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JANTXV1N974DUR-1/TR

产品描述稳压二极管
产品类别半导体    分立半导体    二极管与整流器    稳压二极管   
文件大小147KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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JANTXV1N974DUR-1/TR概述

稳压二极管

JANTXV1N974DUR-1/TR规格参数

参数名称属性值
厂商名称Microsemi
产品种类稳压二极管
RoHSN
Vz - 齐纳电压36 V
安装风格SMD/SMT
封装 / 箱体DO-213AA-2
Pd-功率耗散0.5 W
电压容差1 %
电压温度系数0.093 %/C
齐纳电流11 mA
Zz - 齐纳阻抗70 Ohms
最小工作温度- 65 C
最大工作温度+ 175 C
配置Single
测试电流3.4 mA
封装Reel
直径2.29 mm
长度5.08 mm
If - 正向电流200 mA
Ir - 反向电流 0.5 uA
工厂包装数量100
Vf - 正向电压1.1 V

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• 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN
JAN
,
JANTX AND JANTXV
PER MIL-PRF-19500/117
• ZENER DIODES
• LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED
1N962BUR-1 thru 1N986BUR-1
and
CDLL957B thru CDLL986B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ TEC = +125°C
Power Derating: 10 mW / °C above TEC = +125°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
CDI
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ
(NOTE 2)
VOLTS
CDLL957B
CDLL958B
CDLL959B
CDLL960B
CDLL961B
CDLL962B
CDLL963B
CDLL964B
CDLL965B
CDLL966B
CDLL967B
CDLL968B
CDLL969B
CDLL970B
CDLL971B
CDLL972B
CDLL973B
CDLL974B
CDLL975B
CDLL976B
CDLL977B
CDLL978B
CDLL979B
CDLL980B
CDLL981B
CDLL982B
CDLL983B
CDLL984B
CDLL985B
CDLL986B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
mA
18.5
16.5
15.0
14.0
12.5
11.5
10.5
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.0
1.8
1.7
1.5
1.4
1.3
1.1
ZENER
TEST
CURRENT
l ZT
MAXIMUM ZENER IMPEDANCE
(NOTE 3)
ZZT @ l ZT
OHMS
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13
16
17
21
25
29
33
41
49
58
70
90
93
105
125
150
185
230
270
330
400
500
750
ZZK @ l ZK
OHMS
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
mA
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
mA
55
50
45
41
38
32
31
28
25
24
20
18
16
15
13
12
11
10
9.5
8.8
7.9
7.4
6.8
6.0
5.5
5.0
4.6
4.1
3.7
3.3
MAX. DC
ZENER
CURRENT
l ZM
MAX. REVERSE
LEAKAGE CURRENT
lR @ VR
µ
A
5.0
5.0
5.0
5.0
2.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
VOLTS
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11
12
14
15
17
18
21
23
25
27
30
33
36
39
43
47
52
56
62
69
76
84
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100
°
C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
JX): 35
°
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
Zener voltage tolerance on "B" suffix is + 5%. Suffix letter “A” denotes + 10%. No
Suffix denotes + 20%. "C" suffix denotes + 2%, and "D" suffix denotes + 1%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT.
NOTE 2
NOTE 3
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
103

 
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