复时间150 ns
最小工作温度- 65 C
最大工作温度+ 175 C
封装Reel
产品Rectifiers
工厂包装数量100

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1N5186 thru 1N5188, 1N5190
VOIDLESS-HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/424
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with
voidless-glass construction using an internal “Category
1”
metallurgical bond. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX
and JANTXV
FEATURES
JEDEC registered 1N5186 thru 1N5190 series.
Voidless hermetically sealed glass package.
Working Peak Reverse Voltage 100 to 600 volts.
Internal “Category
I
metallurgical bond.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/424.
RoHS compliant versions available (commercial grade only).
“B” Package
APPLICATIONS / BENEFITS
Fast recovery 3 amp 100 to 600 volt rectifiers.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Junction and Storage Temperature
T
J
and T
STG
(1)
Thermal Resistance Junction-to-Lead
R
ӨJL
o
Forward Surge Current @ 8.3 ms half-sine, T
A
= +150 C
I
FSM
V
RWM
Working Peak Reverse Voltage
1N5186
1N5187
1N5188
1N5190
Average Rectified Forward Current
Maximum Reverse Recovery Time
@ T
A
= +25 C
o
@ T
A
= +150 C
1N5186
1N5187
1N5188
1N5190
o
I
O
t
rr
Solder Temperature @ 10 s
Notes:
1. At 3/8 inch (10 mm) lead length from body.
T
SP
Value
-65 to +175
20
80
100
200
400
600
3.0
0.700
150
200
250
400
260
Unit
o
C
o
C/W
A
V
A
ns
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
C
T4-LDS-0216, Rev. 1 (111512)
©2011 Microsemi Corporation
Page 1 of 3

 
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