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MMBTH10M3T5G
NPN VHF/UHF Transistor
The MMBTH10M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
VHF/UHF applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
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•
Reduces Board Space
•
This is a Halide−Free Device
•
This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Symbol
V
CEO
V
CBO
V
EBO
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
1
BASE
COLLECTOR
3
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
265
2.1
R
qJA
P
D
470
640
5.1
R
qJA
T
J
, T
stg
195
−55
to
+150
Unit
mW
mW/°C
1
3
MARKING
DIAGRAM
SOT−723
CASE 631AA
STYLE 1
AJ M
2
°C/W
mW
mW/°C
°C/W
°C
AJ
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
MMBTH10M3T5G
Package
Shipping
†
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
January, 2009
−
Rev. 0
1
Publication Order Number:
MMBTH10M3/D
MMBTH10M3T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 100
μAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
μAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 25 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 2.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 4.0 mAdc, I
B
= 0.4 mAdc)
Base−Emitter On Voltage
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Common−Base Feedback Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Collector Base Time Constant
(I
C
= 4.0 mAdc, V
CB
= 10 Vdc, f = 31.8 MHz)
f
T
C
cb
C
rb
rb′C
c
MHz
650
−
−
−
−
−
−
−
−
0.7
0.65
9.0
pF
pF
ps
h
FE
V
CE(sat)
V
BE
−
60
−
−
−
−
−
−
0.5
0.95
Vdc
Vdc
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
25
30
3.0
−
−
−
−
−
−
−
−
−
−
100
100
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
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2
MMBTH10M3T5G
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
y
ib
, INPUT ADMITTANCE
80
y ib , INPUT ADMITTANCE (mmhos)
70
60
- b
ib
jb ib (mmhos)
50
40
30
20
10
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
- 50
- 60
- 20
1000 MHz
- 30
- 40
700
400
200
100
g
ib
0
- 10
0
10
20
30
40
50
g
ib
(mmhos)
60
70
80
Figure 1. Rectangular Form
Figure 2. Polar Form
y
fb
, FORWARD TRANSFER ADMITTANCE
y ib , FORWARD TRANSFER ADMITTANCE (mmhos)
70
60
50
40
30
20
10
0
- 10
- 20
- 30
10
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
70
60
50
40
30
20
10
g
fb
(mmhos)
0
- 10
- 20 - 30
20
jb fb (mmhos)
- g
fb
40
b
fb
50
100
60
200
400
600
700
30
1000 MHz
Figure 3. Rectangular Form
Figure 4. Polar Form
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3
MMBTH10M3T5G
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
y
rb
, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
5.0
0
100
4.0
MPS H11
jb rb (mmhos)
- 1.0
200
3.0
-b
rb
2.0
MPS H10
-b
rb
- 2.0
400
- 3.0
700
1.0
- 4.0
-g
rb
1000 MHz
700
1000
- 5.0
-2.0 -1.8 -1.2 -0.8
-0.4
0.4
0
g
rb
(mmhos)
0.8
1.2
1.6
2.0
0
100
200
300
400 500
f, FREQUENCY (MHz)
Figure 5. Rectangular Form
y
ob
, OUTPUT ADMITTANCE
10
yob, OUTPUT ADMITTANCE (mmhos)
9.0
8.0
7.0
jb ob(mmhos)
6.0
5.0
4.0
3.0
2.0
1.0
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
g
ob
0
0
2.0
2.0
100
b
ob
6.0
8.0
700
10
Figure 6. Polar Form
1000 MHz
4.0
400
200
4.0
6.0
g
ob
(mmhos)
8.0
10
Figure 7. Rectangular Form
Figure 8. Polar Form
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4
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