1N5415US thru 1N5420US
VOIDLESS-HERMETICALLY SEALED SURFACE
MOUNT FAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category
1”
metallurgical bond. These devices are also available in axial-leaded packages for
thru-hole mounting. Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and ultrafast device types in
both through-hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
FEATURES
•
•
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N5415 thru 1N5420 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Working peak reverse voltage 50 to 600 volts.
JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
RoHS compliant versions available (commercial grade only).
“B” SQ-MELF
(D-5B) Package
Also available in:
“B” Package
(axial-leaded)
1N5415 – 1N5420
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
•
Fast recovery 3 amp 50 to 600 volt rectifiers.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
Forward Surge Current @ 8.3 ms half-sine
(3)
o
Average Rectified Forward Current
@ T
A
= +55 C
@ T
A
= +100
o
C
Working Peak Reverse Voltage
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
(5)
Maximum Reverse Recovery Time
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
Solder Temperature @ 10 s
See notes on next page.
Symbol
T
J
and T
STG
R
ӨJEC
I
FSM
(1, 2)
I
O
(2)
I
O
V
RWM
Value
-65 to +175
6.5
80
3
2
50
100
200
400
500
600
150
150
150
150
250
400
260
Unit
o
C
C/W
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
V
t
rr
ns
T
SP
o
C
T4-LDS-0231-1, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 1 of 5
1N5415US thru 1N5420US
MAXIMUM RATINGS
Notes:
1. Derate linearly at 22 mA/
o
C for 55
o
C < T
A
< 100
o
C.
o
o
o
2. Above T
A
= 100 C, derate linearly at 26.7 mA/ C to zero at T
A
= 175 C.
3. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175
o
C.
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: End caps are copper with tin/lead (Sn/Pb) finish. Note: Previous inventory had solid silver with tin/lead (Sn/Pb)
finish. RoHS compliant matte-tin is available for commercial grade only.
MARKING: Cathode band only.
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-481-B. Contact factory for quantities.
WEIGHT: 539 milligrams.
See
Package Dimensions
and recommended
Pad Layout
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N5415
US (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
Symbol
V
BR
V
RWM
I
O
V
F
I
R
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B).
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0231-1, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 2 of 5
1N5415US thru 1N5420US
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLTAGE
TYPE
V
BR
@ 50
µA
Volts
55
110
220
440
550
660
MIN.
Volts
0.6
0.6
0.6
0.6
0.6
0.6
MAX.
Volts
1.5
1.5
1.5
1.5
1.5
1.5
FORWARD
VOLTAGE
V
F
@ 9 A
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
25 C
µA
1.0
1.0
1.0
1.0
1.0
1.0
o
CAPACITANCE
C
V
R
@ 4 V
o
100 C
µA
20
20
20
20
20
20
pF
550
430
250
165
140
120
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
NOTE 1:
I
F
= 0.5 A, I
RM
= 1 A, I
R(REC)
= 0.250 A.
T4-LDS-0231-1, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 3 of 5
1N5415US thru 1N5420US
GRAPHS
I
F
– Current (µA)
% PIV
FIGURE 1
Typical Reverse Current vs. PIV
Z
ӨJX
( C/Watt)
o
Heating Time (sec)
FIGURE 2
Maximum Thermal Impedance
I
F
– Current (A)
V
F
– Voltage (V)
FIGURE 3
Typical Forward Current vs. Forward Voltage
T4-LDS-0231-1, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 4 of 5
1N5415US thru 1N5420US
PACKAGE DIMENSIONS
INCH
MIN
BL
BD
ECT
S
0.200
0.137
0.019
0.003
MAX
0.225
0.148
0.028
---
MILLIMETERS
MIN
5.08
3.48
0.48
0.08
MAX
5.72
3.76
0.71
---
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all orientations.
5. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
6. This package outline has also previously been identified as “D-5B”.
PAD LAYOUT
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94
Note:
If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
T4-LDS-0231-1, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 5 of 5
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
