BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(P
C
=150mW)
Epitaxial planar die construction.
Complementary to MMST3904.
Also available in lead free version.
Production specification
MMST3906
Pb
Lead-free
APPLICATIONS
General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No.
MMST3906
Marking
K5N
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Value
-40
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-40
-5
-200
V
V
mA
Collector Dissipation
Junction and Storage Temperature
150
-55~150
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=-10μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V,I
C
= -10mA,
f=100MHz
V
CB
=-5V,I
E
=0,f=1MHz
V
CB
=-5V,I
E
=0,f=1MHz
V
CE
=-5V,I
C
=-0.1mA,
f=1KHz,R
s
=1KΩ
V
CC
=-3V,V
BE
=-0.5V,
I
C
=-10mA,I
B1
=-1mA
Production specification
MMST3906
MIN
-40
-40
-5
-0.05
-0.05
60
80
100
60
30
TYP MAX
UNIT
V
V
V
μA
μA
DC current gain
h
FE
300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector input capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
iob
NF
t
d
t
r
t
s
t
f
-0.25
-0.4
-0.65
-0.85
-0.95
V
V
MHz
250
4.5
10
4
35
35
225
75
pF
pF
dB
nS
nS
nS
nS
V
CC
=-3V,I
C
=-10mA,
I
B1
=I
B2
=-1mA
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
2
BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
Production specification
MMST3906
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
3
BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
Production specification
MMST3906
SOT-323
SOT-323
Dim
A
B
C
D
E
G
H
J
K
Min
1.8
1.15
0.15
0.25
1.2
0.02
2.1
Max
2.2
1.35
0.35
0.40
1.4
0.1
2.3
1.0Typical
0.1Typical
All Dimensions in mm
PACKAGE INFORMATION
Device
MMST3906
Package
SOT-323
Shipping
3000/Tape&Reel
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
4