Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
参数名称 | 属性值 |
厂商名称 | Infineon(英飞凌) |
零件包装代码 | TO-220AB |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 |
Reach Compliance Code | unknown |
Is Samacsys | N |
雪崩能效等级(Eas) | 170 mJ |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 800 V |
最大漏极电流 (ID) | 1.5 A |
最大漏源导通电阻 | 8 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 |
JESD-609代码 | e3 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 6 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | MATTE TIN |
端子形式 | GULL WING |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
BUZ78-E3045 | BUZ78-E3044 | BUZ78-E3046 | |
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描述 | Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
零件包装代码 | TO-220AB | TO-220AB | TO-220AB |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G3 | TO-220AB, 3 PIN |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
Is Samacsys | N | N | N |
雪崩能效等级(Eas) | 170 mJ | 170 mJ | 170 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 800 V | 800 V | 800 V |
最大漏极电流 (ID) | 1.5 A | 1.5 A | 1.5 A |
最大漏源导通电阻 | 8 Ω | 8 Ω | 8 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G3 | R-PSIP-T3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 6 A | 6 A | 6 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | NO |
端子形式 | GULL WING | GULL WING | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 |
JESD-609代码 | e3 | e3 | - |
端子面层 | MATTE TIN | MATTE TIN | - |
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