MMBT4401
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.035 (0.9)
0.079 (2.0)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• As complementary type, the PNP transistor
MMBT4403 is recommended.
• This transistor is also available in the TO-92 case
with the type designation 2N4401.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
2X
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Power Dissipation
Power Dissipation
FR-5 Board
(1)
, T
A
= 25°C
Derate above 25°C
Alumina Substrate
(2)
, T
A
= 25°C
Derate above 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
P
tot
Value
60
40
6.0
200
225
1.8
300
2.4
556
417
150
–55 to +150
Unit
V
V
V
mA
mW
mW/°C
mW
mW/°C
°C/W
°C
°C
Thermal Resistance Junction to Ambient Air
FR-5 Board
Alumina Substrate
Junction Temperature
Storage Temperature Range
Notes:
(1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
ΘJA
T
j
T
S
Document Number 88226
10-May-02
www.vishay.com
1
MMBT4401
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE =
1 V, I
C
= 0.1 mA
V
CE =
1 V, I
C
= 1 mA
V
CE =
1 V, I
C
= 10 mA
V
CE =
1 V, I
C
= 150 mA
V
CE =
2 V, I
C
= 500 mA
I
C
= 0.1 mA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 0.1 mA, I
C
= 0
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
EB
= 0.4 V, V
CE
= 35 V
V
EB
= 0.4 V, V
CE
= 35 V
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 20 mA
f = 100 MHz
V
CB
= 5 V, f = 1 MHz, I
E
= 0
V
CB
= 0.5 V, f = 1 MHz, I
C
= 0
I
B1
= 15 mA, I
C
= 150 mA
V
CC
= 30 V V
BE
= 40 V
I
B1
= 15 mA, I
C
= 150 mA
V
CC
= 30 V V
BE
= 40 V
I
B1
= I
B2
=15 mA, I
C
=150 mA
V
CC
= 30 V
I
B1
= I
B2
= 1 mA, I
C
= 150 mA
V
CC
= 30 V
Min
20
40
80
100
40
60
40
6.0
—
—
0.75
—
—
—
1
0.1 • 10
-4
1.0
40
250
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
300
—
—
—
—
0.40
0.75
0.95
1.20
100
100
15
8 • 10
-4
30
500
—
6.5
30
15
20
225
30
Unit
DC Current Gain
h
FE
—
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(1)
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Base Cut-off Current
Input Impedance
Voltage Feedback Ratio
Output Admittance
Small Signal Current Gain
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Delay Time (see Fig. 1)
Rise Time (see Fig. 1)
Storage Time (see Fig. 2)
Fall Time (see Fig. 2)
Note:
(1) Pulse test: pulse width
≤
300
µs,
cycle
≤
2.0%
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CEV
I
BEV
h
ie
h
re
h
oe
h
fe
f
T
C
CBO
C
EBO
t
d
t
r
t
s
t
f
V
V
V
V
V
nA
nA
kΩ
—
µS
—
MHz
pF
pF
ns
ns
ns
ns
Switching Time Equivalent Test Circuit
Figure 1 - Turn-On Time
1.0 to 100
µs,
DUTY CYCLE
≈
2%
+16 V
0
-2 V
< 2 ns
1kΩ
C
S
* < 10 pF
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
+30V
200Ω
+16 V
0
-14 V
< 20 ns
-4 V
1kΩ
C
S
* < 10 pF
Figure 2 - Turn-Off Time
1.0 to 100
µs,
DUTY CYCLE
≈
2%
+30V
200Ω
www.vishay.com
2
Document Number 88226
10-May-02
51单片机
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