2N5088 / MMBT5088 / 2N5089 / MMBT5089
Discrete POWER & Signal
Technologies
2N5088
2N5089
MMBT5088
MMBT5089
C
E
C
B
TO-92
E
SOT-23
Mark: 1Q / 1R
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
2N5088
2N5089
2N5088
2N5089
Value
30
25
35
30
4.5
100
-55 to +150
Units
V
V
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
2N5088
2N5089
625
5.0
83.3
200
Max
*MMBT5088
*MMBT5089
350
2.8
357
Units
P
D
R
θJC
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©
1997 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
V
CB
= 20 V, I
E
= 0
V
CB
= 15 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
V
EB
= 4.5 V, I
C
= 0
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
30
25
35
30
50
50
50
100
V
V
V
V
nA
nA
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, V
CE
= 5.0 V
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
300
400
350
450
300
400
900
1200
0.5
0.8
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
fe
NF
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= 500
µA,V
CE
= 5.0 mA,
f = 20 MHz
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
V
BE
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 100
µA,
V
CE
= 5.0 V,
R
S
= 10 kΩ,
f = 10 Hz to 15.7 kHz
2N5088
2N5089
2N5088
2N5089
350
450
50
4.0
10
1400
1800
3.0
2.0
MHz
pF
pF
dB
dB
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
DC Typical Characteristics
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
400
350
300
250
200
150
100
50
0
0.01 0.03 0.1 0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
P 07
- 40 °C
25 °C
125 °C
Vce=5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
β
= 10
0.15
0.1
0.05
0.1
25 °C
- 40 °C
100
1
10
I
C
- COLLECTOR CURRENT (mA)
P0
100
V - COLLECTOR-EMITTER VOLTAGE (V)
BESAT
1
V - BASE-EMITTER ON VOLTAGE (V)
BEON
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
V
CE
= 5V
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
40
0.8
0.6
0.4
- 40 °C
25 °C
125 °C
- 40 °C
25 °C
125 °C
β
= 10
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
P0
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
10
V
CB
= 45V
1
0.1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE ( ºC)
P0
150
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics
Input / Output Capacitance
vs. Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (f
T
)
Normalized Collector Cutoff
Current vs. Ambient Temperature
Wideband Noise Figure
vs. Source Resistance
Noise Figure vs. Frequency
Contours of Constant
Narrow Band Noise Figure
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Maximum Power Dissipation
vs. Ambient Temperature
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