Single-Ended Multiplexer, 1 Func, 16 Channel, CMOS, CDIP28, CERDIP-28
| 参数名称 | 属性值 |
| 厂商名称 | Vishay(威世) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER |
| JESD-30 代码 | R-GDIP-T28 |
| 长度 | 36.83 mm |
| 负电源电压最大值（Vsup） | -20 V |
| 负电源电压最小值（Vsup） | -5 V |
| 标称负供电电压 (Vsup) | -15 V |
| 信道数量 | 16 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 标称断态隔离度 | 69 dB |
| 通态电阻匹配规范 | 2.5 Ω |
| 最大通态电阻 (Ron) | 100 Ω |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class Q |
| 座面最大高度 | 5.92 mm |
| 最大供电电压 (Vsup) | 20 V |
| 最小供电电压 (Vsup) | 5 V |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | NO |
| 最长断开时间 | 150 ns |
| 最长接通时间 | 200 ns |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| 5962-9562301QXX | 5962-9562301Q3X | 5962-9562302QXX | 5962-9562302Q3X | |
|---|---|---|---|---|
| 描述 | Single-Ended Multiplexer, 1 Func, 16 Channel, CMOS, CDIP28, CERDIP-28 | Single-Ended Multiplexer, 1 Func, 16 Channel, CQCC28, CERAMIC, LCC-28 | Differential Multiplexer, 1 Func, 8 Channel, CMOS, CDIP28, CERDIP-28 | Differential Multiplexer, 1 Func, 8 Channel, CQCC28, CERAMIC, LCC-28 |
| 零件包装代码 | DIP | QLCC | DIP | QLCC |
| 包装说明 | DIP, | QCCN, | DIP, | QCCN, |
| 针数 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Base Number Matches | 1 | 1 | 1 | 1 |
| 厂商名称 | Vishay(威世) | - | Vishay(威世) | Vishay(威世) |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER | - | DIFFERENTIAL MULTIPLEXER | DIFFERENTIAL MULTIPLEXER |
| JESD-30 代码 | R-GDIP-T28 | - | R-GDIP-T28 | S-CQCC-N28 |
| 标称负供电电压 (Vsup) | -15 V | - | -15 V | -15 V |
| 信道数量 | 16 | - | 8 | 8 |
| 功能数量 | 1 | - | 1 | 1 |
| 端子数量 | 28 | - | 28 | 28 |
| 标称断态隔离度 | 69 dB | - | 69 dB | 50 dB |
| 通态电阻匹配规范 | 2.5 Ω | - | 2.5 Ω | 15 Ω |
| 最大通态电阻 (Ron) | 100 Ω | - | 100 Ω | 90 Ω |
| 最高工作温度 | 125 °C | - | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | - | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | - | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | - | DIP | QCCN |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | SQUARE |
| 封装形式 | IN-LINE | - | IN-LINE | CHIP CARRIER |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class Q | - | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q |
| 标称供电电压 (Vsup) | 15 V | - | 15 V | 15 V |
| 表面贴装 | NO | - | NO | YES |
| 最长断开时间 | 150 ns | - | 150 ns | 150 ns |
| 最长接通时间 | 200 ns | - | 200 ns | 200 ns |
| 温度等级 | MILITARY | - | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | NO LEAD |
| 端子位置 | DUAL | - | DUAL | QUAD |
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