Datasheet> 器件分类 > 分立半导体> 晶体管> JANS2N2221AUB/TR

文档预览

JANS2N2221AUB/TR: 产品描述Small Signal Bipolar Transistor,; 产品类别分立半导体晶体管; 文件大小61KB，共3页; 制造商Microsemi; 官网地址https://www.microsemi.com

下载文档详细参数选型对比全文预览

JANS2N2221AUB/TR概述

Small Signal Bipolar Transistor,

JANS2N2221AUB/TR规格参数

参数名称	属性值
Objectid	7470131998
Reach Compliance Code	unknown
Samacsys Manufacturer	Microsemi Corporation
Samacsys Modified On	2021-01-02 08:49:00

文档预览

下载PDF文档

全文
预览

TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

Devices

2N2221A

2N2221AL

2N2221AUA

2N2221AUB

Qualified Level

JAN

JANTX

JANTXV

JANS

JANHC

2N2222A

2N2222AL

2N2222AUA

2N2222AUB

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation @ T

= +25

2N2221A, L; 2N2222A, L

(1)

2N2221AUA; 2N2222AUA

(2)

2N2221AUB; 2N2222AUB

(1)

Operating & Storage Junction Temperature Range

Symbol

CEO

CBO

EBO

stg

Symbol

All Types

6.0

800

0.5

0.65

0.50

-65 to +200

Max.

325

210

325

Unit

Vdc

mAdc

TO-18* (TO-206AA)

2N2221A, 2N2222A

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Ambient

2N2221A, L; 2N2222A, L

2N2221AUA; 2N2222AUA

2N2221AUB; 2N2222AUB

1) Derate linearly 3.08 mW/

C above T

> +37.5

2) Derate linearly 4.76 mW/

C above T

> +63.5

Unit

4 PIN*

2N2221AUA, 2N2222AUA

C/W

3 PIN*

2N2221AUB, 2N2222AUB

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Characteristics

Symbol

(BR)

CEO

CBO

Min.

Max.

Unit

Vdc

µAdc

ηAdc

µAdc

ηAdc

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

= 10 mAdc

Collector-Base Cutoff Current

= 75 Vdc

= 60 Vdc

Emitter-Base Cutoff Current

= 6.0 Vdc

= 4.0 Vdc

Collector-Base Cutoff Current

= 50 Vdc

EBO

CES

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JANS2N2221AUB/TR相似产品对比

	JANS2N2221AUB/TR	JANS2N2221AL/TR	JANS2N2221A/TR	JANS2N2222AUB/TR	JANS2N2221AUBC/TR	JANSR2N2222AUB/TR	JANSF2N2222A/TR	JANSR2N2222A/TR	JANS2N2222AL/TR
描述	Small Signal Bipolar Transistor,	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)
厂商名称	-	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
产品种类	-	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	-	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)	双极晶体管 - 双极结型晶体管(BJT)
RoHS	-	N	N	-	N	N	N	N	N
技术	-	Si	Si	-	Si	Si	Si	Si	Si
安装风格	-	Through Hole	Through Hole	-	SMD/SMT	SMD/SMT	Through Hole	Through Hole	Through Hole
封装 / 箱体	-	TO-206AA-3	TO-206AA-3	-	CLCC-3	LCC-3	TO-206AA-3	TO-206AA-3	TO-206AA-3
晶体管极性	-	NPN	NPN	-	NPN	NPN	NPN	NPN	NPN
配置	-	Single	Single	SINGLE	Single	Single	Single	Single	Single
集电极—发射极最大电压 VCEO	-	50 V	50 V	-	50 V	50 V	50 V	50 V	50 V
集电极—基极电压 VCBO	-	75 V	75 V	-	75 V	75 V	75 V	75 V	75 V
发射极 - 基极电压 VEBO	-	6 V	6 V	-	6 V	6 V	6 V	6 V	6 V
集电极—射极饱和电压	-	0.3 V	0.3 V	-	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
最大直流电集电极电流	-	800 mA	800 mA	-	800 mA	800 mA	800 mA	800 mA	800 mA
最小工作温度	-	- 65 C	- 65 C	-	- 65 C	- 65 C	- 65 C	- 65 C	- 65 C
最大工作温度	-	+ 200 C	+ 200 C	-	+ 200 C	+ 200 C	+ 200 C	+ 200 C	+ 200 C
直流电流增益 hFE 最大值	-	150 at 1 mA, 10 V	150 at 1 mA, 10 V	-	150 at 1 mA, 10 V	325 at 1 mA, 10 V	325 at 1 mA, 10 V	325 at 1 mA, 10 V	325 at 1 mA, 10 V
封装	-	Reel	Reel	-	Reel	-	Reel	Reel	Reel
直流集电极/Base Gain hfe Min	-	20 at 500 mA, 10 V	20 at 500 mA, 10 V	-	20 at 500 mA, 10 V	30 at 500 mA, 10 V	30 at 500 mA, 10 V	30 at 500 mA, 10 V	30 at 500 mA, 10 V
Pd-功率耗散	-	0.5 W	0.5 W	-	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
工厂包装数量	-	100	100	-	100	1	100	100	100

JANS2N2221AUB/TR

JANS2N2221AUB/TR概述

JANS2N2221AUB/TR规格参数

文档预览

JANS2N2221AUB/TR相似产品对比

推荐资源