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MMS8550-H-TP-HF

产品描述Small Signal Bipolar Transistor, 0.5A I(C), PNP,
产品类别晶体管   
文件大小203KB,共2页
制造商Micro Commercial Components (MCC)
标准
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MMS8550-H-TP-HF概述

Small Signal Bipolar Transistor, 0.5A I(C), PNP,

MMS8550-H-TP-HF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micro Commercial Components (MCC)
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
最大集电极电流 (IC)0.5 A
配置Single
最小直流电流增益 (hFE)200
最高工作温度150 °C
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
最大功率耗散 (Abs)0.3 W
表面贴装YES
处于峰值回流温度下的最长时间NOT SPECIFIED
标称过渡频率 (fT)150 MHz
Base Number Matches1

文档预览

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMS8550-L
MMS8550-H
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 0.3Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : 2TY
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=50mAdc, V
CE
=1.0Vdc)
DCCurrent Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base- Emitter Voltage
(I
E
=100mAdc)
Transistor Frequency
(I
C
=20mAdc, V
CE
=6.0Vdc, f=30MHz)
Min
40
25
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
C
C
B
B
E
Vdc
Vdc
uAdc
uAdc
G
F
E
H
J
DIMENSIONS
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
120
50
---
---
---
350
---
0.6
1.2
1.4
---
---
Vdc
Vdc
Vdc
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
.035
.900
.079
2.000
inches
mm
CLASSIFICATION OF H
FE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
www.mccsemi.com
Revision:
C
1 of 2
2013/01/01

MMS8550-H-TP-HF相似产品对比

MMS8550-H-TP-HF MMS8550-L-TP-HF
描述 Small Signal Bipolar Transistor, 0.5A I(C), PNP, Small Signal Bipolar Transistor, 0.5A I(C), PNP,
是否Rohs认证 符合 符合
厂商名称 Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.5 A 0.5 A
配置 Single Single
最小直流电流增益 (hFE) 200 120
最高工作温度 150 °C 150 °C
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP
最大功率耗散 (Abs) 0.3 W 0.3 W
表面贴装 YES YES
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
标称过渡频率 (fT) 150 MHz 150 MHz

 
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